Abstract: A dielectric ceramic material is represented by the following compositional formula, (100-a)[Bau{(ZnvCo1-v)wNbx}O?1]-a[MyTazO?2], where M represents at least one species selected from K, Na, and Li. In one method, the dielectric material is produced by mixing raw material powders such that proportions by mol of component metals simultaneously satisfy the relations, 0.5?a?25; 0.98?u?1.03; 0?v?1; 0.274?w?0.374; 0.646?x?0.696; 0.5?y?2.5; and 0.8?z?1.2. The method further includes subjecting the resultant mixture to primary pulverization; calcining the resultant powder at 1,100-1,300° C., followed by wet secondary pulverization; drying the resultant paste; granulating; molding the resultant granules to thereby yield a compact; and firing the compact in air advantageously at 1,400-1,600° C.

Abstract: A dielectric composition is based on a BaO—MgO—Nb2O5 system material (BMN system material) having a dielectric constant, &egr;, of about 30, a large Q-value (no-load quality coefficient) and a comparatively small absolute value of the temperature coefficient (&tgr;f) of its resonance frequency but containing no expensive Ta. The dielectric material has a composite perovskite crystal structure as the main crystal phase, wherein a predetermined amount of KNbO3 is added to a BMN system material. The high frequency characteristics can be further improved by partially replacing Nb with Sb and partially replacing the B site of the perovskite crystal structure with Sn.

Abstract: A dielectric composition is based on a BaO—MgO—Nb2O5 system material (BMN system material) having a dielectric constant, &egr;, of about 30, a large Q-value (no-load quality coefficient) and a comparatively small absolute value of the temperature coefficient (&tgr;f) of its resonance frequency but containing no expensive Ta. The dielectric material has a composite perovskite crystal structure as the main crystal phase, wherein a predetermined amount of KNbO3 is added to a BMN system material. The high frequency characteristics can be further improved by partially replacing Nb with Sb and partially replacing the B site of the perovskite crystal structure with Sn.

Abstract: A dielectric ceramic material is represented by the following compositional formula, (100-a)[Bau{(ZnvCo1-v)wNbx}O&dgr;1]-a[MyTa2O&dgr;2], where M represents at least one species selected from K, Na, and Li. In one method, the dielectric material is produced by mixing raw material powders such that proportions by mol of component metals simultaneously satisfy the relations, 0.5≦a≦25; 0.98≦u 23 1.03; 0≦v≦1; 0.274 ≦w≦0.374; 0.646≦x ≦0.696; 0.5≦y≦2.5; and 0.8≦z≦1.2. The method further includes subjecting the resultant mixture to primary pulverization; calcining the resultant powder at 1,100-1,300° C., followed by wet secondary pulverization; drying the resultant paste; granulating; molding the resultant granules to thereby yield a compact; and firing the compact in air advantageously at 1,400-1,600° C.