Abstract: In a manufacturing step for forming an organic EL element, the organic EL element is provided so as to have an anode and a cathode with a luminescent layer having an organic luminescent material interposed therebetween. Then, an aging treatment is performed. In the aging treatment, a curve of change in luminance with time is measured in driving the organic EL element at constant current. Then, the curve of change in luminance with time is divided into a component having a slowest luminance age-deterioration rate and other components by analyzing the curve and forming a fitting curve having a plurality of members that is fitted to the curve of change in luminance with time. Moreover, the aging treatment is conducted until a luminance of the element becomes approximately equal to an initial value A1 of the component having a slowest luminance age-deterioration rate.

Abstract: An organic EL element has an anode, a cathode, and one or more organic compound layers sandwiched between the anode and cathode, wherein at least one layer of said organic compound layers includes an organic compound denoted by chemical formula (1), which is more specifically denoted by chemical formulas (2)-(5). By introducing desired substituents at R1-R4, these compounds can be made to demonstrate hole transport function, emissive function, electron transport function, or a combination of those functions. Due to its tendency to be structurally non-planar, the organic compound does not crystallize easily, and has a high glass transition temperature. Use of such a compound in an organic EL element enhances element life.

Abstract: In a method of manufacturing a semiconductor device, after performing ion-implantation and before forming an oxide film, a silicon substrate is disposed within a furnace to undergo a heat treatment at a temperature equal to or higher than 950° C. for a specific time period (equal to or longer than 15 minutes). When performing the heat treatment and when raising a temperature up to the heat treatment temperature, oxygen is supplied together with nitrogen gas (inert gas). A supply amount of oxygen is controlled to be equal to or less than 5% when raising the temperature up to the heat treatment temperature, and to be equal to or less than 2% when performing the heat treatment. After the heat treatment, the oxidation film is formed. As a result, crystal defects (OSFs) are prevented from being produced on the silicon substrate surface.

Abstract: A cylinder minimizes the friction between an inner peripheral surface of a cylinder bore and a piston by substantially providing no plating on a portion of the inner peripheral surface of the cylinder bore where a cross sectional configuration of the inner periphery of the cylinder bore is prone to deform and which does not interfere with a predetermined operation performed in cooperation with a piston that reciprocates in slidable contact with the inner peripheral surface of the cylinder bore.

Abstract: A birefringent plate comprising a transparent substrate and an obliquely evaporated film formed on the transparent substrate, is free from the visual angle dependence because the obliquely evaporated film is formed into a multilayer composition and the neighboring layers have a different evaporation direction. Moreover, a manufacturing method for the birefringent plate, using a device constituted of a vacuum chamber and a crucible having a large number of inclined through holes, is capable of making the film thickness of the obliquely evaporated film uniform.