Patents by Inventor Masahide Goto

Masahide Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication method of silicon carbide semiconductor device
    Patent number: 9040402
    Abstract: A first metal layer (3) is formed on a back face of a silicon carbide substrate (1) to a degree such that the first metal layer (3) does not fully cover the back face of the silicon carbide substrate. Many holes (4) are formed on the back face of the silicon carbide substrate (1) by dry-etching the back face of the silicon carbide substrate (1) using the first metal layer (3) as a mask therefor. A second metal layer constituting an ohmic contact is formed on the first metal layer (3) and the back face of the silicon carbide substrate (1) including inner surfaces of the many holes (4).
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: May 26, 2015
    Assignees: FUJI ELECTRIC CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Masahide Goto, Kenji Fukuda, Noriyuki Iwamuro
  • FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE
    Publication number: 20150064898
    Abstract: A first metal layer (3) is formed on a back face of a silicon carbide substrate (1) to a degree such that the first metal layer (3) does not fully cover the back face of the silicon carbide substrate. Many holes (4) are formed on the back face of the silicon carbide substrate (1) by dry-etching the back face of the silicon carbide substrate (1) using the first metal layer (3) as a mask therefor. A second metal layer constituting an ohmic contact is formed on the first metal layer (3) and the back face of the silicon carbide substrate (1) including inner surfaces of the many holes (4).
    Type: Application
    Filed: March 14, 2013
    Publication date: March 5, 2015
    Applicants: FUJI ELECTRIC CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Masahide Goto, Kenji Fukuda, Noriyuki Iwamuro
  • Novel Activating Agent of Glucose Uptake and a Screening Method Therefor
    Publication number: 20080070249
    Abstract: An activating agent of glucose uptake comprising as an active ingredient a substance having a PGC-1? function; and a method of screening for an activating agent of glucose uptake, comprising the steps of bringing a substance to be tested into contact with a promoter of a PGC-1? gene and analyzing a promoter activity of a PGC-1? gene, are disclosed. The activating agent of glucose uptake is a novel antidiabetic agent capable of promoting glucose uptake in a muscle tissue at hyperglycemia regardless of a blood insulin level.
    Type: Application
    Filed: March 14, 2006
    Publication date: March 20, 2008
    Applicant: ASTELLAS PHARMA INC.
    Inventors: Masahide Goto, Teruhiko Shimokawa
  • Human pgc-1 promoter
    Publication number: 20040115626
    Abstract: A DNA having an hPGC-1 promoter activity; a method of screening a substance modifying this promoter activity; and drugs, which contain substances modifying the promoter activity as the active ingredient, for activating mitochondria and treating obesity and/or diabetes based on the activation of mitochondria.
    Type: Application
    Filed: September 5, 2002
    Publication date: June 17, 2004
    Inventors: Masahide Goto, Teruhiko Shimokawa