Abstract: A method of producing a sheet type laundry detergent which comprises continuously or discontinuously applying a doughy detergent composition that has been prepared so as to have a viscosity of 1,000 mPa·s to 50,000 mPa·s at a shear rate of 10 s?1 to 1,000 s?1 onto a flexible support of continuous length that is running continuously in a prescribed direction under a shear rate condition of 10 s?1 to 1,000 s?1 by an application to form a thin layer of the doughy detergent composition.

Abstract: An intermittently laying method for intermittently forming laid layers (14) comprising a fluidized substance (13) laid thereon on a surface of a sheet-like member (12) moving in one direction, in the moving direction, the method comprising steps of: folding a part of the sheet-like member (12) corresponding to a non-laid portion (15) between adjacent laid portions inwardly towards a back surface side of the sheet-like member (12) on an upstream side of a coating head (16) for laying the fluidized substance (13) on the sheet-like member (12) thereby forming a continuous surface-to-be-laid (30) on a surface side; continuously supplying the fluidized substance (13) from the laying means to the surface-to-be-laid thereby forming the laid layer (14); bringing back the inwardly folded non-laid portion (15) so as to be flush with the surface-to-be-laid (30) on a downstream side of the coating head (16); and intermittently interposing the non-laid portion (15) between continuously laid adjacent laid layers (14).

Abstract: In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Abstract: In order to provide a high-speed and high accuracy cell projection exposure apparatus which greatly increases a pattern projection speed, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Abstract: In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Abstract: In order to provide a high-speed and high accuracy cell projection exposure apparatus which greatly increases a pattern projection speed, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Abstract: In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil masks with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Abstract: In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Abstract: In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Abstract: The present invention provides an electron beam exposure method and an exposure apparatus suitable for use in the electron beam exposure technology for performing exposure on a sample placed on a sample table by an electron beam while continuously moving the sample table, both of which are capable of performing high-accuracy and high-speed exposure without being affected by glitch noise of a DA converter used for trace deflection of the electron beam. Displacements of the position of the sample table and the position to apply the electron beam are determined and the determined displacements are divided into the amount of a shot synchronous trace and the amount of a real time trace each synchronized with shot timing for applying the electron beam to thereby reduce the amount of the real time trace, whereby degradation in exposure accuracy due to the glitch noise of the DA converter used for trace deflection is prevented from occurring. It is therefore possible to carry out high-accuracy exposure.

Abstract: In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Abstract: In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Abstract: In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Abstract: In a semiconductor circuit device fabricating process in which a reduction image projection exposure apparatus and an electron beam exposure apparatus are in a mixed use in its exposure process, pattern position shift errors for each exposure apparatus are measured and corrected at the time of drawing by means of an electron beam drawing apparatus, thereby enhancing the alignment accuracy.First, a pattern for measuring position shifts is exposed using a stepper and the electron beam drawing apparatus. Then, the position shift errors are measured using an identical coordinate position measuring device. Accidental errors have been mixed in the measurement result at this time. On account of this, measurement data at a certain point are smoothed by taking a summation average with data on the periphery thereof, thus decreasing influences of the accidental errors. Moreover, by inverting positive or negative signs of the data on the position shift errors, the data are made into correction data.

Abstract: In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

Abstract: A blanking array is used for controlling an electron beam in an electron beam writing system. Electrodes in the array are formed in parallel and two sets of the parallel electrodes, orthogonal to one another, are used for dividing the electron beam into a plurality of individual exposure areas. The sets of parallel electrodes can be formed in one array by a wire mesh or in two separate arrays spaced closely together or farther apart at different focal point positions. The electrodes are provided to extend across an aperture, such as a square or triangular aperture. For a triangular aperture, the electrodes are made parallel to the hypotenuse of the triangle. The writing patterns are formed by combining the exposure areas. Control of each exposure area is realized by applying opposite polarity voltage to adjacent electrodes in order to deflect the portion of the beam passing between the adjacent electrodes.

Abstract: A charged particle beam exposure apparatus includes an irradiator for irradiating a sample with a charged particle beam, an analog controller for analog controlling the charged particle beam, a digital controller for digital controlling the analog controller, and a digital transmission path connecting the analog controller to the digital controller. The analog controller is disposed inside a room, and the digital controller is disposed outside the room.

Abstract: An elevator adjusting apparatus for adjusting a brake torque produced by a brake for braking travel of an elevator cage includes a brake torque adjustment mode setting unit for setting an adjustment mode for the brake torque, a cage position recognizing unit for recognizing a cage position, a cage speed detecting unit for detecting a cage speed, a brake actuation command generating unit for reissuing a brake actuation command generating unit for issuing a brake actuation command when the brake torque adjustment mode is set by the brake torque adjustment mode setting unit and the cage position recognizing unit recognizes that the cage position has reached a predetermined position of a lift passage, a brake control unit for actuating the brake in response to the brake actuation command issued from the brake actuation command generating unit, and a brake torque calculating unit for calculating the brake torque based on the cage speed detected by the cage speed detecting unit during the brake actuation.

Abstract: A column section is disposed within a thermostatic chamber within a clean room, a section for analog controlling each portion of the column section is disposed within the clean room and outside of the thermostatic chamber, and a section for digital controlling the analog control section is disposed outside of the clean room.

Abstract: An elevator control apparatus which compensates for an insufficient gain of the entire control system caused by a drop in power source voltage or the like includes an electric power control circuit for controlling electric power for feeding to an electric motor which drives the car of an elevator, a speed command generating circuit for generating a speed command signal of the car, a speed detecting circuit for detecting the speed of the car, a computing circuit for calculating the deviation between a speed detecting signal obtained by the speed detecting device and a speed command signal generated by the speed command generating circuit, a compensating circuit for outputting an electric power command signal in which gain properties and phase properties have been compensated in accordance with the deviation calculated by the computing circuit, a comparing circuit for determining whether or not the deviation calculated by the computing circuit exceeds a first specified value, and a damping gain setting circuit