Abstract: The object of the present invention is to provide: an etching agent for a titanium-based metal on a semiconductor substrate, which suppresses decomposition of hydrogen peroxide, has a long liquid service life, and has less need for controlling the concentration of hydrogen peroxide in the etching agent, even in the cases where the etching agent is used for a semiconductor substrate having the titanium-based metal and a metallic copper or a metal alloy; an etching method; and an etching agent preparation liquid for use by mixing with hydrogen peroxide.

Abstract: The object of the present invention is to provide: an etching agent for a titanium-based metal on a semiconductor substrate, which suppresses decomposition of hydrogen peroxide, has a long liquid service life, and has less need for controlling the concentration of hydrogen peroxide in the etching agent, even in the cases where the etching agent is used for a semiconductor substrate having the titanium-based metal and a metallic copper or a metal alloy; an etching method; and an etching agent preparation liquid for use by mixing with hydrogen peroxide.

Abstract: It is the object of the present invention to provide an alkali etching solution for solar cell manufacturing, which is capable of forming uniformly a fine hubbly structure throughout a whole wafer on the surface of a wafer having a silicon as a main component, and still more is applicable to various wafers; and a method for manufacturing a silicon-based substrate for solar cell manufacturing, using the etching solution.

Abstract: The present invention is directed to provide a resist remover composition for semiconductor substrate which enables to remove a resist simply and easily in the photolithography process in the semiconductor field, and a method for removing a resist comprising that the composition is used. The present invention relates to a resist remover composition for semiconductor substrate, comprising [I] a carbon radical generating agent, [II] an acid, [III] a reducing agent, and [IV] an organic solvent, and having pH of lower than 7, and a method for removing a resist, comprising that the composition is used.

Abstract: The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film.

Abstract: A cleaning agent for a substrate having a copper wiring consisting of an aqueous solution comprising [I] an amino acid represented by the following general formula [1], and [II] an alkylhydroxylamine; and a method for cleaning a semiconductor substrate having a copper wiring characterized by using the relevant cleaning agent for a substrate having a copper wiring; (wherein R1 represents a hydrogen atom, a carboxymethyl group or a carboxyethyl group; and R2 and R3 each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, which may have a hydroxyl group, provided that those where R1 to R3 are all hydrogen atoms are excluded.).

Abstract: The purpose of the present invention to provide: a composition which can be used for water-repellent treating of the entire surface of a semiconductor substrate having a pattern formed by laminating a Si-containing insulating layer and a metal layer, at one time; and a method for water-repellent treatment of the semiconductor substrate surface using the composition. The present invention relates to: (1) a composition for water-repellent treatment of a semiconductor substrate surface comprising a) at least one kind of a compound selected from the group consisting of a long-chain alkyl tertiary amine and a long-chain alkyl ammonium salt, b) a base or an acid generating agent, having a condensed ring structure or forming a condensed ring structure by generating a base or an acid and c) a polar organic solvent, and (2) a method for water-repellent treatment of the semiconductor substrate surface having the pattern formed by laminating the Si-containing insulating layer and the metal layer, using the composition.

Abstract: The present invention is directed to provide a resist remover composition for semiconductor substrate which enables to remove a resist simply and easily in the photolithography process in the semiconductor field, and a method for removing a resist comprising that the composition is used. The present invention relates to a resist remover composition for semiconductor substrate, comprising [I] a carbon radical generating agent, [II] an acid, [III] a reducing agent, and [IV] an organic solvent, and having pH of lower than 7, and a method for removing a resist, comprising that the composition is used.

Abstract: The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film.

Abstract: Provided are: a safe, low-cost method of producing a polycrystalline silicon substrate excellent in photoelectric conversion efficiency by which a uniform, fine uneven structure suited to a solar cell can be simply formed on the surface of the polycrystalline silicon substrate; and a polycrystalline silicon substrate having a uniform, fine, pyramid-shaped uneven structure so that its reflectance can be significantly reduced. The uneven structure is formed on the surface of the polycrystalline silicon substrate by etching the polycrystalline silicon substrate with an alkaline etching solution containing at least one kind selected from the group consisting of a carboxylic acid having 1 or more and 12 or less carbon atoms and each having at least one carboxyl group in one molecule, and salts of the acids.

Abstract: Disclosed are an etching solution for a substrate and a substrate-etching method, which can prevent the contamination of a substrate, particularly a semiconductor substrate, with metal impurities. The etching solution comprises a dicarboxylic acid represented by the general formula (1) or a salt thereof and 20% (W/W) or more of an alkali metal hydroxide. The substrate-etching method comprises the step of etching a substrate with said etching solution.

Abstract: A semiconductor surface cleaning agent containing a compound the molecule of which has a nitrogen atom having an unshared electron pair and used for cleaning the surface of a semiconductor on which copper wiring is provided, and a method for cleaning the surface of a semiconductor characterized by treating the surface of a semiconductor on which copper wiring is provided with such a cleaning agent. The cleaning agent does not corrode the copper wiring (copper thin film) on the semiconductor and SiO2 of the interlayer insulating film, does not impair the flatness of the surface, and is effective in removing CuO and particles adhering to the surface of the Cu-CMP step.

Abstract: The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film.

Abstract: This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same.

Abstract: This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. The said cleaning agent and the method have made it possible to control a speed of etching on silicone oxide so as to remove impurities adsorbed on copper wirings and silicone oxide on a surface of a semi-conductor substrate having copper wirings on its surface, such as copper oxides and particles, without causing corrosion or oxidation of copper wirings nor causing roughness on the surface.

Abstract: A semiconductor surface cleaning agent containing a compound the molecule of which has a nitrogen atom having an unshared electron pair and used for cleaning the surface of a semiconductor on which copper wiring is provided, and a method for cleaning the surface of a semiconductor characterized by treating the surface of a semiconductor on which copper wiring is provided with such a cleaning agent The cleaning agent does not corrode the copper wiring (copper thin film) on the semiconductor and SiO2 of the interlayer insulating film, does not impair the flatness of the surface, and is effective in removing CuO and particles adhering to the surface at the Cu-CMP step.

Abstract: This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. The said cleaning agent and the method have made it possible to control a speed of etching on silicone oxide so as to remove impurities adsorbed on copper wirings and silicone oxide on a surface of a semi-conductor substrate having copper wirings on its surface, such as copper oxides and particles, without causing corrosion or oxidation of copper wirings nor causing roughness on the surface.

Abstract: Removing particles and metallic contaminants without corrosing the metallized wirings and without giving adverse effect of planarization on the semiconductor substrate surface can be effectively achieved by use of a cleaning agent which comprises an organic acid having at least one carboxyl group and a complexing agent having chelating ability.

Abstract: Removing particles and metallic contaminants without corrosing the metallized wirings and without giving adverse effect of planarization on the semiconductor substrate surface can be effectively achieved by use of a cleaning agent which comprises an organic acid having at least one carboxyl group and a complexing agent having chelating ability.

Abstract: This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same.