Abstract: This invention provides methods of supplying informations for fortunetelling wherein a user can receive useful informations by accessing a fortunetelling site. A server delivers the fortune information to a client based on the presetting of the delivery at a fixed time everyday, the delivery at every hour, the delivery when the user's biorhythm is low, and the delivery when the fortune result is ill or good. When the delivery time is decided a computer calculates the fortune result out and the server delivers the result. When the delivery time is not decided the computer is preset to perform a fortunetelling and to calculate the fortune result where the computer judges good or ill result of the fortunetelling and thus the server delivers the fortune result in compliance with the judgement of the computer.

Abstract: An apparatus and a method for correcting image data detected by an image sensor with less used memory space and fewer arithmetic operation executions is provided for. A data correcting apparatus of the present invention comprises an operation memory for storing expansion coefficient array data and basis function array data, which includes data of expansion coefficients and function values of a basis function for orthogonally expanding a high order polynomial for correcting input image data; and an operation part for correcting the input image data using the expansion coefficient array data and the basis function array data. With the use of the apparatus, the processing time of the operation part can also be minimized.

Abstract: An input image processing apparatus includes a FIFO memory (FIFO-S) in which region selection information for specifying a selected region in an input image frame, in order to consecutively store in an image memory pixel data within a selected region in an arbitrary shape defined on the image frame. The FIFO memory provides a signal for indicating write of pixel data included in the selected region into the image memory, based on the region selection information.

Abstract: Provided are an image processing method employing pattern matching, whereby the number of calculations for a normalized correlation factor can be reduced and processing speed can be increased in a pattern matching process, and an image processing system therefor. In the pattern matching processing when an insensitive region is set in a template image, values (the sum and the squared sum) obtained during a previous operation for a prior search target sub-image are employed to perform calculations for a current search target sub-image, relative to coordinate sequence code that indicates the start point and the end point of a sequence of pixels having values of "1.

Abstract: A compound semiconductor luminescent device is disclosed which comprises a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer, a luminescent layer, and a current injection layer, wherein the substrate and the layers are made of at least one kind of II-VI group compound semiconductor.

Abstract: An electroluminescent device of compound semiconductor includes a compound semiconductor substrate having at least one through-hole, an electroluminescent part consisting of a plurality of epitaxial compound semiconductor layers formed on the substrate, and at least a pair of electrodes having external leads in which one electrode is connected to the uppermost layer of the electroluminescent part and another electrode is directly connected to the lowest layer of the electroluminescent part through the through-hole of the substrate. Thereby, a voltage from an external source is enabled to be directly applied to the electroluminescent part.

Abstract: A method for fabricating a semiconductor thin film is disclosed. The method includes the step of epitaxially growing a semiconductor layer made of a group II-VI compound semiconductor to have a thickness of at least one atomic layer or more, on a main plane of a single-crystal semiconductor substrate, the semiconductor substrate having one of a diamond structure and a zinc blende structure, the main plane being inclined by an angle in the range of 2 to 16 degrees with respect to a (100) plane.

Abstract: A semiconductor waveguide structure of the II-VI group compound semiconductor made of the II group element and the VI group element. The waveguide structure includes a waveguide layer and clad layers which puts the waveguide layer therebetween. The waveguide layer has a refractive index larger than a refractive index of each clad layer. At least one of the clad layers contains the element Cd. With such an arrangement, the refractive index of one clad layer is established to be different from that of the other clad layer. In such a case, it is preferable that the semiconductor waveguide structure comprises at least two waveguide layers which are adjacent to each other and that the structure has either one of the features as follows: each refractive index of the waveguide layers varies stepwise at each boundary surface of the layers; the refractive index of at least one of the waveguide layers varies so as to be inclined; and super lattice layers are formed between the clad layer and the waveguide layers.

Abstract: A luminescent material capable of emitting a blue-green light with high luminance, which comprises a single crystalline sulfide solid solution of cubic or hexagonal system represented by the formula: Zn.sub.1-(x+y) Cd.sub.y Al.sub.x S, wherein x and y satisfy 0.001.ltoreq.x<0.1, 0<y.ltoreq.0.5, respectively.

Abstract: An electroluminescent device of compound semiconductor including a semiconductor substrate, a buffer layer epitaxially grown on the semiconductor substrate and a luminescent layer epitaxially grown on the buffer layer, the substrate being formed from a single crystal of zinc sulfide, zinc selenide or a mixed crystal thereof, the luminescent layer being formed from aluminum nitride, indium nitride, gallium nitride or a mixed crystal of at least two of the nitrides.

Abstract: A high-purity II-VI semiconducting compound can be produced by initially preparing a substrate of a II-VI semiconducting compound by a chemical transport method with a halogen as transport medium and then epitaxially growing a layer of a II-VI compound on this substrate.

Abstract: An electroluminescent device of compound semiconductor which is made of II-IV compound semiconductor to be in pn junction type, wherein n layer of the pn junction part comprises a II-VI compound semiconductor layer containing comprises a II-VI compound semiconductor layer containing zinc as an essential composite element and p layer of the pn junction part comprises a II-VI compound semiconductor layer having an epitaxial layer containing M, Be and Te (wherein M is Cd or Zn) as an essential composite element.

Abstract: A process for preparing an electroluminescent device of a compound semiconductor comprising a step (A) of epitaxially forming over a semiconductor substrate an electroconductive layer of a compound semiconductor and an electroluminescent layer of a p-n junction type compound semiconductor placed over the electroconductive layer and a step (B) of forming a pair of ohmic electrodes as electrically connected to each of said layers, both of the steps (A) and (B) being performed by using molecular beam growth under the irradiation with a light beam.

Abstract: A compound semiconductor luminescent device is disclosed which comprises a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer, a luminescent layer, and a current injection layer, wherein the substrate and the layers are made of at least one kind of II-VI group compound semiconductor.

Abstract: An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate,the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer.

Abstract: A process for preparing a doped epitaxial compound semiconductor on a substrate by molecular beam epitaxy, the molecular beam epitaxy being effected under the irradiation of the substrate surface with a specific electromagnetic radiation.

Abstract: An improved process for the production of an epitaxial II-VI compound semiconductor containing sulfur as the VI element by molecular beam epitaxy employing a sulfur molecular beam and a II element molecular beam in which the sulfur molecular beam is provided from solid sulfur through a specific two-step heating.

Abstract: The present invention provides an electroluminescent device of a Group II-VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for injecting into the light-emitting portion the current to be produced in the device by the application of an external voltage.

Abstract: The present invention provides an electroluminescent device of Group II-VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for injecting into the light-emitting portion the current to be produced in the device by the application of an external voltage.

Abstract: The present invention provides an electroluminescent device of Group II-14 VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for injecting into the light-emmitting portion the current to be produced in the device by the application of an external voltage.