Abstract: To increase an output from a magnetoresistive element without using a special magnetic material, provided is a magnetic detection device including a magnetoresistive element including a ferromagnetic reference layer having a fixed magnetization direction, to which a spin wave induction layer is connected, so that the spin wave induction layer injects, into the ferromagnetic reference layer, electrons having spins in a specific direction by a spin electromotive force internally generated.

Abstract: To increase an output from a magnetoresistive element without using a special magnetic material, provided is a magnetic detection device including a magnetoresistive element including a ferromagnetic reference layer having a fixed magnetization direction, to which a spin wave induction layer is connected, so that the spin wave induction layer injects, into the ferromagnetic reference layer, electrons having spins in a specific direction by a spin electromotive force internally generated.

Abstract: A magnetic sensor reduces thermal fluctuation and realizes high-sensitive signal detection using a spin Hall device of a simple structure configured with only one magnetic layer. The magnetic sensor includes a stacked film in which a nonmagnetic spin Hall layer, a nonmagnetic insulator layer, and a magnetic layer are stacked, an electrode nonmagnetic terminal pair connected to a side surface of the nonmagnetic spin Hall layer, and a unit applying a current in a film thickness direction of the stacked film. A thickness of the nonmagnetic spin Hall layer is thinner than twice a spin diffusion length of a material constituting the nonmagnetic spin Hall layer. A magnetization direction of the magnetic layer magnetized by an external magnetic field is detected due to the polarity of a voltage across both ends of the electrode nonmagnetic terminal pair.

Abstract: The present invention aims to reduce heat fluctuations of a memory cell and thereby provide a stable writing operation when a magnetization reversal process not involving a reversal magnetic field is used for writing into the memory cell. The magnetic memory cell has a structure where first and second magnetization pinned terminals are connected, with a space therebetween, to one surface of a non-magnetic region, and a magnetization free terminal is connected to the other surface. Magnetization directions of the first and second magnetization pinned terminals are anti-parallel to each other. Writing is performed by controlling a polarity of a current flowing between the first and second magnetization pinned terminals through the non-magnetic region and thus reversing magnetization of the magnetization free terminal.

Abstract: A magnetic sensor reduces thermal fluctuation and realizes high-sensitive signal detection using a spin Hall device of a simple structure configured with only one magnetic layer. The magnetic sensor includes a stacked film in which a nonmagnetic spin Hall layer, a nonmagnetic insulator layer, and a magnetic layer are stacked, an electrode nonmagnetic terminal pair connected to a side surface of the nonmagnetic spin Hall layer, and a unit applying a current in a film thickness direction of the stacked film. A thickness of the nonmagnetic spin Hall layer is thinner than twice a spin diffusion length of a material constituting the nonmagnetic spin Hall layer. A magnetization direction of the magnetic layer magnetized by an external magnetic field is detected due to the polarity of a voltage across both ends of the electrode nonmagnetic terminal pair.

Abstract: The present invention aims to reduce heat fluctuations of a memory cell and thereby provide a stable writing operation when a magnetization reversal process not involving a reversal magnetic field is used for writing into the memory cell. The magnetic memory cell has a structure where first and second magnetization pinned terminals are connected, with a space therebetween, to one surface of a non-magnetic region, and a magnetization free terminal is connected to the other surface. Magnetization directions of the first and second magnetization pinned terminals are anti-parallel to each other. Writing is performed by controlling a polarity of a current flowing between the first and second magnetization pinned terminals through the non-magnetic region and thus reversing magnetization of the magnetization free terminal.

Abstract: Magnetoresistive devices with increased response sensitivity to external magnetic fields and an increased magnetoresistive ratio (MR ratio) to cope with rapid advances made in a highdensity magnetic recording device. A patterned dielectric layer is laminated in a flat shape on a substrate capable of being doped with carriers (holes) in an electric field, and an FET structure with gate electrodes is then fabricated on that dielectric layer, and the substrate spatially modulated by applying a nonuniform electrical field to induce a first ferromagnetic domain, a nonmiagnetic domain and a second ferromagnetic domain.

Abstract: A rechargeable lithium battery includes an anode doped with lithium ions in an amount corresponding to the irreversible capacity. The anode is produced by applying lithium ions to an anodic active carbonaceous material. The anode may be produced by applying a slurry of the anodic active material composition containing a carbonaceous material to an anodic collector, drying and compression-molding the resulting article, and applying lithium ions to the molded article. Alternatively, the lithium-doped anode may be produced by applying lithium ions in the production of a carbonaceous material to yield a carbonaceous material containing lithium ions, and mixing the same with a carbonaceous material containing no lithium ions. The resulting rechargeable lithium battery using, for example, amorphous carbon as an anodic active material and a lithium transition metal compound as a cathodic active material shows a reduced irreversible capacity.

Abstract: Magnetoresistive devices with increased response sensitivity to external magnetic fields and an increased magnetoresistive ratio (MR ratio) to cope with rapid advances made in a high-density magnetic recording device. A patterned dielectric layer is laminated in a flat shape on a substrate capable of being doped with carriers (holes) in an electric field, and an FET structure with gate electrodes is then fabricated on that dielectric layer, and the substrate spatially modulated by applying a non-uniform electrical field to induce a first ferromagnetic domain, a nonmagnetic domain and a second ferromagnetic domain.

Abstract: In place of a magnetic field in which it is difficult to write onto and read a hard disk at high density, there is provided an information storage apparatus capable of writing and reading by means of a metal probe which applies a voltage to a thin film structure in a non contact manner to change the relative magnetization direction in the thin film layers to store information. Changes in a tunnel current between the thin film layers is then used to detect the relative magnetization direction and to read the stored information. At least a three-layer thin film structure including a magnetic metallic layer, a non-magnetic metallic layer and a magnetic metallic layer may be formed. A metal probe is brought close to the surface of this multilayer film at distance on the order of one nanometer.

Abstract: Disclosed is a magnetoresistance device which uses a ferromagnetic tunnel junction formed by inserting an insulating layer between two ferromagnetic layers and whose application to a magnetic head and a magnetoresistance memory is promising. The magnetoresistance device has a multilayer structure which has a ferromagnetic tunnel junction formed by lamination of a first ferromagnetic layer, an insulating layer and a second ferromagnetic layer, and in which at least one of the first and second ferromagnetic layers is a half-metallic ferromagnet formed of a material having such an electronic structure that one spin having a metallic band near Fermi energy has a gap at a level of higher energy than the Fermi energy and the other spin has a metallic band at the same level.

Abstract: A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (14) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

Abstract: A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (14) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

Abstract: A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (14) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

Abstract: A ferromagnetic fine line has no loss of spontaneous magnetization even when fabricated ultra-small. The magnetization can be controlled by the proximity of the electrodes and the atomic level structure, and is protected from adsorption of impurities by embedding the ferromagnetic fine line in a nonmagnetic atomic layer.

Abstract: A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or and the third atom or molecule, a chemical bond (14) is formed between the second atom and the third atom or molecule, a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom.

Abstract: A fluorocopolymer is produced by copolymerizing a fluoroolefin and cyclohexyl vinyl ether in the presence of a polymerization initiator at -30.degree. to +150.degree. C. at a molar ratio of the fluoroolefin to cyclohexyl vinyl ether in charge of 95:5 to 5:95.

Abstract: Transparency of an ethylene-tetrafluoroethylene type copolymer is improved by an addition of at least one condensed ring compound selected from the group consisting of anthracenes, phenanthrenes, anthraquinones phenanthrenequinones and substituted derivatives thereof.

Abstract: Ethylene-tetrafluorethylene copolymer compositions are stabilized against thermal degradation by incorporating therein a small amount of a copper compound.