Abstract: The semiconductor device of the present embodiment includes a lead frame having a projection portion, the projection portion having an upper face and a side face, a semiconductor chip provided above the projection portion, and a bonding material provided between the projection portion and the semiconductor chip, the bonding material being in contact with the upper face and the side face, the bonding material bonding the lead frame and the semiconductor chip.

Abstract: According to one embodiment, a semiconductor device includes: a substrate; a first MOSFET and a second MOSFET that are provided on a first surface of the substrate and have sources commonly coupled; a third MOSFET and a fourth. MOSFET that are provided on the first surface of the substrate and have sources commonly coupled; a light receiver that is provided on the first surface of the substrate and is coupled to the first MOSFET, the second MOSFET, the third MOSFET, and the fourth MOSFET; and a light emitter that is provided on the light receiver.

Abstract: According to one embodiment, a semiconductor device includes: a substrate that has a first surface extending in a first direction and a second direction; a first metal oxide semiconductor field effect transistor (MOSFET) that is provided on the first surface of the substrate; a support base that is provided above the first surface of the substrate and extends in a third direction intersecting the first direction and the second direction; a light receiving element that is in contact with a second surface of the support base facing the first direction; and a light emitting element that is in contact with a third surface of the light receiving element facing the first direction.

Abstract: According to one or more embodiments, a semiconductor device includes a mounting substrate and a semiconductor element on the mounting substrate. The mounting substrate has a first electrode pad and a second electrode pad. The semiconductor element has a supporting substrate, third and fourth electrode pads, first slits and second slits. The third and fourth electrode pads are provided on a first surface of the supporting substrate facing the mounting substrate. The first slits are provided both in the supporting substrate and in the third electrode pad. The second slits are provided both in the supporting substrate and in the fourth electrode pad. The semiconductor device further includes a first conductive bonding agent that connects the first electrode pad to the third electrode pad and a second conductive bonding agent that connects the second electrode pad to the fourth electrode pad.

Abstract: A semiconductor package includes a PDA chip, a MOS chip, and a wiring plate including a first principal surface and a second principal surface, the first principal surface being provided with a first rigid plate that is non-conductive and a second rigid plate that is conductive, the PDA chip being fixed to the first rigid plate by using a non-conductive bonding agent, a lower surface terminal of the MOS chip being soldered to the second rigid plate, the second principal surface being provided with an input terminal and an output terminal, the input terminal being electrically connected to the PDA chip, the output terminal being electrically connected to the second rigid plate.

Abstract: A semiconductor device includes an insulating member; a light-receiving element on a front surface of the insulating member; a light-emitting element on the light-receiving element; a first metal terminal electrically connected to the light-emitting element and provided on a back surface of the insulating member; a switching element mounted on the front surface via a metal pad, the switching element being electrically connected to the light-receiving element; and a second metal terminal provided on the back surface and electrically connected to the switching element via the metal pad. The insulating member has a first thickness in a first direction directed from the back surface toward the front surface. The metal pad has a second thickness in the first direction. The second metal terminal has a third thickness in the first direction. The first thickness is less than a combined thickness of the second and third thicknesses.

Abstract: According to one or more embodiments, a semiconductor device includes a mounting substrate and a semiconductor element on the mounting substrate. The mounting substrate has a first electrode pad and a second electrode pad. The semiconductor element has a supporting substrate, third and fourth electrode pads, first slits and second slits. The third and fourth electrode pads are provided on a first surface of the supporting substrate facing the mounting substrate. The first slits are provided both in the supporting substrate and in the third electrode pad. The second slits are provided both in the supporting substrate and in the fourth electrode pad. The semiconductor device further includes a first conductive bonding agent that connects the first electrode pad to the third electrode pad and a second conductive bonding agent that connects the second electrode pad to the fourth electrode pad.

Abstract: The semiconductor device of the present embodiment includes a lead frame having a projection portion, the projection portion having an upper face and a side face, a semiconductor chip provided above the projection portion, and a bonding material provided between the projection portion and the semiconductor chip, the bonding material being in contact with the upper face and the side face, the bonding material bonding the lead frame and the semiconductor chip.

Abstract: The semiconductor device of the present embodiment includes a lead frame having a projection portion, the projection portion having an upper face and a side face, a semiconductor chip provided above the projection portion, and a bonding material provided between the projection portion and the semiconductor chip, the bonding material being in contact with the upper face and the side face, the bonding material bonding the lead frame and the semiconductor chip.

Abstract: The semiconductor device of the present embodiment includes a lead frame having a projection portion, the projection portion having an upper face and a side face, a semiconductor chip provided above the projection portion, and a bonding material provided between the projection portion and the semiconductor chip, the bonding material being in contact with the upper face and the side face, the bonding material bonding the lead frame and the semiconductor chip.

Abstract: A semiconductor device of an embodiment includes a substrate including a semiconductor element, a first electrode on the substrate and electrically connected to the semiconductor element, a second electrode on the substrate and electrically connected to the semiconductor element, and a terminal spaced from the first electrode, the substrate, and the second electrode. A first bonding wire has a first bonding portion bonded to the second electrode at a first end and a second bonding portion bonded to the terminal at a second end. A second bonding wire has a third bonding portion bonded to the second electrode at a first end and a fourth bonding portion bonded to the terminal at a second end. Each of the first and second bonding wires comprise copper and have a diameter less than or equal to 100 ?m.

Abstract: A semiconductor device containing: a semiconductor element; a support substrate; an insulating material layer for sealing the semiconductor element and a periphery thereof; a metal thin film wiring layer provided in the insulating material layer, with a part thereof being exposed on an external surface; and metal vias provided in the insulating material layer and electrically connected to the metal thin film wiring layer. The semiconductor element is provided in a plurality of units and the respective semiconductor elements are stacked via an insulating material such that a circuit surface of each semiconductor element faces the metal thin film wiring layer, and electrode pads of each semiconductor element are exposed without being hidden by the semiconductor element stacked thereabove.

Abstract: A semiconductor device containing: a semiconductor element; a support substrate; an insulating material layer for sealing the semiconductor element and a periphery thereof; a metal thin film wiring layer provided in the insulating material layer, with a part thereof being exposed on an external surface; and metal vias provided in the insulating material layer and electrically connected to the metal thin film wiring layer. The semiconductor element is provided in a plurality of units and the respective semiconductor elements are stacked via an insulating material such that a circuit surface of each semiconductor element faces the metal thin film wiring layer, and electrode pads of each semiconductor element are exposed without being hidden by the semiconductor element stacked thereabove.

Abstract: The bonding method for fanning a bump on an electrode on a substrate through bonding, includes: making a data storage part store a bonding position coordinate and an assumed bump-bonding area at the bonding position coordinate; recognizing a bondable area of the electrode by shooting an image of the electrode and processing the image; calculating overlap rate between the recognized bondable area and the assumed bump-bonding area stored in the data storage part; determining whether or not the calculated overlap rate is equal to or greater than a set value; and performing bonding on the bonding position coordinate when the overlap rate is determined to be equal to or greater than the set value. The bonding can be performed without being affected by the quality of finish of the electrode pads, and it is possible to avoid a bonding failure at flip-chip bonding and the like.

Abstract: A process for producing Ti, comprising a reduction step of reacting TiCl4 with Ca in a CaCl2-containing molten salt having the Ca dissolved therein to thereby form Ti particles, a separation step of separating the Ti particles formed in said molten salt from said molten salt and an electrolysis step of electrolyzing the molten salt so as to increase the Ca concentration, wherein the molten salt increased in Ca concentration in the electrolysis step is introduced into a regulating cell to thereby render the Ca concentration of the molten salt constant and thereafter the molten salt is used for the reduction of TiCl4 in the reduction step. In the present invention, the Ca concentration of the molten salt to be fed to the corresponding reduction vessel can be inhibited from fluctuating and, at the same time, can maintain high concentration levels. Further, a large volume of the molten salt can be treated continuously.

Abstract: The present invention is a method for producing Ti or a Ti alloy through reduction of TiCl4 by Ca, which can produce the high-purity metallic Ti or high-purity Ti alloy. A molten salt containing CaCl2 and having Ca dissolved therein is held in a reactor vessel, and a metallic chloride containing TiCl4 is reacted with Ca in the molten salt to generate Ti particles or Ti alloy particles in a molten CaCl2 solution, which allows enhancement of a feed rate of TiCl4 which is of a raw material of Ti, and also allows a continuous operation. Therefore, the high-purity metallic Ti or the high-purity Ti alloy can economically be produced with high efficiency. Further, the method by the present invention eliminates the need of replenishment of expensive metallic Ca and of the operation for separately handling Ca which is highly reactive and difficult to handle.

Abstract: The present invention provides a method for electrolyzing molten salt that can enhance the concentration of metal-fog forming metal in the molten salt by carrying out the electrolysis under conditions that the molten salt containing the chloride of metal-fog forming metal is supplied from one end of an electrolytic cell to a space between an anode and a cathode in a continuous or intermittent manner to provide a flow rate in one direction to the molten salt in the vicinity of the surface of the cathode and thus to allow the molten salt to flow in one direction in the vicinity of the surface of the cathode. According to the present invention, while high current efficiency is maintained, only the molten salt enriched with metal-fog forming metal such as Ca can be effectively taken out. Further, this method can easily be carried out by using the electrolytic cell according to the present invention.

Abstract: In producing Ti or a Ti alloy through reduction by Ca, an electrolytic-bath salt taken out from a reduction process is electrolyzed to recover Ca and the electrolytic-bath salt as a solid substance, and the recovered Ca and electrolytic-bath salt are delivered to the reduction process. Therefore, heat generation is suppressed in the reduction process by utilizing latent heat of fusion possessed by the solid substance, thereby largely improving production efficiency and thermal efficiency. Additionally, a reaction temperature is easily controlled, and a raw-material loading rate can be enhanced to efficiently produce Ti or the Ti alloy. At this point, using a pulling electrolysis method of the invention, the solid-state Ca and electrolytic-bath salt can be obtained at a low voltage and high current efficiency, i.e., with the relatively small power consumption.

Abstract: A TiCl4 gas is supplied to a molten CaCl2 liquid held in a reactor vessel 6 through a raw material feed pipe 11, TiCl4 is reduced to produce granular metallic Ti by Ca melted in the CaCl2 liquid. The molten CaCl2 liquid in which Ti granules taken out downward from the reactor vessel 6 is mixed is delivered to a separation process 12, the molten CaCl2 liquid is heated in a heating vessel 15, and separation is generated by a difference in specific gravity, whereby the molten CaCl2 liquid 16 is located in an upper layer while a metallic Ti 17 is located in a lower layer. The metallic Ti 17 in the lower layer is taken out from a high-melting-point metal discharge port 18, and the metallic Ti 17 is solidified to yield an ingot. The molten CaCl2 liquid 16 in the upper layer is delivered to an electrolysis process 13 along with the molten CaCl2 liquid taken out from the reactor vessel 6, and Ca generated by the electrolysis and CaCl2 are returned into the reactor vessel 6.

Abstract: An apparatus for producing Ti by Ca reduction by the invention includes a reaction tank retaining a molten salt in which a molten salt CaCl2 is contained and Ca is dissolved, an electrolytic cell retaining a molten salt containing CaCl2, and a continuum body which is movably constructed while part of the continuum body is immersed in the molten salt either within the reaction tank or electrolytic cell. In the inventive method for producing Ti by Ca reduction, the molten salt in the electrolytic cell is electrolyzed to generate Ca on the cathode side which is transported to the reaction tank while deposited on and adheres to the continuum body, and TiCl4 is supplied to the reaction tank to generate Ti.