Abstract: The present invention provides a gain measurement device for an optical amplifier and measurement method therefore enable continuous measurement at high speed and high precision with quite simple construction. The device includes a first light source outputting a light for using in measurement of a plurality of wavelength points, a second light source outputting a light having a plurality of wavelengths for using in measurement of a plurality of wavelength points other than the former wavelength points, means for selectively leading out one of the output of the first light source and a multiplexed output of the outputs from the first and second sources, and measuring means for deriving the gain versus wavelength characteristics of the optical amplifier on the basis of input and output characteristics when the output of the first light source is supplied to the optical amplifier and input and output characteristics when the multiplexed output is supplied to the optical amplifier.

Abstract: The present invention provides a gain measurement device for an optical amplifier and measurement method therefore enable continuous measurement at high speed and high precision with quite simple construction. The device includes a first light source outputting a light for using in measurement of a plurality of wavelength points, a second light source outputting a light having a plurality of wavelengths for using in measurement of a plurality of wavelength points other than the former wavelength points, means for selectively leading out one of the output of the first light source and a multiplexed output of the outputs from the first and second sources, and measuring means for deriving the gain versus wavelength characteristics of the optical amplifier on the basis of input and output characteristics when the output of the first light source is supplied to the optical amplifier and input and output characteristics when the multiplexed output is supplied to the optical amplifier.

Abstract: In a tip portion structure basically having a substrate, a plate spring, and a ground block, the substrate is attached to a signal line on a back surface of the substrate and is contacted on the tip with the signal electrode of the DUT placed on a device stage. The plate spring is made of a resilient material, placed on the front side of the substrate, and positioned to apply a pressure to the substrate. The ground block is positioned between the signal line and the device stage functioned as a ground electrode of the DUT. Alternatively, the tip portion structure further may have a ground plate or a ground surface formed of a conductive thin plate covering entirely the front surface of the substrate, and shaped to surround the signal line in cooperation with the ground block. A plurality of the signal lines may be arranged in parallel on the same plane of the substrate.

Abstract: In a tip portion structure basically having a substrate, a plate spring, and a ground block, the substrate is attached to a signal line on a back surface of the substrate and is contacted on the tip with the signal electrode of the DUT placed on a device stage. The plate spring is made of a resilient material, placed on the front side of the substrate, and positioned to apply a pressure to the substrate. The ground block is positioned between the signal line and the device stage functioned as a ground electrode of the DUT. Alternatively, the tip portion structure further may have a ground plate or a ground surface formed of a conductive thin plate covering entirely the front surface of the substrate, and shaped to surround the signal line in cooperation with the ground block. A plurality of the signal lines may be arranged in parallel on the same plane of the substrate.

Abstract: In a tip portion structure basically having a substrate, a plate spring, and a ground block, the substrate is attached to a signal line on a back surface of the substrate and is contacted on the tip with the signal electrode of the DUT placed on a device stage. The plate spring is made of a resilient material, placed on the front side of the substrate, and positioned to apply a pressure to the substrate. The ground block is positioned between the signal line and the device stage functioned as a ground electrode of the DUT. Alternatively, the tip portion structure further may have a ground plate or a ground surface formed of a conductive thin plate covering entirely the front surface of the substrate, and shaped to surround the signal line in cooperation with the ground block . A plurality of the signal lines may be arranged in parallel on the same plane of the substrate.

Abstract: In a high-frequency probe having a detachable end according to the present invention, parts relating to replacement of an end unit are three parts, that is, an end unit, a probe body, and a pressure block. The end unit comprises a coaxial cable, two slender plate-like ground plates. The coaxial cable is linear in the direction of the end of the high-frequency probe. The ground plates sandwich the coaxial cable. The probe body has an end unit support surface, a circuit board, an end unit arrangement surface and an end part guide. The end unit support surface forms a perpendicular surface used for fixing the end unit to a predetermined position in the end side of the central block in a central part of a surface of the body block. The circuit board connects the end unit to a coaxial connector. The end unit arrangement surface forms a plane in an end side of the body block. And further the guide groove positions and fixes the ground plate in the end part.

Abstract: A process for manufacturing a high frequency multichip module includes a reception inspection step which includes steps of preparing a vertical-type probe, setting the high frequency bare chip on a device stage, and measuring high frequency characteristics of the high frequency bare chip using the vertical-type probe. The prepared vertical-type probe has a center conductor and ground conductors arranged at both sides of the tip portion of the center conductor in the vertical direction in which the probe is pressed to electrodes of the high frequency bare chip. The high frequency bare chip has a ground electrode disposed at the opposite side of the chip from the signal electrodes on the upper surface of a device stage. Then, only a good product is fed to the next step. After the reception inspection, the process goes to a component mounting step.