Abstract: Disclosed is a process for producing a fluoride gas that can produces fluoride gases such as BF3, SiF4, GeF4, PF5 or AsF5 at a reduced production cost in a simple manner. The process is characterized in that a compound containing an atom, which, together with a fluorine atom, can form a polyatomic ion, is added to a hydrogen fluoride solution to produce the polyatomic ion in a hydrogen fluoride solution and to evolve a fluoride gas comprising the fluorine atom and the atom that, together with the fluorine atom, can form a polyatomic ion.

Abstract: An object of the invention is to provide a tetrafluoroborate producing method that allows high-yield, high-efficiency production of a tetrafluoroborate by a continuous process, a tetrafluoroborate-containing electrolyte, and an electrical storage device including such an electrolyte. The invention provides a method for producing a tetrafluoroborate, which includes: a first step including dissolving boron trifluoride gas in an organic solvent; a second step including adding, to the organic solvent, a fluoride (MFn, wherein M represents a metal or NH4, and 1?n?3) in an amount stoichiometrically equivalent to or less than the amount of the boron trifluoride so that a tetrafluoroborate solution is produced; and a third step including circulating the tetrafluoroborate solution through the first step so that the boron trifluoride gas is dissolved in the tetrafluoroborate solution instead of the organic solvent.

Abstract: An object is to provide a method of manufacturing a hexafluorophosphate, that can simply and easily manufacture an inexpensive and high-quality hexafluorophosphate while suppressing the manufacturing cost, an electrolytic solution containing a hexafluorophosphate, and an electricity storage device including the electrolytic solution. The present invention relates to a method of manufacturing a hexafluorophosphate, which comprises reacting at least a phosphorus compound with a fluoride represented by MFs.r(HF) (wherein 0?r?6, 1?s?3, and M is at least one kind selected from the group consisting of Li, Na, K, Rb, Cs, NH4, Ag, Mg, Ca, Ba, Zn, Cu, Pb, Al and Fe) to produce a hexafluorophosphate represented by the chemical formula M(PF6)s.

Abstract: An object the invention is to provide a phosphorus pentafluoride producing process wherein phosphorus pentafluoride is separated/extracted from a pentavalent phosphorus compound or a solution thereof, or a composition obtained by allowing the pentavalent phosphorus compound or the solution thereof to react with hydrogen fluoride, thereby producing phosphorus pentafluoride; and a phosphate hexafluoride producing process wherein the resultant phosphorus pentafluoride is used as raw material to produce a phosphate hexafluoride high in purity. The present invention relates to a process for producing phosphorus pentafluoride, wherein a carrier gas is brought into contact with either of the following one: a pentavalent phosphorus compound, a solution thereof, or a solution in which a composition obtained by allowing the pentavalent phosphorus compound or the solution thereof to react with hydrogen fluoride is dissolved, thereby a phosphorus pentafluoride is extracted into the career gas.

Abstract: A production method of high purity silver tetrafluoroborate, capable of producing silver tetrafluoroborate (AgBF4) at purity higher than the conventional, without using an organic solvent. The production method of the present invention is characterized in that the method comprises the step of: reacting silver fluoride with boron trifluoride in the presence of anhydrous hydrofluoric acid. Boron trifluoride is delivered into a solution obtained by dissolving or suspending silver fluoride in an anhydrous hydrofluoric acid solution.

Abstract: A method of manufacturing phosphorus pentafluoride and hexafluorophosphate can suppress the manufacturing cost and also can manufacture high-quality phosphorus pentafluoride from an inexpensive and low-quality raw material. The raw material for the method can include at least a phosphorus atom and a fluorine atom. These are brought into contact with a carrier gas, and a phosphorus pentafluoride is extracted and separated into the carrier gas. A method of manufacturing hexafluorophosphate includes reacting fluoride with the resulting phosphorus pentafluoride according to the following chemical reaction scheme: sPF5+AFs?A(PF6)s, in which s is in the range of 1?s?3, and A is at least one of the following: Li, Na, K, Rb, Cs, NH4, Ag, Mg, Ca, Ba, Zn, Cu, Pb, Al and Fe.

Abstract: In the manufacturing method of hexafluorophosphate (MPF6: M=Li, Na, K, Rb, Cs, NH4, and Ag) of the present invention, at least a HxPOyFz aqueous solution, a hydrofluoric acid aqueous solution, and MF.r (HF) are used as raw materials (wherein, r?0, 0?x?3, 0?y?4, and 0?z?6). According to the above description, a manufacturing method of hexafluorophosphate can be provided which is capable of manufacturing hexafluorophosphate (GPF6: G=Li, Na, K, Rb, Cs, NH4, and Ag) at a low cost in which the raw materials can be easily obtained, the control of the reaction is possible, and the workability is excellent.

Abstract: Provided is a process for purifying a fluorine compound capable of yielding a highly pure fluorine compound by removing at least oxygen from a fluorine compound containing an oxygen compound as an impurity. In a process according to the present invention for purifying a fluorine compound, the following is brought into contact with the fluorine compound, which contains an oxygen compound as an impurity, thereby removing at least oxygen: carbonyl fluoride in an amount of a 0.1-fold equivalent or more and a 100-fold equivalent or less of oxygen atoms in the fluorine compound.

Abstract: An object of the invention is to provide a tetrafluoroborate producing method that allows high-yield, high-efficiency production of a tetrafluoroborate by a continuous process, a tetrafluoroborate-containing electrolyte, and an electrical storage device including such an electrolyte. The invention provides a method for producing a tetrafluoroborate, which includes: a first step including dissolving boron trifluoride gas in an organic solvent; a second step including adding, to the organic solvent, a fluoride (MFn, wherein M represents a metal or NH4, and 1?n?3) in an amount stoichiometrically equivalent to or less than the amount of the boron trifluoride so that a tetrafluoroborate solution is produced; and a third step including circulating the tetrafluoroborate solution through the first step so that the boron trifluoride gas is dissolved in the tetrafluoroborate solution instead of the organic solvent.

Abstract: An object of the invention is to provide a process for preparing a fluorine compound, which can easily give the objective fluorine compound using an oxygen-containing compound as a raw material without forming water as impurities as a by-product. The process for preparing a fluorine compound according to the invention includes reacting an oxygen-containing compound, which is at least one kind selected from the group consisting of oxides, hydroxides, hydrates, carbonic acid compounds, hydrogencarbonic acid compounds, boric acid compounds, sulfuric acid compounds, sulfurous acid compounds, phosphorous acid compounds and phosphoric acid compounds of at least any one kind selected from the group consisting of metal elements, H, B, C, N, Si, P, S, As, Se, Te and halogens, at least with carbonyl fluoride to form at least a fluorine compound and carbon dioxide without forming water as a by-product.

Abstract: An object the invention is to provide a phosphorus pentafluoride producing process wherein phosphorus pentafluoride is separated/extracted from a pentavalent phosphorus compound or a solution thereof, or a composition obtained by allowing the pentavalent phosphorus compound or the solution thereof to react with hydrogen fluoride, thereby producing phosphorus pentafluoride; and a phosphate hexafluoride producing process wherein the resultant phosphorus pentafluoride is used as raw material to produce a phosphate hexafluoride high in purity. The present invention relates to a process for producing phosphorus pentafluoride, wherein a carrier gas is brought into contact with either of the following one: a pentavalent phosphorus compound, a solution thereof, or a solution in which a composition obtained by allowing the pentavalent phosphorus compound or the solution thereof to react with hydrogen fluoride is dissolved, thereby a phosphorus pentafluoride is extracted into the career gas.

Abstract: A method of manufacturing phosphorus pentafluoride and hexafluorophosphate can suppress the manufacturing cost and also can manufacture high-quality phosphorus pentafluoride from an inexpensive and low-quality raw material. The raw material for the method can include at least a phosphorus atom and a fluorine atom. These are brought into contact with a carrier gas, and a phosphorus pentafluoride is extracted and separated into the carrier gas. A method of manufacturing hexafluorophosphate includes reacting fluoride with the resulting phosphorus pentafluoride according to the following chemical reaction scheme: sPF5+AFs?A(PF6)s, in which s is in the range of 1?s?3, and A is at least one of the following: Li, Na, K, Rb, Cs, NH4, Ag, Mg, Ca, Ba, Zn, Cu, Pb, Al and Fe.

Abstract: Disclosed is a process for producing a fluoride gas that can produces fluoride gases such as BF3, SiF4, GeF4, PF5 or AsF5 at a reduced production cost in a simple manner. The process is characterized in that a compound containing an atom, which, together with a fluorine atom, can form a polyatomic ion, is added to a hydrogen fluoride solution to produce the polyatomic ion in a hydrogen fluoride solution and to evolve a fluoride gas comprising the fluorine atom and the atom that, together with the fluorine atom, can form a polyatomic ion.

Abstract: An isotope enrichment method comprising the step of performing the isotope exchange between an aqueous solution containing at least two components each represented by the formula: H2O—H2SiF6.nSiF4 (wherein n?0) and a gas containing SiF4 to enrich a stable Si isotope.

Abstract: An object is to provide a method of manufacturing a hexafluorophosphate, that can simply and easily manufacture an inexpensive and high-quality hexafluorophosphate while suppressing the manufacturing cost, an electrolytic solution containing a hexafluorophosphate, and an electricity storage device including the electrolytic solution. The present invention relates to a method of manufacturing a hexafluorophosphate, which comprises reacting at least a phosphorus compound with a fluoride represented by MFs.r(HF) (wherein 0?r?6, 1?s?3, and M is at least one kind selected from the group consisting of Li, Na, K, Rb, Cs, NH4, Ag, Mg, Ca, Ba, Zn, Cu, Pb, Al and Fe) to produce a hexafluorophosphate represented by the chemical formula M(PF6)s.

Abstract: A process for phosphorus pentafluoride production by which high-purity phosphorus pentafluoride can be produced by a simple and economical procedure without the need of a large-scale purification apparatus or high-pressure apparatus and without generating a large amount of a by-product gas requiring a special discharge-gas treatment. The process for phosphorus pentafluoride production is characterized by introducing hydrogen fluoride and a hexafluorophosphate (MPF6) into a vessel and reacting them according to the reaction shown by the scheme (1) to yield phosphorus pentafluoride. MPF6+uHF?PF5+MF r(HF) (Scheme 1) In the scheme, M is at least any one of Li, Na, K, Rb, Cs, NH4, and Ag; 0?r?u; and the HF is used in an amount not smaller than the stoichiometric amount.

Abstract: In the manufacturing method of hexafluorophosphate (MPF6: M=Li, Na, K, Rb, Cs, NH4, and Ag) of the present invention, at least a HxPOyFz aqueous solution, a hydrofluoric acid aqueous solution, and MF.r (HF) are used as raw materials (wherein, r?0, 0?x?3, 0?y?4, and 0?z?6). According to the above description, a manufacturing method of hexafluorophosphate can be provided which is capable of manufacturing hexafluorophosphate (GPF6: G=Li, Na, K, Rb, Cs, NH4, and Ag) at a low cost in which the raw materials can be easily obtained, the control of the reaction is possible, and the workability is excellent.

Abstract: A carbon nanotube aggregate and a method for forming a carbon nanotube aggregate are provided. The carbon nanotube aggregate can be formed by treating carbon nanotubes with fluorine gas and sintering the resulting fluorinated carbon nanotubes. A carbon nanotube aggregate can be formed which does not contain a binder or resin matrix.

Abstract: A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, a fine treatment agent which makes fine treatment on a multilayer film, including a tungsten film and a silicon oxide film, possible by controlling the etching rate and a fine treatment method using the same can be provided.

Abstract: Provided is a process for purifying a fluorine compound capable of yielding a highly pure fluorine compound by removing at least oxygen from a fluorine compound containing an oxygen compound as an impurity. In a process according to the present invention for purifying a fluorine compound, the following is brought into contact with the fluorine compound, which contains an oxygen compound as an impurity, thereby removing at least oxygen: carbonyl fluoride in an amount of a 0.1-fold equivalent or more and a 100-fold equivalent or less of oxygen atoms in the fluorine compound.