Abstract: Disclosed is a semiconductor integrated circuit device comprising a semiconductor chip including a plurality of elements constituting multi-functional circuits and a control signal generating circuit incorporated within the semiconductor chip. The control signal generating circuit includes a variable resistance element which irreversibly changes its resistivity when a voltage having a magnitude larger than a specific level, is applied. The variable resistance element is connected in series with a fixed resistor which is further connected in parallel to the output electrodes of a field effect transistor. A control signal is applied to the input terminal of the transistor when the resistance of the variable resistance element is intended to change. An output terminal connected to the connection of the serial connected elements indicates logical "1" or "0" depending on whether the variable resistance element is in the high resistivity state or low resistivity state.

Abstract: A semiconductor switching element comprised by a high resistivity polycrystalline silicon resistor whose resistance irreversibly decreases to a small value at a threshold voltage upon the voltage across the resistor reaching the threshold voltage. A semiconductor memory device is constituted by using the switching element as a memory cell and a semiconductor gate element for controlling the current flowing through the semiconductor switching element.