Abstract: A plasma display panel in which a plurality of pairs of first and second electrodes are disposed on a first substrate so as to be parallel to each other, a plurality of third electrodes are disposed on a second substrate, and main parts of a plurality of barrier ribs are disposed between adjacent third electrodes, the third electrodes being orthogonal to a longitudinal direction of display electrodes each of which consists of a pair of the first and second electrodes, wherein a plurality of fourth electrodes are fixed to the barrier ribs or areas of a surface of the first substrate facing the barrier ribs so as to be at least in vicinities of areas between adjacent display electrodes, the fourth electrodes being electrically exposed to discharge spaces which are defined by the barrier ribs.

Abstract: A method for restoring the function of a plasma display panel according to the present invention restores a function of a plasma display panel by raising the temperature of the plasma display panel to 400° C. to 800° C.

Abstract: A fluorine-containing precoating (not shown) is formed to cover a phosphor particle (7) by, for example, a physical vapor deposition of a fluoride. Then, a fluorine-containing coating (8) covering the phosphor particle (7) is formed by supplying fluorine into the precoating. Thus obtained phosphor particle (7) with the coating (8) is applied in the form of a paste to a substrate (1) on each electrode (2) is between adjacent two ribs (4) to form a phosphor layer (6) including the phosphor particles (7) between the ribs (4) on the substrate (1). The substrate (1) is positioned with respect to another substrate (not shown) having electrodes thereon to form discharge spaces between the substrates. The discharge spade is filled with a discharge gas to produce a plasma display panel (PDP).

Abstract: Phosphors having high luminescence characteristics are provided while achieving manufacturing cost reductions by minimizing the usage amount of Eu, the luminescence center. Also provided are a display device (PDP, etc) and a fluorescent lamp having excellent display and/or luminescence characteristics as a result of using the phosphors, while achieving manufacturing cost reductions by minimizing the Eu usage amount.

Abstract: By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities of an interface of a substrate or smoothing of its surface may be achieved. With this arrangement, it is possible to achieve improvements in crystallinity of the crystalline silicon film that is formed in a low temperature condition through CVD method and to prevent concaves and convexes from being formed on its surface or to prevent oxidation of grain fields, and it is accordingly possible to provide a thin film transistor, a semiconductor device such as a solar cell and methods for manufacturing these that exhibit superior characteristics and reliability.

Abstract: A light emitting device that emits visible light caused by ultraviolet rays from a discharge generated in a discharge medium including a rare gas, wherein a phosphorous material is disposed in a vessel that is hermetically sealed and contains the discharge medium, and a photocatalyst is disposed at one or more positions inside the vessel, the positions being reachable for one or both of the ultraviolet rays and light emitted from the phosphorous material, so that the photocatalyst is in contact with the discharge medium.

Abstract: A plasma display panel is composed of a first substrate and a second substrate facing each other via a discharge space and sealed together. A protective layer on the first substrate is composed principally of magnesium oxide, includes a substance or structure that creates a first energy level in an area of a forbidden band, the area being in a vicinity of a conduction band, and includes a substance or structure that creates a second energy level in another area in the forbidden band, the other area being in a vicinity of a valence band. During driving the second energy level is occupied by electrons, and few electrons exist in the first energy level, or electrons can easily occupy the first energy level due to a minus charge state, and MgO insultaive resistance is not lowered. This maintains wall charge retention and reduces discharge irregularities and firing voltage Vf.

Abstract: By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities of an interface of a substrate or smoothing of its surface may be achieved. With this arrangement, it is possible to achieve improvements in crystallinity of the crystalline silicon film that is formed in a low temperature condition through CVD method and to prevent concaves and convexes from being formed on its surface or to prevent oxidation of grain fields, and it is accordingly possible to provide a thin film transistor, a semiconductor device such as a solar cell and methods for manufacturing these that exhibit superior characteristics and reliability.

Abstract: In the production of channel etch type bottom gate thin film transistors, etching damage in a channel etch step is prevented to improve the transistor performance. The channel etch is performed using non-ionic excited species, such as hydrogen radicals and fluorine radicals, generated by contact-decomposition reaction which utilizes a metal heated by electric resistance heating. Alternatively, in place of the channel etch, a portion of the source/drain semiconductor thin film immediately above the channel is nitrided by a non-ionic nitrogen-containing decomposition product that is produced by contacting molecules of a chemical substance containing nitrogen atoms with a metal heated by electric resistance heating to decompose the chemical molecules.

Abstract: By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities of an interface of a substrate or smoothing of its surface may be achieved. With this arrangement, it is possible to achieve improvements in crystallinity of the crystalline silicon film that is formed in a low temperature condition through CVD method and to prevent concaves and convexes from being formed on its surface or to prevent oxidation of grain fields, and it is accordingly possible to provide a thin film transistor, a semiconductor device such as a solar cell and methods for manufacturing these that exhibit superior characteristics and reliability.

Abstract: In the production of channel etch type bottom gate thin film transistors, etching damage in a channel etch step is prevented to improve the transistor performance. The channel etch is performed using non-ionic excited species, such as hydrogen radicals and fluorine radicals, generated by contact-decomposition reaction which utilizes a metal heated by electric resistance heating. Alternatively, in place of the channel etch, a portion of the source/drain semiconductor thin film immediately above the channel is nitrided by a non-ionic nitrogen-containing decomposition product that is produced by contacting molecules of a chemical substance containing nitrogen atoms with a metal heated by electric resistance heating to decompose the chemical molecules.

Abstract: In the production of channel etch type bottom gate thin film transistors, etching damage in a channel etch step is prevented to improve the transistor performance. The channel etch is performed using non-ionic excited species, such as hydrogen radicals and fluorine radicals, generated by contact-decomposition reaction which utilizes a metal heated by electric resistance heating. Alternatively, in place of the channel etch, a portion of the source/drain semiconductor thin film immediately above the channel is nitrided by a non-ionic nitrogen-containing decomposition product that is produced by contacting molecules of a chemical substance containing nitrogen atoms with a metal heated by electric resistance heating to decompose the chemical molecules.

Abstract: A precursor for manufacturing a semiconductor thin film in which an oxide thin film comprising at least one element as a dopant, selected from a group which consists of Groups IA, IIA, IIB, VA, and VB elements, and Groups IB and IIIA elements which are main components of the semiconductor thin film are deposited on a substrate, or a precursor for manufacturing a semiconductor thin film which is formed by depositing a thin film of oxide comprising the Groups IB and IIIA elements on the substrate wherein the content of at least one of the Groups IB and IIIA elements is varied in the direction of film thickness, and a method for manufacturing a semiconductor thin film comprising the step of heat treating the precursor for manufacturing the semiconductor thin film in an atmosphere containing a Group VIA element.

Abstract: A solar cell includes a compound semiconductor, which is a laminated film having compound semiconductor layers, and low melting point glass. When the solar cell is heated by fire, the low melting point glass melts to seal the compound semiconductor so that toxic substances contained in the compound semiconductor are not released into the air.