Abstract: An electrophotographic photoconductor comprises:(a) a conductive substrate; and(b) a photoconductive film on said conductive substrate, with the photoconductive film comprising at least one charge generation agent, at least one charge transport agent, and at least one furan derivative or thiophene derivative, the furan or thiophene derivative having the general formula: ##STR1## or ##STR2##

Abstract: The present invention provides a seleniumn electrophotographic photoreceptor comprising a laminate of a conductive base, a carrier transportaion layer consisting of amorphous selenium or an amorphous Se-Te alloy, a carrier generation layer consisting of an amorphous Se-Te alloy containing 20 to 50 wt % of Te, and an overcoat layer composed of two layers consisting of Se-As alloys having different arsenic concentrations and different thickenesses. In one embodiment of the invention, the lower overcoat layer contains 2-10% by weight arsenic while the upper overcoat layer contains 10-30% by weight arsenic. In another embodiment of the invention, the thickness of the upper overcoat layer is greater than that of the lower overcoat layer but not more than 8 .mu.m.

Abstract: A photoconductor for electrophotography has a unique electron injection-limiting layer of either pure selenium or a selenium-arsenic alloy containing less than 10 weight % arsenic formed between the carrier generation layer and the surface protective layer, which suppresses the transfer of electrons to the surface protective layer and prevents a drop in the electrostatic surface potential.