Abstract: A method for manufacturing a semiconductor device, includes (a) dry-etching an aluminum-containing interconnecting layer, which is formed on a wafer, using reactive gas containing chlorine and/or chloride; (b) converting reactive gas, which contains a compound having at least a hydrogen atom, into a plasma at a temperature of 20.degree. to 150.degree. C. and removing remaining chlorine by activated hydrogen; and (c) converting oxygen-containing reactive gas into a plasma at a temperature of 20.degree. to 150.degree. C. and removing a resist layer chiefly by ashing. If the temperatures in the steps (b) and (c) are set to be low, there would be no obstacle in removing a sidewall protection layer formed by etching the aluminum-containing interconnecting layer.

Abstract: Plasma light beams emitted from a plurality of monitoring areas on a wafer are introduced via windows and optical fibers, respectively, and detected by a detector. The detector determines etching end times of the respective monitoring areas. A calculating section calculates a maximum allowable etching end time based on the first-determined etching end time and a predetermined uniformity standard. If the etching ends of all the monitoring areas have not been determined at the time point of the calculated maximum allowable etching end time, a controller immediately stops the etching process.

Abstract: Plasma light beams emitted from a plurality of monitoring areas on a wafer are introduced via windows and optical fibers, respectively, and detected by a detector. The detector determines etching end times of the respective monitoring areas. A calculating section calculates a maximum allowable etching end time based on the first-determined etching end time and a predetermined uniformity standard. If the etching ends of all the monitoring areas have not been determined at the time point of the calculated maximum allowable etching end time, a controller immediately stops the etching process.