Abstract: The present invention relates to a solid-state imaging device, etc., which makes it possible to obtain an image with higher resolution by properly correcting pixel data even when any one of row selecting wirings is disconnected. A solid-state imaging device (1) comprises a photodetecting section (10), a signal reading-out section (20), a controlling section (30), and a correction processing section (40). In the photodetecting section (10), M×N pixel portions P1,1 to PM,N are two-dimensionally arrayed in a matrix of M rows and N columns, and each of the pixel portions P1,1 to PM,N includes a photodiode and a reading-out switch. Charges generated in each pixel portion Pm,n are inputted into an integrating circuit Sn through a reading-out wiring LO,n, and a voltage value corresponding to the amount of charges is outputted from the integrating circuit Sn. The voltage value from the integrating circuit Sn is outputted to an output wiring Lout through a holding circuit Hn.

Abstract: The present invention relates to a solid-state imaging device, etc., having a structure which enables to obtain an image with higher resolution by correcting pixel data even when any one of row selecting wirings is disconnected. A solid-state imaging device (1) comprises a photodetecting section (10), a signal reading-out section (20), a controlling section (30), and a correction processing section (40). The photodetecting section (10) has M×N pixel portions P1,1 to PM,N two-dimensionally arrayed in M rows and N columns, and each of the pixel portions P1,1 to PM,N includes a photodiode which generates charges of an amount corresponding to an incident light intensity and a reading-out switch connected to the photodiode. Charges generated in each of the pixel portions P1,1 to PM,N are inputted into an integrating circuit Sn through a reading-out wiring LO,n.

Abstract: Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.

Abstract: A solid state imaging device 1 includes a photodetecting section including M×N pixel portions P1,1 to PM,N two-dimensionally arrayed in M rows and N columns, a signal readout section including integrating circuits S1 to SN and holding circuits H1 to HN, and an initialization section including initialization switches SWI,1 to SWI,N. In response to a discharging control signal Reset, discharge switches SW2 in the integrating circuits Sn are temporarily closed and then opened, and thereafter, in response to an m-th row selecting control signal Vsel(m), the readout switches SW1 of the pixel portions Pm,n of the m-th row are closed for a first period. In this first period, in response to a hold control signal Hold, the input switches SW31 of the holding circuits Hn are switched from a closed state to an open state, and thereafter, in response to an initializing control signal Init, the initialization switches SWI,n are closed for a second period.

Abstract: A packet switching system capable of ensuring the sequence and continuity of packets and further compensating for delays in transmission is disclosed. Each of two redundant switch sections has a high-priority queue and a low-priority queue for each of output ports. A high-priority output selector selects one of two high-priority queues corresponding to respective ones of the two switch sections to store an output of the selected one into a high-priority output queue. A low-priority output selector selects one of two low-priority queues corresponding to respective ones of the two switch sections to store an output of the selected one into a low-priority output queue. The high-priority and low-priority output selectors are controlled depending on a system switching signal and a packet storing status of each of the high-priority and low-priority queues.

Abstract: A solid state imaging device 1 includes a photodetecting section 10, a signal readout section 20, a controlling section 30, and a correction processing section 40. In the photodetecting section 10, M×N pixel portions each including a photodiode which generates charges as much as an incident light intensity and a readout switch connected to the photodiode are two-dimensionally arrayed in M rows and N columns. Charges generated in each pixel portion Pm,n are input into an integration circuit Sn, through a readout wiring LO,n, and a voltage value output corresponding to the charge amount from the integration circuit Sn is output to an output wiring Lout through a holding circuit Hn. In the correction processing section 40, correction processing is performed for frame data repeatedly output from the signal readout section 20, and frame data after being subjected to the correction processing is output.

Abstract: A solid state imaging device 1 includes a photodetecting section 10, a signal readout section 20, a controlling section 30, and a correction processing section 40. In the photodetecting section 10, M×N pixel portions each including a photodiode which generates charges as much as an incident light intensity and a readout switch connected to the photodiode are two-dimensionally arrayed in M rows and N columns. Charges generated in each pixel portion Pm,n are input into an integration circuit Sn through a readout wiring LO,n, and a voltage value output corresponding to the charge amount from the integration circuit Sn is output to an output wiring Lout through a holding circuit Hn. In the correction processing section 40, correction processing is performed for frame data repeatedly output from the signal readout section 20, and frame data after being subjected to the correction processing is output.

Abstract: A packet switching system capable of ensuring the sequence and continuity of packets and further compensating for delays in transmission is disclosed. Each of two redundant switch sections has a high-priority queue and a low-priority queue for each of output ports. A high-priority output selector selects one of two high-priority queues corresponding to respective ones of the two switch sections to store an output of the selected one into a high-priority output queue. A low-priority output selector selects one of two low-priority queues corresponding to respective ones of the two switch sections to store an output of the selected one into a low-priority output queue. The high-priority and low-priority output selectors are controlled depending on a system switching signal and a packet storing status of each of the high-priority and low-priority queues.

Abstract: Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.

Abstract: A transmission device includes: a reproduction audio producing unit which produces reproduction audio; a continuous audio producing unit which produces continuous audio; a synthesized audio producing unit which synthesizes the reproduction audio and the continuous audio to produce synthesized audio; a capture audio data producing unit which captures the synthesized audio to produce capture audio data; and a transmitting unit which transmits the capture audio data to a reproduction device.

Abstract: For a solid-state image pickup device 1, a plurality of pixels are two dimensionally arranged in an imaging region 10, and two photodiodes PD1 and PD2 are included in each pixel Pm,n. An electric charge generated in the respective photodiodes PD1 and PD2 is input to a signal readout section 20, and a voltage according to an electric charge amount thereof is output from the signal output section 20. The voltage output from the signal readout section 20 is input to an A/D converting section 40, and a digital value according to the input voltage is output from the A/D converting section 40. In an adding section 50, a sum of digital values to be output from the A/D converting section 40 according to the amount of electric charge generated, for each pixel Pm,n of the imaging region 10, in the two respective photodiodes PD1 and PD2 included in the pixel is operated, and a digital value being a sum value thereof is output.

Abstract: Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.

Abstract: Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.

Abstract: An optical low pass filter (2) is formed, for example, by a birefringent plate so as to control the light beam separation width, thereby changing the cut-off frequency according to an imaging mode. The number of pixels of an imaging element (5) is set greater than the number of pixels corresponding to the dynamic image display resolution. In a still image capturing mode, the light beam separation width is set narrower so that the resolution of the imaging element (5) can be used as it is while suppressing generation of a false color to a certain degree. On the other hand, in a dynamic image capturing mode, the light beam separation width is set wider so that a high-frequency component corresponding to an unnecessary resolution component for an output image signal can be cut off and suppression of the false color can be performed strongly as compared to the still image capturing mode.

Abstract: A radiographic imaging apparatus 1 has a solid-state image sensor 11, a scintillator 21, and others. The solid-state image sensor 11 has a photosensitive section 13 and an amplification section 15, which are formed on one side of an Si substrate 12. The photosensitive section 13 includes a plurality of photodiodes 16 as photoelectric converters for photoelectric conversion, and these photodiodes 16 are arrayed in a two-dimensional pattern. The amplification section 15 amplifies outputs from the photodiodes 16 and outputs amplified signals. The scintillator 21 is arranged to cover a region where the photosensitive section 13 and the amplification section 15 are formed on the one side of Si substrate 12, and is formed directly on the region.

Abstract: Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.

Abstract: There is provided a solid-state imaging device with an improved linearity as well as dynamic range. Each pixel portion Pm,n in the solid-state imaging device includes: a buried photodiode PD for generating charges of an amount corresponding to the intensity of incident light; a capacitive element C connected in parallel to the buried photodiode PD to accumulate charges generated in the buried photodiode PD; an amplifying transistor T1 for outputting a voltage value corresponding to a voltage value input to the gate terminal; a transferring transistor T2 for inputting a voltage value corresponding to the amount of accumulated charges in the capacitive element C to the gate terminal of the amplifying transistor T1; a discharging transistor T3 for discharging the charges of the capacitive element C; and a selecting transistor T4 for selectively outputting a voltage value output from the amplifying transistor T1 to a wiring Ln.

Abstract: N+-type semiconductor regions 12d are formed on a front surface side of a p?-type layer 12c of a semiconductor substrate 12, and these n+-type semiconductor and p?-type semiconductor constitute photodiodes. A metal wire 14 electrically connected to an isolation region 12e is formed on a first insulating layer 13. The metal wire 14 is provided so that its edge covers pn junction portions (interfaces between p?-type layer 12c and n+-type semiconductor regions 12d) exposed on a light-incident surface of the semiconductor substrate 12 (p?-type layer 12c), above the pn junction portions, and is of grid shape. The metal wire 14 is grounded and the isolation region 12e is set at the ground potential.

Abstract: N+-type semiconductor regions 12d are formed on a front surface side of a p?-type layer 12c of a semiconductor substrate 12, and these n+-type semiconductor and p?-type semiconductor constitute photodiodes. A metal wire 14 connected to an isolation region 12e is formed on a first insulating layer 13. The metal wire 14 is provided so as to extend along a row direction and along a column direction between adjacent n+-type semiconductor regions 12d, and is of grid shape when viewed from a direction of incidence of light. Signal readout lines 53 are formed on a third insulating layer 16. The signal readout lines 53 are made of metal such as aluminum, are located above the n+-type semiconductor regions 12d when viewed from the direction of incidence of light, and are provided so as to extend along the column direction.

Abstract: A packet switch includes (a) a plurality of inputs into each of which a packet is input, (b) a switch which receives the packet from the input and switches an output through which the packet is transmitted, and (c) a scheduler which controls the switch. The scheduler (103) includes (c1) a shuffler (201) which shuffles an order of precedence in a first request transmitted from the input to transfer the packet, (c2) a schedule algorithm (202) which determines the output, based on the first request having the order of precedence having been shuffled by the shuffler, and produces a second request to transfer a packet which second request is associated with the first request having the order of precedence having been shuffled by the shuffler, and (c3) a re-shuffler (203) which turns an order of precedence of the second request to be identical with the order of precedence in the first request as found before having been shuffled by the shuffler, and returns the thus turned order of precedence back to the input.