Abstract: A CCD portion 3 is formed on a front surface side of a semiconductor substrate 1. A region of a back surface side of semiconductor substrate 1 that corresponds to CCD portion 3 is thinned while leaving peripheral regions 1a of the region, and an accumulation layer 5 is formed on the back surface side of semiconductor substrate 1. An electrical wiring 7, which is electrically connected to CCD portion 3, and an electrode pad 9, which is electrically connected to electrical wiring 7, are then formed on a region 1b of the front surface side of semiconductor substrate 1 that corresponds to a peripheral region 1a, and a supporting substrate 11 is adhered onto the front surface side of semiconductor substrate 1 so as to cover CCD portion 3 while leaving electrode pad 9 exposed. Semiconductor substrate 1 and supporting substrate 11 are then cut at a thinned portion of semiconductor substrate 1 so as to leave peripheral region 1a corresponding to region 1b at which electrical wiring 7 and electrode pad 9 are formed.

Abstract: With this semiconductor device, the distortion and cracking of a thinned portion of a semiconductor substrate are prevented to enable high precision focusing with respect to a photodetecting unit and uniformity and stability of high sensitivity of the photodetecting unit to be maintained. A semiconductor device 1 has a semiconductor substrate 10, a wiring substrate 20, conductive bumps 30, and a resin 32. A CCD 12 and a thinned portion 14 are formed on semiconductor substrate 10. Electrodes 16 of semiconductor substrate 10 are connected via conductive bumps 30 to electrodes 22 of wiring substrate 20. Wiring substrate 20 is subject to a wettability processing by which a region 26a that surrounds a region opposing thinned portion 14 and regions 26b that extend to the outer side from region 26a are lowered in the wettability with respect to the resin.

Abstract: With this semiconductor device, the distortion and cracking of a thinned portion of a semiconductor substrate are prevented to enable high precision focusing with respect to a photodetecting unit and uniformity and stability of high sensitivity of the photodetecting unit to be maintained. A semiconductor device 1 has a semiconductor substrate 10, a wiring substrate 20, conductive bumps 30, and a resin 32. A CCD 12 and a thinned portion 14 are formed on semiconductor substrate 10. Electrodes 16 of semiconductor substrate 10 are connected via conductive bumps 30 to electrodes 22 of wiring substrate 20. Insulating resin 32 fills a gap between outer edge 15 of thinned portion 14 and wiring substrate 20 to reinforce the bonding strengths of conductive bumps 30. This resin 32 is a resin sheet that has been formed in advance so as to surround a periphery of a gap between thinned portion 14 and wiring substrate 20 except for portions of the periphery.

Abstract: With this semiconductor device, the distortion and cracking of a thinned portion of a semiconductor substrate are prevented to enable high precision focusing with respect to a photodetecting unit and uniformity and stability of high sensitivity of the photodetecting unit to be maintained. A semiconductor device 1 has a semiconductor substrate 10, a wiring substrate 20, conductive bumps 30, and a resin 32. A CCD 12 and a thinned portion 14 are formed on semiconductor substrate 10. Electrodes 16 of semiconductor substrate 10 are connected via conductive bumps 30 to electrodes 22 of wiring substrate 20. Wiring substrate 20 has formed therein a groove portion 26a that surrounds a region opposing thinned portion 14 and groove portions 26b that extend to an exposed surface of wiring substrate 20 from groove portion 26a. Insulating resin 32 fills a gap between outer edge 15 of thinned portion 14 and wiring substrate 20 to reinforce the bonding strengths of conductive bumps 30.

Abstract: A solid-state imaging apparatuses IS1 comprises a package P1, a CCD chip 11, chip resistor arrays 21, etc. In package P1, a mounting portion 2, for mounting CCD chip 11 and chip resistor arrays 21, is disposed so as to protrude into a hollow portion 1. Mounting portion 2 has a first planar portion 3 and second planar portions 4, and first planar portion 3and second planar portions 4 are formed to be stepped with respect to each other. CCD chip 11 is mounted and fixed on first planar portion 3via a spacer 13. Chip resistor arrays 21 are mounted and fixed on second planar portions 4. Using the step difference between first planar portion 3 and second planar portions 4, CCD chip 11 and chip resistor arrays 21 are positioned proximally.

Abstract: A semiconductor energy detector includes a semiconductor substrate comprised of a semiconductor of a first conductivity type, into which an energy ray of a predetermined wavelength range is incident from an incident surface thereof. A semiconductor energy detector includes a plurality of diffusion regions of a second conductivity type comprised of a semiconductor of a second conductivity type and a diffusion region of the first conductivity type comprised of a semiconductor of the first conductivity type higher in impurity concentration than the semiconductor substrate. The diffusion regions of a second conductivity type and the diffusion region of the first conductivity type are provided on a surface opposite to the incident surface of said semiconductor substrate. Each first conductivity type semiconductor substrate side of pn junctions, formed at the area of interface between the semiconductor substrate and each of the diffusion regions of the second conductivity type, is commonly connected.

Abstract: The present invention relates to an image pickup device, etc., having a structure such that electrostatic discharge is unlikely to occur when an FOP and a CCD reading part are joined. This image pickup device comprises a semiconductor substrate, provided with the CCD reading part on a front surface that opposes a back surface, which serves as a light-incident surface, a package having a cavity in which the semiconductor substrate is fixed, a cover covering an upper opening of the cavity, an FOP joined to the semiconductor substrate, and electrical wirings. The cover has a guiding opening for inserting the FOP into the cavity, and the semiconductor substrate is thinned at a portion corresponding to a region at which the CCD reading part is disposed.

Abstract: This invention relates to a photodetection device, etc., equipped with a structure that efficiently cools a CCD reading part and can realize a downsizing of the entire device. The photodetection device comprises: a semiconductor substrate having a back surface which serves as a light-incident surface, and a front surface which opposes the back surface and is provided with a CCD reading part that detects light propagating from the back surface; a cooling device cooling the CCD reading part; and a package having a cavity that houses the semiconductor substrate and cooling device. The semiconductor substrate is fixed to a cavity bottom part of the package via the cooling device, and at the back surface thereof, a portion corresponding to a region at which the CCD reading part is disposed, is made thin. The cooling device has a cooling surface contacting the front surface of the semiconductor substrate while covering the region at which the CCD reading part is disposed.

Abstract: A CCD unit is provided on the surface side of a thin shape section that is formed on a first substrate. In the CCD unit, first cells are provided and disposed in the form of an array in a direction in which the thin shape section extends. An InGaAs photodiode unit is provided at a second substrate in the InGaAs photodiode unit, second cells are provided and disposed in an array in the same direction as the first cells while having equal pitches to the first cells. The first substrate and second substrate are stacked over each other in such a manner that the surface of the first substrate and a second incidence plane of the second substrate oppose each other to ensure that part of a first photoelectric conversion region of the CCD unit correspondingly overlap part of a second photoelectric conversion region of the InGaAs photodiode unit when seen in plan view.

Abstract: A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the front side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped auxiliary wirings for performing auxiliary application/supplement and additional wirings for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.

Abstract: A semiconductor photodetecting apparatus 1 comprises a base 2 and a CCD chip 4. The CCD chip 4 is secured to the base 2 when a resin 8 is supplied and cured. The base 2 is formed with a gas supply path 15 and a gas exhaust path 16. Each of the gas supply path 15 and gas exhaust path 16 has one end opening to the upper face 2d of the base 2, and the other end opening to an end face of a mounting portion 2a. A gas storage section 19 and a gas supply pump 20 are connected to the gas supply path 15, whereby the gas supply pump 20 supplies N2 gas stored in the gas storage section 19 to a space within the base 2 by way of the gas supply path 15. The N2 gas supplied to the space is discharged from the gas exhaust path 16 after being refluxed through the space.

Abstract: In an electron tube 1, a space S between a periphery part 15b of a semiconductor device 15 and a stem 11 is filled with an insulating resin 20. The insulating resin 20 functions as a reinforcing member while the electron tube 1 is assembled under high-temperature condition, thereby preventing a bump 16 from coming off a bump connection portion 19. Since the space S is only partly closed by the resin 20, the space between the semiconductor device 15 and the stem 11 is ensured a ventilability. That is, no air reservoir is formed between an electron incidence part 15a at the center of the semiconductor device 15 and the surface C of the stem 11, whereby air expanding at high temperature does not damage the electron incidence part 15a of the back-illuminated semiconductor device 15.

Abstract: An electron tube 10 mainly includes a sleeve 12, an input plate 14 having a photocathode surface 18, a stem 16 and a CCD 20. A vacuum is provided in an interior of the electron tube 10. The CCD 20 is fixed onto the stem such that a rear surface B faces the photocathode surface 18. In the CCD 20, on a single conductive type semiconductor substrate 64, a buried layer 66, a barrier region 68, a SiO2 layer 70, a storage electrode layer 72, a transmission electrode layer 74, and a barrier electrode layer 76 are formed at their predetermined positions. A PSG film 78 is formed at an entire front surface A over these layers to flatten the surface of the CCD 20. Further, SiN film 106 mainly composed of SiN is formed above the PSG film over the entire front surface A.

Abstract: A substrate beam 1b is formed so as to divide a membrane for enabling detection of an energy ray upon back illumination, there by suppressing distortion of the membrane and preventing defocus upon detection due to the distortion, or the like. The distance is set sufficiently short from each region of the membrane to a substrate frame or to the substrate beam, thereby decreasing substrate resistance and enabling high-speed reading operation.

Abstract: A photodiode array 1 includes P+ diffusion regions 4 and 5, N+ channel stop layers 6 and 7, an N+ diffusion region 8 and the like. The P+ diffusion regions 4 and 5 and the N+ channel stop layers 6 and 7 are provided on a surface side opposite to an incident surface of a semiconductor substrate 3. The N+ channel stop layer 6 is provided between the P+ diffusion regions (the P+ diffusion regions 4 and 5; the P+ diffusion regions 4 and 4) adjacent to each other, and exhibits a form of lattice so as to separate the P+ diffusion regions (the P+ diffusion regions 4 and 5; the P+ diffusion regions 4 and 4). The N+ channel stop layer 7 is provided in the form of frame on the outside of an array of the P+ diffusion region 5 continuously with the N+ channel stop layer 6. The N+ channel stop layer 7 is set wider than the N+ channel stop layer 6.

Abstract: A semiconductor photodetecting apparatus 1 comprises a base 2 and a CCD chip 4. The CCD chip 4 is secured to the base 2 when a resin 8 is supplied and cured. The base 2 is formed with a gas supply path 15 and a gas exhaust path 16. Each of the gas supply path 15 and gas exhaust path 16 has one end opening to the upper face 2d of the base 2, and the other end opening to an end face of a mounting portion 2a. A gas storage section 19 and a gas supply pump 20 are connected to the gas supply path 15, whereby the gas supply pump 20 supplies N2 gas stored in the gas storage section 19 to a space within the base 2 by way of the gas supply path 15. The N2 gas supplied to the space is discharged from the gas exhaust path 16 after being refluxed through the space.

Abstract: A CCD unit is provided on the surface 11b side of a thin shape section that is formed on a first substrate. In the CCD unit, first cells are provided and disposed in the form of an array in a direction in which the thin shape section extends. An InGaAs photodiode unit is provided at a second substrate 21: in the InGaAs photodiode unit, second cells are provided and disposed in an array in the same direction as the first cells while having equal pitches to the first cells. The first substrate and second substrate are stacked over each other in such a manner that the surface of the first substrate and a second incidence plane of the second substrate oppose each other to ensure that part of a first photoelectric conversion region of the CCD unit correspondingly overlap part of a second photoelectric conversion region of the InGaAs photodiode unit 22 when seen in plan view.

Abstract: A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the front side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped auxiliary wirings for performing auxiliary application/supplement and additional wirings for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.

Abstract: A substrate beam 1b is formed so as to divide a membrane f or enabling detection of an energy ray upon back illumination, thereby suppressing distortion of the membrane and preventing defocus upon detection due to the distortion, or the like. The distance is set sufficiently short from each region of the membrane to a substrate frame or to the substrate beam, thereby decreasing substrate resistance and enabling high-speed reading operation.

Abstract: An n-type buried channel, a silicon oxide film, a poly-Si transfer electrode, a PSG film as an insulating interlayer, an aluminum interconnection, and a silicon nitride film are stacked on one surface of a p-type silicon substrate to form a CCD. The other surface is protected by a silicon oxide film, and a p+-type accumulation layer is formed on the silicon oxide film, thereby forming a back-illuminated CCD on which light, electromagnetic wave, charged particles, or the like is incident through the other surface. A glass substrate is anodically bonded on the CCD via an insulating polyimide film, and a conductive aluminum film. Therefore, the mechanical strength of the device is kept high, and the sensitivity can be increased by thinning the silicon substrate.