Abstract: A thin film transistor array for a liquid crystal display device is produced by simultaneously forming gate electrodes and picture element electrodes; forming islands of a layered structure comprised of a gate insulating film, a thin semiconductor film and a light shielding film in a single masking step; and forming the gate, source and drain wiring metals in contact windows by the "lift-off" technique after using a resist film for opening the contact windows. Only three masking steps are required thereby enabling an increase in production yield and a lower production cost as compared to conventional techniques which typically require seven masking steps.