Abstract: A semiconductor device, including: a front-surface-side metal layer provided above a semiconductor substrate; a plated layer provided on an upper surface of the front-surface-side metal layer; a barrier layer which is provided on the upper surface of the front-surface-side metal layer, and provided being in direct contact with the plated layer on the upper surface of the front-surface-side metal layer; and an insulation protecting layer provided on the barrier layer, is provided. A semiconductor module, including: the semiconductor device; a lead frame provided above a front-surface-side metal layer; and an adhesive layer for connecting the front-surface-side metal layer to the lead frame, is provided.

Abstract: In a silicon carbide semiconductor device in which a contact electrode is formed on a single-crystal silicon carbide semiconductor substrate, a barrier metal (titanium nitride layer) covers an interlayer insulating film in a region other than a contact hole, and a contact electrode of a predetermined electrode material is formed only in a region on the silicon carbide semiconductor substrate in the contact hole opened in the interlayer insulating film on the silicon carbide semiconductor substrate. A top of the barrier metal is covered by a metal electrode (wiring layer) and no nickel metal aggregates are present between the barrier metal and the metal electrode.

Abstract: In a silicon carbide semiconductor device in which a contact electrode is formed on a single-crystal silicon carbide semiconductor substrate, a barrier metal (titanium nitride layer) covers an interlayer insulating film in a region other than a contact hole, and a contact electrode of a predetermined electrode material is formed only in a region on the silicon carbide semiconductor substrate in the contact hole opened in the interlayer insulating film on the silicon carbide semiconductor substrate. A top of the barrier metal is covered by a metal electrode (wiring layer) and no nickel metal aggregates are present between the barrier metal and the metal electrode.

Abstract: A silicon carbide semiconductor switching device having a planar metal oxide semiconductor insulated gate structure. The silicon carbide semiconductor switching device includes a silicon carbide semiconductor substrate having a bandgap wider than that of silicon, a drift layer formed on the silicon carbide semiconductor substrate, a base region selectively formed in the drift layer at a top surface thereof, a source contact region selectively formed in the base region at a top surface thereof, a trench formed in the drift layer at the top surface thereof, the trench having a depth that is shallower than a depth of the source contact region, a gate electrode embedded in the trench, a top surface of the gate electrode being substantially flush with a top surface of the source contact region, and an interlayer insulating film formed on the top surfaces of the source contact region and the gate electrode.

Abstract: In a silicon carbide semiconductor device in which a contact electrode is formed on a single-crystal silicon carbide semiconductor substrate, a barrier metal (titanium nitride layer) covers an interlayer insulating film in a region other than a contact hole, and a contact electrode of a predetermined electrode material is formed only in a region on the silicon carbide semiconductor substrate in the contact hole opened in the interlayer insulating film on the silicon carbide semiconductor substrate. A top of the barrier metal is covered by a metal electrode (wiring layer) and no nickel metal aggregates are present between the barrier metal and the metal electrode.

Abstract: A silicon carbide semiconductor switching device having a planar metal oxide semiconductor insulated gate structure. The silicon carbide semiconductor switching device includes a silicon carbide semiconductor substrate having a bandgap wider than that of silicon, a drift layer formed on the silicon carbide semiconductor substrate, a base region selectively formed in the drift layer at a top surface thereof, a source contact region selectively formed in the base region at a top surface thereof, a trench formed in the drift layer at the top surface thereof, the trench having a depth that is shallower than a depth of the source contact region, a gate electrode embedded in the trench, a top surface of the gate electrode being substantially flush with a top surface of the source contact region, and an interlayer insulating film formed on the top surfaces of the source contact region and the gate electrode.

Abstract: A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film.

Abstract: A silicon carbide MOS semiconductor device is disclosed which suppresses degradation of efficiency percentage yield with respect to a breakdown voltage even when a surface region with a high impurity concentration is formed by ion implantation with such a high dose as required for attaining a good ohmic contact.

Abstract: A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film.

Abstract: A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film.

Abstract: A silicon carbide MOS semiconductor device is disclosed which suppresses degradation of efficiency percentage yield with respect to a breakdown voltage even when a surface region with a high impurity concentration is formed by ion implantation with such a high dose as required for attaining a good ohmic contact.

Abstract: A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film.