Abstract: Provided is an efficient method for attaching a tissue section. In the invention, one of problems is solved by changing attachment conditions of the tissue section depending on an organ from which the tissue section is derived. A technique of achieving good adhesiveness between a microscope slide and a section by introducing unevenness on a front surface of the microscope slide using reactive ion etching as one of the attachment conditions is provided. Further, a technique of optimizing the attachment of the section using a machine learning technique or the like is provided.

Abstract: To provide a head adjustment device, a head device, and a printing apparatus with which it is possible to perform automatic position adjustment of a head module in a head including one or more head modules. Provided is a head adjustment device (150) which adjusts a position of a head module in a head including one or more head modules, the head adjustment device (150) including an adjustment unit that includes an actuator that is connected to an adjustment member, which is operated in a case where the position of the head module is to be adjusted, and operates the adjustment member, a movement unit (248) that moves the adjustment unit relative to the head, and a movement control unit (244) that sets coordinates to be applied to the movement unit based on a reference position of the head module and moves the adjustment unit based on coordinate values of the adjustment member.

Abstract: A magnetic recording write head and system has a spin-torque oscillator (STO) located between the write head's write pole and trailing shield. The STO's ferromagnetic free layer is located near the write pole with a multilayer seed layer between the write pole and the free layer. The STO's nonmagnetic spacer layer is between the free layer and the STO's ferromagnetic polarizer. The polarizer may be the trailing shield of the write head, one or more separate polarizer layers, or combinations thereof. The STO electrical circuitry causes electron flow from the write pole to the trailing shield. The multilayer seed layer removes the spin polarization of electrons from the write pole, which enables electrons reflected from the polarizer layer to become spin polarized, which creates the spin transfer torque on the magnetization of the free layer. The multilayer seed layer includes a Mn or a Mn-alloy layer.

Abstract: To provide a head adjustment device, a head device, and a printing apparatus with which it is possible to perform automatic position adjustment of a head module in a head including one or more head modules. Provided is a head adjustment device (150) which adjusts a position of a head module in a head including one or more head modules, the head adjustment device (150) including an adjustment unit that includes an actuator that is connected to an adjustment member, which is operated in a case where the position of the head module is to be adjusted, and operates the adjustment member, a movement unit (248) that moves the adjustment unit relative to the head, and a movement control unit (244) that sets coordinates to be applied to the movement unit based on a reference position of the head module and moves the adjustment unit based on coordinate values of the adjustment member.

Abstract: A magnetic recording write head and system has a spin-torque oscillator (STO) located between the write head's write pole and trailing shield. The STO's ferromagnetic free layer is located near the write pole with a multilayer seed layer between the write pole and the free layer. The STO's nonmagnetic spacer layer is between the free layer and the STO's ferromagnetic polarizer. The polarizer may be the trailing shield of the write head, one or more separate polarizer layers, or combinations thereof. The STO electrical circuitry causes electron flow from the write pole to the trailing shield. The multilayer seed layer removes the spin polarization of electrons from the write pole, which enables electrons reflected from the polarizer layer to become spin polarized, which creates the spin transfer torque on the magnetization of the free layer. The multilayer seed layer includes a Mn or a Mn-alloy layer.

Abstract: A magnetic recording write head and system has a spin-torque oscillator (STO) located between the write head's write pole and trailing shield. The STO's ferromagnetic free layer is located near the write pole with a multilayer seed layer between the write pole and the free layer. The STO's nonmagnetic spacer layer is between the free layer and the STO's ferromagnetic polarizer. The polarizer may be the trailing shield of the write head, one or more separate polarizer layers, or combinations thereof. The STO electrical circuitry causes electron flow from the write pole to the trailing shield. The multilayer seed layer removes the spin polarization of electrons from the write pole, which enables electrons reflected from the polarizer layer to become spin polarized, which creates the spin transfer torque on the magnetization of the free layer. The multilayer seed layer includes a Mn or a Mn-alloy layer.

Abstract: A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic free layer near the substrate, a ferromagnetic polarizing layer and a nonmagnetic spacer layer between the free layer and the polarizing layer. A multilayer structure is located between the substrate and the free layer. The multilayer structure includes a metal or metal alloy seed layer for the free layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the free layer and thus reduces undesirable damping of the oscillation of the free layer's magnetization by the seed layer.

Abstract: A spin transfer torque (STT) device has a free ferromagnetic layer that includes a Heusler alloy layer and a template layer beneath and in contact with the Heusler alloy layer. The template layer may be a ferromagnetic alloy comprising one or more of Co, Ni and Fe and the element X, where X is selected from one or more of Ta, B, Hf, Zr, W, Nb and Mo. A CoFe nanolayer may be formed below and in contact with the template layer. The STT device may be a spin-torque oscillator (STO), like a STO incorporated into the write head of a magnetic recording disk drive. The STT device may also be a STT in-plane or perpendicular magnetic tunnel junction (MTJ) cell for magnetic random access memory (MRAM). The template layer reduces the critical current density of the STT device.

Abstract: A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic polarizer layer near the substrate, a ferromagnetic free layer, and a nonmagnetic spacer layer between the ferromagnetic polarizer layer and the ferromagnetic free layer. A multilayer structure is located between the substrate and the ferromagnetic polarizer layer. The multilayer structure includes a metal or metal alloy seed layer for the ferromagnetic polarizer layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the write pole and thus reduces undesirable spin pumping of the ferromagnetic polarizer layer.

Abstract: A detection apparatus that includes correlation processing systems that each find a correlation between a predetermined code sequence and a wave detection signal obtained by detecting a phase-modulated input wave at a frequency different from a frequency used by a different one of the correlation processing systems, and thereby generate a correlation signal, level reduction processors that each receive the correlation signal from a corresponding one of the plurality of correlation processing systems and reduce a level of the received correlation signal when the correlation signal is not to be used for detection of the target or do not reduce the level of the received correlation signal when the correlation signal is to be used for detection of the target, and a detector that detects at least presence or absence of the target based on the correlation signal processed by each of the plurality of level reduction processors.

Abstract: Spin transfer torque (STT) devices with multilayer seed layers that can be used in magnetic recording and memory are provided. One such STT device includes a substrate, and a stack of layers formed on the substrate, where the stack includes a first seed layer directly on the substrate and including Cr, a second seed layer on the first seed layer and including Ta, a ferromagnetic free layer on the second seed layer; a ferromagnetic polarizing layer, and a nonmagnetic spacer layer between the free layer and the polarizing layer. One such method includes fabricating the STT device.

Abstract: A spin transfer torque (STT) device has a free ferromagnetic layer that includes a Heusler alloy layer and a template layer beneath and in contact with the Heusler alloy layer. The template layer may be a ferromagnetic alloy comprising one or more of Co, Ni and Fe and the element X, where X is selected from one or, more of Ta, B, Hf, Zr, W, Nb and Mo. A CoFe nanolayer may be formed below and in contact with the template layer. The STT device may be a spin-torque oscillator (STO), like a STO incorporated into the write head of a magnetic recording disk drive. The STT device may also be a STT in-plane or perpendicular magnetic tunnel junction (MTJ) cell for magnetic random access memory (MRAM). The template layer reduces the critical current density of the STT device.

Abstract: A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic free layer near the substrate, a ferromagnetic polarizing layer and a nonmagnetic spacer layer between the free layer and the polarizing layer. A multilayer structure is located between the substrate and the free layer. The multilayer structure includes a metal or metal alloy seed layer for the free layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the free layer and thus reduces undesirable damping of the oscillation of the free layer's magnetization by the seed layer.

Abstract: A magnetic recording write head and system has a spin-torque oscillator (STO) located between the write head's write pole and trailing shield. The STO's ferromagnetic free layer is located near the write pole with a multilayer seed layer between the write pole and the free layer. The STO's nonmagnetic spacer layer is between the free layer and the STO's ferromagnetic polarizer. The polarizer may be the trailing shield of the write head or a separate polarizer layer. The STO electrical circuitry causes electron flow from the write pole to the trailing shield. The multilayer seed layer removes the spin polarization of electrons from the write pole, which enables electrons reflected from the polarizer layer to become spin polarized, which creates the spin transfer torque on the magnetization of the free layer. The multilayer seed layer includes Mn or a Mn-alloy layer between one or more metal or metal alloy films.

Abstract: A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic free layer near the substrate, a ferromagnetic polarizing layer and a nonmagnetic spacer layer between the free layer and the polarizing layer. A multilayer structure is located between the substrate and the free layer. The multilayer structure includes a metal or metal alloy seed layer for the free layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the free layer and thus reduces undesirable damping of the oscillation of the free layer's magnetization by the seed layer.

Abstract: A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic free layer near the substrate, a ferromagnetic polarizing layer and a nonmagnetic spacer layer between the free layer and the polarizing layer. A multilayer structure is located between the substrate and the free layer. The multilayer structure includes a metal or metal alloy seed layer for the free layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the free layer and thus reduces undesirable damping of the oscillation of the free layer's magnetization by the seed layer.

Abstract: A magnetic recording write head and system has a spin-torque oscillator (STO) located between the write head's write pole and trailing shield. The STO's ferromagnetic free layer is located near the write pole with a multilayer seed layer between the write pole and the free layer. The STO's nonmagnetic spacer layer is between the free layer and the STO's ferromagnetic polarizer. The polarizer may be the trailing shield of the write head or a separate polarizer layer. The STO electrical circuitry causes electron flow from the write pole to the trailing shield. The multilayer seed layer removes the spin polarization of electrons from the write pole, which enables electrons reflected from the polarizer layer to become spin polarized, which creates the spin transfer torque on the magnetization of the free layer. The multilayer seed layer includes Mn or a Mn-alloy layer between one or more metal or metal alloy films.

Abstract: A spin transfer torque (STT) device has a free ferromagnetic layer that includes a Heusler alloy layer and a template layer beneath and in contact with the Heusler alloy layer. The template layer may be a ferromagnetic alloy comprising one or more of Co, Ni and Fe and the element X, where X is selected from one or more of Ta, B, Hf, Zr, W, Nb and Mo. A CoFe nanolayer may be formed below and in contact with the template layer. The STT device may be a spin-torque oscillator (STO), like a STO incorporated into the write head of a magnetic recording disk drive. The STT device may also be a STT in-plane or perpendicular magnetic tunnel junction (MTJ) cell for magnetic random access memory (MRAM). The template layer reduces the critical current density of the STT device.

Abstract: Spin transfer torque (STT) devices with multilayer seed layers that can be used in magnetic recording and memory are provided. One such STT device includes a substrate, and a stack of layers formed on the substrate, where the stack includes a first seed layer directly on the substrate and including Cr, a second seed layer on the first seed layer and including Ta, a ferromagnetic free layer on the second seed layer; a ferromagnetic polarizing layer, and a nonmagnetic spacer layer between the free layer and the polarizing layer. One such method includes fabricating the STT device.

Abstract: A detection device includes: a first correlation circuit that computes correlation of a first wave detection signal, which is a phase-modulated input wave detected at determined frequency, with a determined code sequence for every code composing the determined code sequence, and to generate first correlation signals the number of which corresponds to a code sequence length, which is a length of the determined code sequence; and a control circuit that rotates phases of the first correlation signals, generates an added value by adding the phase-rotated first correlation signals, and determines based on the added value whether the phase-modulated input wave is a return wave from a determined object.