Abstract: A carbon catalyst which has high catalytic activity and can achieve high catalyst performance is provided. The carbon catalyst comprises nitrogen. The energy peak area ratio of the first nitrogen atom whose electron in the 1s orbital has a binding energy of 398.5±1.0 eV to the second nitrogen atom whose electron in the 1s orbital has a binding energy of 401±1.0 eV (i.e., the value of (the first nitrogen atom)/(the second nitrogen atom)) of the nitrogen introduced into the catalyst is 1.2 or less.

Abstract: A carbon catalyst which has high catalytic activity and can achieve high catalyst performance is provided. The carbon catalyst comprises nitrogen. The energy peak area ratio of the first nitrogen atom whose electron in the 1s orbital has a binding energy of 398.5±1.0 eV to the second nitrogen atom whose electron in the 1s orbital has a binding energy of 401±1.0 eV (i.e., the value of (the first nitrogen atom)/(the second nitrogen atom)) of the nitrogen introduced into the catalyst is 1.2 or less.

Abstract: A magneto-resistance effect device (1) includes a semiconductor region (2) having a surface provided with a plurality of isolated metal micro-particles (3) of not more than 100 ?m disposed at intervals of not more than 1 ?m, a semiconductor or half-metal cap layer (4) for covering the semiconductor region and a plurality of electrodes (5) disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device (1) has various excellent characteristics.

Abstract: The present invention is made to provide a carbon catalyst which has high catalytic activity and can achieve high catalyst performance. A carbon catalyst has nitrogen introduced therein. The value of energy peak area ratio of a first nitrogen atom whose electron in the is orbital has a binding energy of 398.5±1.0 eV to a second nitrogen atom whose electron in the is orbital has a binding energy of 401±1.0 eV (i.e., the value of (the first nitrogen atom)/(the second nitrogen atom)) of the introduced nitrogen is 1.2 or less.

Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Abstract: The present invention provides a mesoscopic magnetic body comprising a tabular ferromagnetic body whose planar shape has an axis of symmetry, but which is not symmetric in the direction perpendicular to the axis of symmetry, and wherein the magnetic body shows a circular single domain structure upon removal of the external parallel magnetic field. MRAMs which apply such a mesoscopic magnet and production methods thereof are also provided. As a result, it is possible to control the magnetization direction in nano-scale mesoscopic magnets as well as eliminate the limitation on the number of times in rewriting and writing.

Abstract: Disclosed is a method for the preparation of a nitride semiconductor device having a nitride semiconductor layer composed of InN on which a high quality layer of a semiconductor of a nitride of a group III element typified by InN or GaN is grown as traversing dislocation or an interfacing layer is suppressed from being generated. The method includes a vapor depositing step of vapor depositing InN on the (111) plane of a yttria stabilized zirconia substrate (12) for forming the nitride semiconductor layer oriented with c-axis of an InN crystal of the hexagonal system substantially vertical with respect to the (111) plane of the substrate (12).

Abstract: A magneto-resistance effect device (1) includes a semiconductor region (2) having a surface provided with a plurality of isolated metal micro-particles (3) of not more than 100 ?m disposed at intervals of not more than 1 ?m, a semiconductor or half-metal cap layer (4) for covering the semiconductor region and a plurality of electrodes (5) disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device (1) has various excellent characteristics.

Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.

Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.

Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.

Abstract: Evaluating electrical properties of a semiconductor device by measuring and analyzing a junction capacitance of a semiconductor provided in the semiconductor device and a transient change of the junction capacitance while applying an X-ray beam to the semiconductor device intermittently, and evaluating a structure and electron states of the semiconductor by measuring and analyzing an energy spectrum of an X-ray beam absorbed into an element present in the semiconductor while applying an X-ray beam to the semiconductor device continuously.

Abstract: Evaluating electrical properties of a semiconductor device by measuring and analyzing a junction capacitance of a semiconductor provided in the semiconductor device and a transient change of the junction capacitance while applying an X-ray beam to the semiconductor device intermittently, and evaluating a structure and electron states of the semiconductor by measuring and analyzing an energy spectrum of an X-ray beam absorbed into an element present in the semiconductor while applying an X-ray beam to the semiconductor device continuously.

Abstract: An object of the present invention is to realize exertion of p-type conduction without incurring deterioration of crystal in the light-emitting layer or generating contamination, production at a low cost and good ohmic contact with an electrode. The method for producing a p-type gallium nitride-based compound semiconductor of the present invention includes producing a gallium nitride-based compound semiconductor layer doped with a p-type impurity, producing a catalyst layer having a metal, alloy or compound on the gallium nitride-based compound semiconductor layer, and annealing the gallium nitride-based compound semiconductor layer fixed with the catalyst layer.

Abstract: An oxygen sensing element of the type having a solid electrolyte oxygen concentration cell formed as a laminate of thin layers on a ceramic substrate in which a heater is embedded and end portions of lead wires are inserted. To enhance reliability of insulation between a lead wire through which heater current flows and lead wires connected to the concentration cell electrodes, the end portion of the heater lead wire is inserted into the substrate so as to make close contact with a terminal portion of the heater over substantially the entire length thereof and is completely shielded from environmental atmosphere by the substrate. Accordingly, even though a carbonaceous substance may be deposited on the substrate surface during practical use of the element, the possibility of heater current leaking of the concentration cell is obviated.