Abstract: The present invention relates to a chocolate-like food product containing polyunsaturated-fatty-acid-containing oil and fat. An object of the present invention is to provide a chocolate-like food product with reduced flavor change that occurs with time. As a result of the finding that incorporation of amino acid into a chocolate-like food product containing polyunsaturated-fatty-acid-containing oil and fat significantly reduces the unpleasant odor that occurs with time, the present invention has been accomplished. The amino acid is preferably at least one amino acid selected from glycine, glutamic acid, alanine, proline, lysine, tryptophan, methionine, valine, serine, histidine, isoleucine, leucine, phenylalanine, arginine, threonine, cysteine, aspartic acid, glutamine, or asparagine.

Abstract: A hinge cap includes a body and an upper lid connected to each other by a hinge. The body includes a top board and a side wall extending perpendicularly downward from a periphery of the top board. The top board includes a planned opening defined by a weakened portion and a discharge nozzle formed to surround the planned opening. The upper lid includes a top panel and a skirt extending perpendicularly downward from a periphery of the top panel. A protrusion extending in an axial direction of the cap is formed in the planned opening of the body on a side opposite to the hinge such that an end of the protrusion is fixed to an inner surface of the top panel of the upper lid in a closed state.

Abstract: For providing a magnetostrictive film that can exhibit high magnetostrictive properties in the vicinity of zero magnetic field and their manufacturing methods, a magnetostrictive film thermal sprayed on an object under test includes a metallic glass film subjected to thermal processing at a temperature lower than the glass transition temperature and not lower than the Curie point, and shows a linearity between the magnetic field and the magnetostriction in at least a part of the magnetic field from ?15 kA/m to +15 kA/m (both inclusive).

Abstract: A Ti-containing remaining in a chamber of a plasma processing apparatus can be simply and efficiently removed. In a Low-k film etching process, immediately after a dry etching process (process S2) is finished, a dry cleaning process is performed in the presence of a wafer while the wafer is held on an electrostatic chuck 40 (process S3). The dry cleaning process (process S3) is performed to mainly remove the Ti-containing reactant remaining in the chamber 10. To this end, a cleaning gas containing a H2 gas and a N2 gas is introduced into the chamber 10 from a processing gas supply unit 70 at a preset flow rate ratio. Then, a first high frequency power HF for plasma generation is applied to a susceptor 12 at a preset power level, so that plasma is generated within the chamber 10 by the high frequency discharge of the cleaning gas.

Abstract: For providing a magnetostrictive film that can exhibit high magnetostrictive properties in the vicinity of zero magnetic field and their manufacturing methods, a magnetostrictive film thermal sprayed on an object under test includes a metallic glass film subjected to thermal processing at a temperature lower than the glass transition temperature and not lower than the Curie point, and shows a linearity between the magnetic field and the magnetostriction in at least a part of the magnetic field from ?15 kA/m to +15 kA/m (both inclusive).

Abstract: A metallic glass laminate of the present invention is characterized in that a metallic glass layer of amorphous phase is formed on the substrate surface, and there is no continuous pore (pinhole) through the metallic glass layer. The metallic glass laminate is preferably obtained by solidification and lamination of at least part of the metallic glass powder in the molten state or in the supercooled liquid state on the substrate surface. Because of the dense metallic glass layer of homogenous amorphous phase, the functionalities of metallic glass such as corrosion resistance and wear resistance can be satisfactorily provided. A thick and a large-area metallic glass layer can be formed. The metallic glass layer can also be formed into various shapes within the supercooled liquid temperature range. In addition, a metallic glass bulk can be obtained by removing the substrate.

Abstract: In a vacuum processing chamber, an etching is performed on an object to be processed having at least a mask layer formed in a predetermined pattern and a Ti layer, as a layer to be etched, formed under the mask layer. During the etching, a first plasma processing is carried out to etch the Ti layer by using a plasma of an etching gas containing a fluorine compound at an inner pressure of the chamber of 4 Pa or less. Subsequently, a second plasma processing for dry cleaning is performed by using a plasma of a cleaning gas after the first plasma processing is completed. At this time, a deposit containing a Ti compound produced during the plasma processing is removed.

Abstract: A metallic glass laminate of the present invention is characterized in that a metallic glass layer of amorphous phase is formed on the substrate surface, and there is no continuous pore (pinhole) through the metallic glass layer. The metallic glass laminate is preferably obtained by solidification and lamination of at least part of the metallic glass powder in the molten state or in the supercooled liquid state on the substrate surface. Because of the dense metallic glass layer of homogenous amorphous phase, the functionalities of metallic glass such as corrosion resistance and wear resistance can be satisfactorily provided. A thick and a large-area metallic glass layer can be formed. The metallic glass layer can also be formed into various shapes within the supercooled liquid temperature range. In addition, a metallic glass bulk can be obtained by removing the substrate.

Abstract: In etching an insulating film such as an SiOC film or the like, in order to suppress a diameter of a hole or a width of a groove, a pre-processing is performed before performing the etching. In the pre-processing, a processing gas containing CF4 gas and CH3F gas is converted into a plasma, and an opening size of an opening portion of a resist mask is decreased by depositing deposits at a sidewall thereof by using the plasma. Further, in etching the SiOC film, a processing gas containing CF4 gas, CH3F gas, and N2 gas is converted into a plasma by supplying a processing gas atmosphere by using a first high frequency wave for generating the plasma, wherein the electric power divided by a surface area of a substrate becomes over 1500 W/70685.8 mm2 (a surface area of a 300 mm wafer), and then the SiOC film is etched.

Abstract: In a vacuum processing chamber, an etching is performed on an object to be processed having at least a mask layer formed in a predetermined pattern and a Ti layer, as a layer to be etched, formed under the mask layer. During the etching, a first plasma processing is carried out to etch the Ti layer by using a plasma of an etching gas containing a fluorine compound at an inner pressure of the chamber of 4 Pa or less. Subsequently, a second plasma processing for dry cleaning is performed by using a plasma of a cleaning gas after the first plasma processing is completed. At this time, a deposit containing a Ti compound produced during the plasma processing is removed.

Abstract: An end face polishing device has a first revolution shaft mounted for undergoing revolving movement about a first axis, a rotational shaft mounted for undergoing rotation about a second axis eccentric from the first axis, and a second revolution shaft mounted for undergoing revolving movement about a third axis eccentric from the second axis. A polishing disc is connected to the second revolution shaft for revolving movement therewith.

Abstract: A multistage fine-hole machining device has lap stations for lapping an inner surface defining a through-hole of a workpiece. Each of the lap stations has a passing unit for passing wire through the through-hole of the workpiece, a supply unit for supplying a polishing material to the wire, and a sliding unit for effecting relative sliding movement between the workpiece and the wire while the wire is passed through the through-hole of the workpiece and is supplied with the polishing material to thereby lap the inner surface of the workpiece with the polishing material and enlarge the diameter of the through-hole. A transfer device successively transfers the workpiece to each of the lap stations to lap the inner surface of the workpiece at each of the lap stations during the lapping operation for successively enlarging the diameter of the through-hole to a preselected diameter.

Abstract: The invention provides an end face polishing device high in polishing speed. The end face polishing device has a pressing unit pressing an end face of a fixed bar member to a polishing sheet and a driving unit driving the polishing sheet in roulette shape moving while rotating on circumference parallel to the end face of the bar member.

Abstract: To provide a multistage fine hole machining device capable of performing fine hole machining with high precision without edge sagging and non-uniformity of a hole in a short cycle time. A plurality of fine hole lap stations for passing a wire through a hole of a workpiece and lapping the hole with a polishing material between the hole and the wire are placed, and the workpiece is successively transferred to fine hole lap stations in which the thickness of a wire is increased gradually, whereby a hole diameter is enlarged to obtain a desired diameter.

Abstract: An end face polishing apparatus in which whereas a jig board mounted with a rod-like member is supported by an apparatus main body by a supporting mechanism, a polishing board mounted with a polishing member for polishing the rod-like member is supported by the apparatus main body rotatably and pivotably by a drive mechanism for polishing the rod-like member mounted to the jig board by the supporting mechanism by pressing the rod-like member to the rotating and pivoting polishing board, wherein the polishing member is mounted to the polishing board attachably thereto and detachably therefrom, further comprising an automatic interchanging device for interchanging the polishing member which is mounted to the polishing board and which has been used with the polishing member which is stored at a predetermined position and which is to be used by which the operational performance is promoted.

Abstract: An end face polishing apparatus in which whereas a jig board mounted with a rod-like member is supported by an apparatus main body by a supporting mechanism, a polishing board mounted with a polishing member for polishing the rod-like member is supported by the apparatus main body rotatably and pivotably by a drive mechanism for polishing the rod-like member mounted to the jig board by the supporting mechanism by pressing the rod-like member to the rotating and pivoting polishing board, wherein the polishing member is mounted to the polishing board attachably thereto and detachably therefrom, further comprising an automatic interchanging device for interchanging the polishing member which is mounted to the polishing board and which has been used with the polishing member which is stored at a predetermined position and which is to be used by which the operational performance is promoted.

Abstract: An end face polishing apparatus comprises a polishing board and a jig board for supporting workpieces. A polishing member is detachably arranged on the polishing board and has a polishing film for polishing end faces of the workpieces while the workpieces are supported by the jig board. A first holding device holdings unused polishing members each having a new polishing film preliminarily attached thereto. At least one second holding device holds used polishing members which have been removed from the polishing board. A polishing member exchanging device is mounted for linear movement in horizontal and vertical directions for exchanging a used polishing member arranged on the polishing board with an unused polishing member by seizing the used polishing member from the polishing board and conveying the used polishing member to the second holding device, and by taking an unused polishing member from the first holding device and placing the unused polishing member on the polishing board.

Abstract: An end face polishing apparatus comprises a jig plate for supporting a workpiece, a polishing member for polishing an end face of the workpiece, and a movable lever connected to the jig plate. A pressurizing section presses the lever to bring the end face of the workpiece into pressure contact with the polishing member. The pressurizing section has a first spring member for biasing the lever in a first direction, a pressurizing head for biasing the lever in a second direction opposite to the first direction, a second spring member for biasing the pressurizing head in the second direction, and a pressure sensor disposed between the pressurizing head and the lever for detecting a pressure applied by the end face of the ferrule onto the polishing member when the lever is pressed by the pressurizing section. A pressurization control section controls the pressure applied by the end face of the workpiece onto the polishing member when the lever is pressed by the pressurizing section.

Abstract: A chuck spindle apparatus comprises a chuck spindle mounted for rotation about a central rotational axis, a chuck main body integrally connected to a forward end of the chuck spindle for rotation therewith, and an indexing device. The chuck main body has a chuck portion for bringing any one of a series of fabrication centers of a workpiece into coincidence with the central rotational axis to thereby chuck the workpiece. The indexing device is disposed within the chuck main body for moving the chuck portion of the chuck main body to bring another one of the fabrication centers of the workpiece into coincidence with the central rotational axis while the workpiece is chucked by the chuck portion of the chuck main body.

Abstract: A process for refining aluminum using a segregation solidification process under a positive pressure inert gas protecting atmosphere comprising, maintaining the temperature of molten aluminum in the vessel by a plurality of electric heater sections arranged around the periphery of said vessel in vertically superposed relationship to each other, cooling a narrow peripheral portion of the inner surface of said vessel beneath the level of the molten aluminum therein by means of a peripheral cooling section arranged around the periphery of said vessel between adjacent heater sections to crystallize the molten aluminum onto said peripheral portion of the inner surface of said vessel, scraping off the refined and solidified aluminum on said peripheral portion by scraping and tamping means having a cross-sectional configuration complementary to that of the inner surface of said vessel, tamping the heaped aluminum by said scraping and tamping means, and deenergizing some of said heater sections located at positions a