Abstract: a composition for film formation which can be cured in a short time period and give a film having a low dielectric constant and excellent in heat resistance, adhesion and cracking resistance, a polymer for use in the composition and a process for producing the polymer. The composition prepared by dissolving the polymer having specific repeating units in a solvent has excellent film-forming properties. The polymer has repeating units represented by the following general formula (1): wherein Z and Y are as defined hereinabove.

Abstract: a composition for film formation which can be cured in a short time period and give a film having a low dielectric constant and excellent in heat resistance, adhesion and cracking resistance, a polymer for use in the composition and a process for producing the polymer. The composition prepared by dissolving the polymer having specific repeating units in a solvent has excellent film-forming properties.

Abstract: A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for insulating film formation using the composition. The composition comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) compounds represented by the formula (1): R1aSi(OR2)4−a, and (A-2) compounds represented by the formula (2): R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c; and (B) a compound represented by the formula (3): R8O (CHCH3CH2O)eR9.