Abstract: A salt which has a group represented by formula (a): wherein Xa and Xb each independently represent an oxygen atom or a sulfur group; X1 represents a C1-C12 divalent saturated hydrocarbon group which has a hydroxy group; and * represents a binding site.

Abstract: A singing voice synthesis data editing method includes adding, to singing voice synthesis data, a piece of virtual note data placed immediately before a piece of note data having no contiguous preceding piece of note data, the singing voice synthesis data including: multiple pieces of note data for specifying a duration and a pitch at which each note that is in a time series, representative of a melody to be sung, is voiced; multiple pieces of lyric data associated with at least one of the multiple pieces of note data; and a sequence of sound control data that directs sound control over a singing voice synthesized from the multiple pieces of lyric data, and obtaining the sound control data that directs sound control over the singing voice synthesized from the multiple pieces of lyric data, and that is associated with the piece of virtual note data.

Abstract: A method of forming a NAND flash memory includes etching between word lines to expose isolation material in shallow trench isolation (STI) trenches while active areas between word lines remain covered, then forming protective sleeves at locations over exposed isolation material. Subsequently, with the protective sleeves in place, isotropic etching of isolation material forms an air gap extending continuously between the protective sleeves along an individual STI trench.

Abstract: A method of forming a NAND flash memory includes etching between word lines to expose isolation material in shallow trench isolation (STI) trenches while active areas between word lines remain covered, then forming protective sleeves at locations over exposed isolation material. Subsequently, with the protective sleeves in place, isotropic etching of isolation material forms an air gap extending continuously between the protective sleeves along an individual STI trench.

Abstract: An information processing apparatus includes an obtainment unit configured to obtain information indicating a proximity state of an object and a predetermined operation surface, a setting unit configured to set a condition regarding the proximity state for determining whether the object is released from the operation surface based on a moving speed of the object in a period during which the object is regarded as touching the operation surface for input by the information obtained by the obtainment unit, and a determination unit configured to determine that the object is released from the operation surface in response to that the information obtained by the obtainment unit satisfies the condition set by the setting unit.

Abstract: A method for controlling an information processing apparatus configured to perform processing according to a type of an input operation, includes determining that the same type of operation as an operation input immediately before is likely to be repeated, based on input information of interest and information about the operation input immediately before, identifying by an identification unit an input operation based on the information of interest according to that the information of interest satisfies a predetermined condition set in advance, and setting, if the determination unit has determined that a same type of operation as the operation input immediately before is likely to be repeated, a condition for the identification unit to identify the operation input based on the information of interest as the same type of operation as the operation input immediately before so that the condition is easier to be satisfied than the predetermined condition.

Abstract: To provide a photo-curable composition for imprints which can ensure high ratio of mold filling and low defect density during mold releasing, and can provide a resist material with high etching durability. A photo-curable composition for imprints comprising a monofunctional monomer, a polyfunctional monomer and a photo-polymerization initiator, having a viscosity at 25° C. of 15 mPa·s or smaller, an Ohnishi parameter of 3.0 or smaller, and a crosslink density calculated by (Formula 1) of 0.6 mmol/cm3 or larger; Crosslink density={?(Ratio of mixing of polyfunctional monomer (parts by mass)*Number of functional groups of polyfunctional monomer/Molecular weight of polyfunctional monomer)}/Specific gravity.

Abstract: A salt represented by formula (I): wherein R1 and R2 independently in each occurrence represent a hydrogen atom, a hydroxy group or a C1-C12 hydrocarbon group where a methylene group can be replaced by an oxygen atom or a carbonyl group; Ar1 and Ar2 each independently represent a C6-C36 aromatic hydrocarbon group which can have a substituent or a C6-C36 heteroaromatic hydrocarbon group which can have a substituent; A? and A?? each independently represent an organic anion; and “m” and “n” independently each represent an integer of 1 to 2.

Abstract: A photoresist composition includes a polymer that includes a first structural unit shown by a formula (1), and an acid generator. R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. R2 represents a divalent hydrocarbon group having 1 to 10 carbon atoms. A represents —COO—*, —OCO—*, —O—, —S—, or —NH—, wherein “*” indicates a site bonded to R3. R3 represents a single bond or a divalent hydrocarbon group having 1 to 10 carbon atoms. The polymer preferably further includes a second structural unit that includes an acid-labile group.

Abstract: Provided is temporary bonding laminates for used in a manufacture of semiconductor devices, by which a member to be processed (a semiconductor wafer or the like) can be temporarily supported securely and readily during a mechanical or chemical process of the member to be processed and then the processed member can be readily released from the temporary support without damaging the processed member even after a high temperature process, and processes for manufacturing semiconductor devices. The temporary bonding laminate includes (A) a release layer and (B) an adhesive layer, wherein the release layer (A) comprises (a1) a first release layer having a softening point of 200° C. or more and adjoining the adhesive layer (B), and (a2) a second release layer adjoining the first release layer (a1); the second release layer (a2) contains a resin; and the resin after curing has a capable of being dissolved at 5% by mass or more, at 25° C., in at least one kind of solvents selected from hexane and the like.

Abstract: A radiation-sensitive resin composition for forming a resist film includes a polymer including a first structural unit represented by a formula (1) and a second structural unit represented by a formula (2). The first structural unit and the second structural unit are included in an identical polymer molecule or different polymer molecules. R1 represents a hydrogen atom or a methyl group. Q represents a divalent linking group having 1 to 4 carbon atoms. X represents a monovalent lactone group. A part or all of hydrogen atoms included in the monovalent lactone group represented by X are not substituted or substituted. R2 represents a hydrogen atom or a methyl group. Y represents a monovalent lactone group. A part or all of hydrogen atoms included in the monovalent lactone group represented by Y are not substituted or substituted.

Abstract: There is provided a resin composition for use in formation of a protective film to protect a substrate or a film formed on the substrate, from a developer containing an organic solvent to be used for development in pattern formation, and which contains two or more kinds of resins in which their main chain structures having a hydroxyl group are different, and contains water, a pattern forming method using the resin composition, and layered products comprising a substrate, an organic semiconductor film on the substrate, and a protective film comprising two or more kinds of resins in which their main chain structures having a hydroxyl group are different, on the organic semiconductor film.

Abstract: A salt which has a group represented by formula (a): wherein Xa and Xb each independently represent an oxygen atom or a sulfur group; X1 represents a C1-C12 divalent saturated hydrocarbon group which has a hydroxy group; and * represents a binding site.

Abstract: A method for cleansing a mold of the present invention suppresses generation of damage is a method for cleansing a nanoimprinting mold, in which a mesa type mold is immersed in cleansing fluid and ultrasonic cleansing is performed in a state in which a mold release layer containing a fluorine compound is provided on a patterned region of the mesa type mold.

Abstract: A resin comprising: a structural unit represented by formula (I), and a structural unit having an acid-labile group.

Abstract: A resist pattern-forming method includes providing a resist film having a surface free energy of 30 to 40 mN/m on a substrate using a radiation-sensitive resin composition. The resist film is exposed by applying radiation via a mask. The exposed resist film is developed. It is preferable that the exposing of the resist film includes exposing the resist film via an immersion liquid that is provided over the resist film.

Abstract: A salt represented by formula (I): wherein R1 and R2 independently in each occurrence represent a hydrogen atom, a hydroxy group or a C1-C12 hydrocarbon group where a methylene group can be replaced by an oxygen atom or a carbonyl group; Ar1 and Ar2 each independently represent a C6-C36 aromatic hydrocarbon group which can have a substituent or a C6-C36 heteroaromatic hydrocarbon group which can have a substituent; A? and A?? each independently represent an organic anion; and “m” and “n” independently each represent an integer of 1 to 2.

Abstract: A method for controlling an information processing apparatus configured to perform processing according to a type of an input operation, includes determining that the same type of operation as an operation input immediately before is likely to be repeated, based on input information of interest and information about the operation input immediately before, identifying by an identification unit an input operation based on the information of interest according to that the information of interest satisfies a predetermined condition set in advance, and setting, if the determination unit has determined that a same type of operation as the operation input immediately before is likely to be repeated, a condition for the identification unit to identify the operation input based on the information of interest as the same type of operation as the operation input immediately before so that the condition is easier to be satisfied than the predetermined condition.

Abstract: To provide a photo-curable composition for imprints which can ensure high ratio of mold filling and low defect density during mold releasing, and can provide a resist material with high etching durability. A photo-curable composition for imprints comprising a monofunctional monomer, a polyfunctional monomer and a photo-polymerization initiator, having a viscosity at 25° C. of 15 mPa·s or smaller, an Ohnishi parameter of 3.0 or smaller, and a crosslink density calculated by (Formula 1) of 0.6 mmol/cm3 or larger; Crosslink density={?(Ratio of mixing of polyfunctional monomer (parts by mass)*Number of functional groups of polyfunctional monomer/Molecular weight of polyfunctional monomer)}/Specific gravity.

Abstract: A photoresist composition includes a polymer that includes a structural unit shown by the following formula (1), and a photoacid generator. R1 in the formula (1) represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, Z represents a group that forms a divalent alicyclic group having 3 to 20 carbon atoms together with a carbon atom bonded to X, X represents an alkanediyl group having 1 to 6 carbon atoms, Y represents a hydrogen atom or —CR2R3(OR4), and R2 to R4 independently represent a hydrogen atom or a monovalent hydrocarbon group, provided that R3 and R4 optionally bond to each other to form a cyclic ether structure together with a carbon atom bonded to R3 and an oxygen atom bonded to R4.