Abstract: The present invention relates to a semiconductor manufacturing member including a silicon carbide-containing boron carbide film at least on a surface thereof, in which the silicon carbide-containing boron carbide film has a content of silicon carbide of 5 wt % or more and 18 wt % or less and a balance being boron carbide.

Abstract: A micro channel structure body 10 in which a micro channel 3 having a predetermined cross-sectional shape is formed in a laminate where substrates 1a, 1b, and 1c having formed thereon electrodes 2a, 2b, and 2c made of a thin film are laminated sequentially. The above-mentioned micro channel 3 is formed in a perpendicular direction ? perpendicular to a lamination direction ? of the above-mentioned laminate. Inner surfaces 3a and 3b of the above-mentioned micro channel 3 have an acute angle ? with respect to the lamination direction ? of the above-mentioned laminate. The above-mentioned plurality of electrodes 2a, 2b, and 2c are formed and exposed in the lamination direction ? of the inner surfaces 3a and 3b of the above-mentioned micro channel 3.

Abstract: A micro channel structure body 10 in which a micro channel 3 having a predetermined cross-sectional shape is formed in a laminate where substrates 1a, 1b, and 1c having formed thereon electrodes 2a, 2b, and 2c made of a thin film are laminated sequentially. The above-mentioned micro channel 3 is formed in a perpendicular direction ? perpendicular to a lamination direction ? of the above-mentioned laminate. Inner surfaces 3a and 3b of the above-mentioned micro channel 3 have an acute angle ? with respect to the lamination direction ? of the above-mentioned laminate. The above-mentioned plurality of electrodes 2a, 2b, and 2c are formed and exposed in the lamination direction ? of the inner surfaces 3a and 3b of the above-mentioned micro channel 3.

Abstract: A plasma resistant member has a base material and a coating layer made of an Y2O3, the coating layer being formed on a surface of the base material. The coating layer has a thickness of 10 ?m or more and the Y2O3 of the coating layer contains solid solution Si ranging from 100 ppm to 1000 ppm.

Abstract: The present invention concerns a plasma resistant member comprising Y2O3 or YAG thermal performed thermal spray on an alumina base material, wherein the surface roughness Ra of the alumina base material is 5 ?m or more and 15 ?m or less. By rendering the surface layer of the alumina base material porous to a porosity of 20% or more and 60% or less to a depth of ranging from 10 ?m to 1O0 ?m, aplasma resistant member having an enhanced adhesion strength can be provided. The aforementioned plasma resistant member can be produced by subjecting the surface of analumina base material to chemical etching, and then performing thermal spray Y2O3 or YAG on the roughened surface of the alumina base material to form a plasma resistant layer.

Abstract: A plasma resistant member has a base material and a coating layer made of an Y2O3, the coating layer being formed on a surface of the base material. The coating layer has a thickness of 10 ?m or more and the Y2O3 of the coating layer contains solid solution Si ranging from 100 ppm to 1000 ppm.

Abstract: The ceramic member of this invention is formed on the surfaces of crystal grains with a plurality of protrusions having smaller diameter than that of the crystal grain, said crystal grain composing at least the surface or its vicinity of a dense ceramic base material of purity being 95 wt % or higher. Such ceramic members may be produced by performing the surface of a dense ceramic base material with a corrosion treatment in an acid etchant, the dense ceramic base material having purity of 95 wt % or higher and exceeding 90% of a theoretical density, whereby ceramic grains existing on the surface or its vicinity of the base material are formed on the surface thereof with a plurality of protrusions.

Abstract: The ceramic member of this invention is formed on the surfaces of crystal grains with a plurality of protrusions having smaller diameter than that of the crystal grain, said crystal grain composing at least the surface or its vicinity of a dense ceramic base material of purity being 95 wt % or higher. Such ceramic members may be produced by performing the surface of a dense ceramic base material with a corrosion treatment in an acid etchant, the dense ceramic base material having purity of 95 wt % or higher and exceeding 90% of a theoretical density, whereby ceramic grains existing on the surface or its vicinity of the base material are formed on the surface thereof with a plurality of protrusions.

Abstract: A carbon heater comprising heater members (11, 111, 121 . . . 161, 212, 222, 315, 325 . . . 345, 411, 515, 612) in which a plurality of carbon fiber bundles having a plurality of carbon fibers whose diameter is 5 to 15 .mu.m bundled are woven into a longitudinally elongated shape such as a wire shape or a tape shape and the impurity content is less than 10 ppm in ashes.

Abstract: A vapor phase growth unit for vapor phase growing on the surface of a wafer under a heated condition, which supports the wafer with a wafer supporter within a reaction chamber and has a heater under the wafer supported by said wafer supporter, wherein a reflection plate for reflecting at least downward heat from said heater is provided, an insulation cylinder is provided surrounding the side periphery of the heater, and the reflection plate consists of vitreous carbon.

Abstract: A disc-shaped electrode plate body is made of high-purity glassy carbon and has a large number of very-small-diameter through holes each of which has a plurality of spherical recesses in its internal wall surface.