Abstract: There is provided an electrochemical sensor that electrochemically detects a specific substance in a test sample 50 by bringing a liquid test sample 50 into contact with sensor electrodes 20 arranged on a support 10, the electrochemical sensor including a holding structure 30 that constitutes a non-sealed finite space facing the sensor electrodes 20 and holds the test sample 50 that is brought into contact with the sensor electrodes 20 in the finite space.

Abstract: An engineering tool includes a device model editing unit and a conversion candidate providing unit. The editing unit edits first correspondence information, based on an instruction. The correspondence information indicates a correspondence between a first device-specific data type of first collection data to be collected from a first device and a first reference data type of first reference data interpretable by a first application. The conversion candidate providing unit learns a conversion rule, based on an editing result of the first correspondence information. The conversion rule is a rule of conversion from the first reference data type to the first device-specific data type. The conversion candidate providing unit estimates, using the conversion rule, conversion candidates for a second device-specific data type of second collection data to be collected from a second device, with respect to a second reference data type of second reference data interpretable by a second application.

Abstract: A run-flat radial tire having a tire cross-section height of 115 mm or greater including: a carcass spanning between a pair of bead portions; a vehicle mounting direction outer side side-reinforcing rubber layer that is provided to a tire side portion at a vehicle mounting direction outer side and that extends in a tire radial direction along an inner face of the carcass; and a vehicle mounting direction inner side side-reinforcing rubber layer that is provided to a tire side portion at a vehicle mounting direction inner side and that extends in the tire radial direction along an inner face of the carcass, a tire radial direction outer side end portion of the vehicle mounting direction inner side side-reinforcing rubber layer being closer to a tire equatorial plane than a tire radial direction outer side end portion of the vehicle mounting direction outer side side-reinforcing rubber layer.

Abstract: A light modulating device 103 includes: a selective diffraction device (10, 10?) which generates diffracted light beams of a plurality of orders by diffracting illumination light into one of a plurality of directions, the illumination light being linearly polarized light having a polarization plane oriented in a first polarization direction, and which causes a phase difference between the diffracted light beams of the plurality of orders; and a polarization plane rotating device 14 which rotates the polarization plane of the diffracted light beam of each order so as to be oriented in a direction perpendicular to a direction radiating from an optical axis.

Abstract: A run-flat radial tire having a tire cross-section height of 115 mm or greater including: a carcass spanning between a pair of bead portions; a vehicle mounting direction outer side side-reinforcing rubber layer that is provided to a tire side portion at a vehicle mounting direction outer side and that extends in a tire radial direction along an inner face of the carcass; and a vehicle mounting direction inner side side-reinforcing rubber layer that is provided to a tire side portion at a vehicle mounting direction inner side and that extends in the tire radial direction along an inner face of the carcass, a tire radial direction outer side end portion of the vehicle mounting direction inner side side-reinforcing rubber layer being closer to a tire equatorial plane than a tire radial direction outer side end portion of the vehicle mounting direction outer side side-reinforcing rubber layer.

Abstract: An aberration correction device (3) corrects wave front aberration arising in an optical system that includes an object lens (4) disposed in an optical path for light beams output by a coherent light source (1). The aberration correction device (3) has a symmetrical aberration correction element (3a) that corrects symmetrical aberrations, which are the wave front aberrations that are symmetrical with respect to the optical axis among the wave front aberrations generated in the optical path, and an asymmetrical aberration correction element (3b) that corrects asymmetrical aberrations, which are wave front aberrations that are asymmetrical with respect to the optical axis, generated in light beams incident obliquely on the object lens (4).

Abstract: A liquid crystal optical device includes multiple liquid crystal elements arranged along the optical axis. Each liquid crystal element includes two transparent electrodes that are disposed so as to face each other with a liquid crystal layer disposed therebetween. At least one of the two transparent electrodes includes multiple partial electrodes. For each of a predetermined number of levels obtained by dividing, by the predetermined number, difference between a maximum value and a minimum value of a phase modulation amount provided to a luminous flux passing through the liquid crystal layer, at least one of the multiple partial electrodes is disposed on a part of the liquid crystal layer, the part providing the luminous flux with a phase modulation amount corresponding to the level. A position of the boundary between any two adjacent partial electrodes with respect to the luminous flux, is different for each liquid crystal element.

Abstract: A phase modulation device corrects wave front aberrations generated by an optical system including an objective lens disposed on an optical path of a light flux. The phase modulation device includes a phase modulation element which includes a plurality of electrodes, and modulates the phase of the light flux in accordance with a voltage applied to each electrode, and a control circuit which controls the voltage to be applied to each electrode. The control circuit controls the voltage to be applied to each electrode in such a manner that the light flux is imparted with a phase modulation amount in accordance with a phase modulation profile having a polarity opposite to the polarity of a phase distribution to be determined according to a relational equation representing a relationship between a numerical aperture of the objective lens and a ratio between third-order spherical aberration and fifth-order spherical aberration.

Abstract: A polarization conversion element includes a phase reversal element and a polarization plane rotation element including a liquid crystal layer. The liquid crystal layer has a plurality of regions disposed along circumferential direction with the intersection point of the polarization plane rotation element and the optical axis as the center with alignment directions different from each other. When electric voltage in accordance with the wavelength of linear polarization incident on the polarization plane rotation element is applied, each region rotates the polarization plane of the polarization component transmitted by each region, and thereby converts linear polarization to radial polarization. The phase reversal element reverses, among the first and the second annular portions alternately disposed along the radial direction with the optical axis as the center, the phase of light incident on the first annular portion relative to the phase of light incident on the second annular portion.

Abstract: A phase modulation device corrects wave front aberrations generated by an optical system including an objective lens disposed on an optical path of a light flux. The phase modulation device includes a phase modulation element which includes a plurality of electrodes, and modulates the phase of the light flux in accordance with a voltage applied to each electrode, and a control circuit which controls the voltage to be applied to each electrode. The control circuit controls the voltage to be applied to each electrode in such a manner that the light flux is imparted with a phase modulation amount in accordance with a phase modulation profile having a polarity opposite to the polarity of a phase distribution to be determined according to a relational equation representing a relationship between a numerical aperture of the objective lens and a ratio between third-order spherical aberration and fifth-order spherical aberration.

Abstract: A light modulating device 103 includes: a selective diffraction device (10, 10?) which generates diffracted light beams of a plurality of orders by diffracting illumination light into one of a plurality of directions, the illumination light being linearly polarized light having a polarization plane oriented in a first polarization direction, and which causes a phase difference between the diffracted light beams of the plurality of orders; and a polarization plane rotating device 14 which rotates the polarization plane of the diffracted light beam of each order so as to be oriented in a direction perpendicular to a direction radiating from an optical axis.

Abstract: A light modulator element includes a liquid crystal element which has a liquid crystal layer containing liquid crystal molecules aligned along a first direction, and two transparent electrodes disposed in opposition to each other with the liquid crystal layer sandwiched therebetween, and which controls the phase of linear polarization light and passing through said liquid crystal layer by applying an electric voltage between said two transparent electrodes; a polarizer plate which is disposed between a light source and said liquid crystal element and which has the transmission axis along the first direction or along a direction orthogonal to said first direction; and a rotation mechanism which supports the liquid crystal element and the polarizer plate and which rotates the liquid crystal element and the polarizer plate integrally in one unit with the optical axis of the liquid crystal element as the rotation axis.

Abstract: A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.

Abstract: An aberration correction device (3) corrects wave front aberration arising in an optical system that includes an object lens (4) disposed in an optical path for light beams output by a coherent light source (1). The aberration correction device (3) has a symmetrical aberration correction element (3a) that corrects symmetrical aberrations, which are the wave front aberrations that are symmetrical with respect to the optical axis among the wave front aberrations generated in the optical path, and an asymmetrical aberration correction element (3b) that corrects asymmetrical aberrations, which are wave front aberrations that are asymmetrical with respect to the optical axis, generated in light beams incident obliquely on the object lens (4).

Abstract: Provided is a semiconductor wafer including a base wafer, a first insulating layer, and a semiconductor layer. Here, the base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer, the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride, the semiconductor layer includes a first crystal layer and a second crystal layer, the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and the electron affinity Ea1 of the first crystal layer is larger than the electron affinity Ea2 of the second crystal layer.

Abstract: Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0<x1?1, 0?y1?1), the second semiconductor crystal layer is made of Inx2Ga1-x2Asy2P1-y2 (0?x2?1, 0?y2?1, y2?y1), and the electron affinity Ea1 of the first semiconductor crystal layer is lower than the electron affinity Ea2 of the second semiconductor crystal layer.

Abstract: Provided is a semiconductor device including a first source and a first drain of a P-channel-type MISFET formed on a Ge wafer, which are made of a compound having a Ge atom and a nickel atom, a compound having a Ge atom and a cobalt atom, or a compound having a Ge atom, a nickel atom, and a cobalt atom, and a second source and a second drain of an N-channel-type MISFET formed on the Group III-V compound semiconductor, which are made of a compound having a Group III atom, a Group V atom, and a nickel atom, a compound having a Group III atom, a Group V atom, and a cobalt atom, or a compound having a Group III atom, a Group V atom, a nickel atom, and a cobalt atom.

Abstract: There is provided a semiconductor device including: a first source and a first drain of a first-channel-type MISFET formed on a first semiconductor crystal layer, which are made of a compound having an atom constituting the first semiconductor crystal layer and a nickel atom, a compound having an atom constituting the first semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the first semiconductor crystal layer, a nickel atom, and a cobalt atom; and a second source and a second drain of a second-channel-type MISFET formed on a second semiconductor crystal layer, which are made of a compound having an atom constituting the second semiconductor crystal layer and a nickel atom, a compound having an atom constituting the second semiconductor crystal layer and a cobalt atom, or a compound having an atom constituting the second semiconductor crystal layer, a nickel atom, and a cobalt atom.

Abstract: A light modulator element includes a liquid crystal element which has a liquid crystal layer containing liquid crystal molecules aligned along a first direction, and two transparent electrodes disposed in opposition to each other with the liquid crystal layer sandwiched therebetween, and which controls the phase of linear polarization light and passing through said liquid crystal layer by applying an electric voltage between said two transparent electrodes; a polarizer plate which is disposed between a light source and said liquid crystal element and which has the transmission axis along the first direction or along a direction orthogonal to said first direction; and a rotation mechanism which supports the liquid crystal element and the polarizer plate and which rotates the liquid crystal element and the polarizer plate integrally in one unit with the optical axis of the liquid crystal element as the rotation axis.

Abstract: Provided is a semiconductor wafer including a base wafer, a first insulating layer, and a semiconductor layer. Here, the base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer, the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride, the semiconductor layer includes a first crystal layer and a second crystal layer, the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and the electron affinity Ea1 of the first crystal layer is larger than the electron affinity Ea2 of the second crystal layer.