Abstract: In an image acquisition device, an optical path length difference in a second light figure can be formed by arrangement of an optical path difference generating member, without need for splitting light in a second optical path for focus control. Therefore, it reduces the quantity of light into the second optical path necessary for acquisition of information of focal position while ensuring the quantity of light enough for execution of imaging by a first imaging device. Furthermore, in this image acquisition device, a light reduction portion is provided between a first face and a second face of the optical path difference generating member. This light reduction portion can narrow a light superimposed region on the imaging surface of the second imaging device, which allows control of the focal position to a sample to be accurately carried out.

Abstract: In an image acquisition device, an optical path length difference in a second light figure can be formed by arrangement of an optical path difference generating member, without need for splitting light in a second optical path for focus control. Therefore, it reduces the quantity of light into the second optical path necessary for acquisition of information of focal position while ensuring the quantity of light enough for execution of imaging by a first imaging device. Furthermore, in this image acquisition device, a light reduction portion is provided between a first face and a second face of the optical path difference generating member. This light reduction portion can narrow a light superimposed region on the imaging surface of the second imaging device, which allows control of the focal position to a sample to be accurately carried out.

Abstract: For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3.

Abstract: For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3.

Abstract: For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3.

Abstract: For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index no and a thickness to of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index no and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3.

Abstract: For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3.

Abstract: For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index no and a thickness to of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index no and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3.