Abstract: A method of emitting electrons by applying a voltage between a voltage application electrode and a target to be irradiated with the electrons emitted from an electron emission electrode with a conical portion in an electron emission device. The voltage application electrode is formed to oppose the electron emission electrode so as to sandwich an insulating layer therebetween and the target. A charge of the electron emission electrode which is lost by electron emission during an electron emission operation is supplied after the electron emission operation is completed.

Abstract: An electron emitting device is provided with a p-semiconductor layer formed on a semiconductor substrate. The p-semiconductor layer is composed of a diamond layer.

Abstract: An electron emission device is provided in which a drive current for driving an electron emission element is maintained at a constant level. The device comprises a transistor having its base provided with a divided voltage. The electron emission element is responsive to the transistor.

Abstract: A multi type electron emission element comprises a plurality of electrodes formed on a deposition surface of an insulating material and each having a conical portion of a single crystal, an insulating layer formed on the deposition surface and having openings respectively centered on the conical portions, and a deriving electrodes, part of which is formed near at least the concial portions, the deriving electrode being formed on the insulating layer.

Abstract: An X-ray exposure apparatus wherein a member sensitive to X-ray is exposed to a pattern formed on a mask with the X-rays, includes an X-ray source for emitting X-rays, an irradiation chamber for accommodating the mask and the sensitive member and exposing them to the X-rays emitted by the X-ray source within the chamber and a vacuum pump for evacuating the chamber to effect the exposure operation in a vacuum.

Abstract: A semiconductor electron emitting device comprising a Schottky electrode and a p type semiconductor. The Schottky electrode is disposed on the p type semiconductor and defines a junction formed therebetween. The p type semiconductor has an impurity concentration within a predetermined range adapted for causing an avalanche breakdown responsive to a reverse biasing voltage applied between said p type semiconductor and said Schottky electrode. Electrons are emitted from the Schottky electrode in response to the application of the reverse bias voltage.

Abstract: A semiconductor light emitting device comprises a substrate, an n-type semiconductor layer formed on the substrate, a p-type semiconductor layer formed on a portion of a surface of the n-type semiconductor layer, an electrode for applying a reverse biasing voltage to the PN junction to cause an avalanche breakdown and an area formed in a portion of the PN junction. The p-type semiconductor layers forms a planar type PN junction with the n-type semiconductor layer. The area formed in a portion of the PN junction has a lower break down voltage than that of other area.

Abstract: A fine working method of a crystalline material comprises forming an ion injection region in a crystalline material by irradiating a focused ion beam on a crystalline material and subsequently removing a predetermined region of the ion injection region by applying a chemical etching treatment. The method includes performing ion injection where no removal of the predetermined region occurs even if the crystalline material is exposed to an etchant. The predetermined region is removed by injecting an etchant into the ion injection region.

Abstract: A cold cathode device wherein a cold cathode and an anode face each other with an electron transit path intermediated therebetween, and one or more control electrodes structurally insulated from the said cathode and the anode, are provided exposing to the electron transit path. A cold cathode vacuum tube has an electron emission element having a p-type semiconductor region on an electron emission side and a work function lowering region with junctional relation to the p-type semiconductor region; and a plate electrode structurally insulated from the electron emission element by using an insulation layer which is formed with an electron transmit path corresponding in position to an electron emission area of the electron emission element.

Abstract: A multi-electron-beam pattern drawing apparatus having a plurality of electron beam sources and a plurality of electron beam sensors, provided on a common base member, is disclosed. The electron beam sources can be selectively driven for different uses, such as a pattern drawing (exposure) purpose and position detecting purpose, for example. In another aspect, the apparatus is provided with a function for correcting the pattern drawing magnification.

Abstract: A surface conduction electron-emitting device includes a high-potential electrode provided on a substrate surface, an electron-emitting region provided in contact with the periphery of an exposed part of the high-potential electrode, and a low-potential electrode in contact with the periphery of the electron-emitting region. The low-potential electrode may project upward in the thickness direction of the substrate to a higher level than the high-potential electrode. A device for applying a voltage may further provided between the high-potential electrode and low-potential electrode. The low-potential electrode may be divided into plural numbers and potential may be applied to each of the low-potential electrodes independently.

Abstract: An electron-beam information exchange apparatus adapted to effect information exchange in incoming light signals and outgoing light signals by utilizing electron beams. The apparatus has a plurality of electron beam generating means for generating electron beams according to the incoming light signals; a plurality of electron beam deflecting means for independently deflecting individual electron beams emitted from the electron beam generating means; and a plurality of electron beam detecting means for reproducing information from the thus-deflected electron beams to generate the outgoing light beams. The electron beam detecting means controls the electron beams so that each of the electron beams is made incident upon a desired one of said electron beam detecting means. Also, the electron beam generating means are semiconductor devices for generating electron beams.

Abstract: An electron emission device comprises an electron emission electrode with a pointed end and a counter electrode positioned opposite to the pointed end, both formed by fine working of a conductive layer laminated on an insulating substrate.

Abstract: A charged-particle beam pattern drawing apparatus for drawing, by use of a charged-particle beam, a desired circuit pattern on a workpiece having a surface coated with a sensitive material, is disclosed. The apparatus includes a data source having data stored therein related to the circuit pattern, a plurality of charged-particle beam producing sources for emitting charged-particle beams toward the workpiece, in accordance with the data supplied thereto from the data source, and a plurality of deflecting electrodes each being provided for a corresponding one of the charged-particle beam producing source, for deflecting the charged-particle beams from the charged-particle beam producing sources independently of each other and in accordance with the data supplied from the data source.

Abstract: An electron beam head particularly suitably usable in an electron beam pattern drawing apparatus or otherwise is disclosed. The electron beam head includes an electron beam source and an electron beam detector which are provided on a common base member. Secondary electrons and/or reflected electrons caused when an electron beam emitted from the electron beam source impinges upon a workpiece or an object to be examined, are detected by the detector. These secondary electrons and/or reflected electrons can be efficiently collected and detected and, on the basis of which, the information concerning the position or otherwise related to the workpiece or the object to be examined can be detected precisely.

Abstract: A measuring system particularly suitably usable with an apparatus having a plurality of electron emitting sources, for measuring the characteristics of the electron emitting sources is disclosed. In the measuring system, the electron emitting sources are driven so that they emit electron flows of predetermined and different frequencies. The emitted electron flows are collected and, thereafter, only those signals having components corresponding to the predetermined frequencies are extracted. Based on the extracted signals, the characteristics of the electron emitting sources are measured at the same time and independently of each other.

Abstract: An electron emission device comprises a P-type semiconductor layer which emits electron injected into the P-type semiconductor layer by utilizing the negative electron affinity state. At least one of said N-type semiconductor layer and the P-type semiconductor layer is made to have a super-lattice structure.

Abstract: A position detecting device for detecting the position of an object includes an illumination optical system for producing a light beam and for irradiating the object with the light beam, an optical system for focusing the light beam, a focus position controlling system operative to change the position at which the light beam is focused by the focusing optical system, a first detecting device for receiving the light beam reflected from the object to detect the state of incidence of the light beam on the object, and a second detecting device for detecting the position of the object on the basis of the detection of the state of incidence of the light beam on the object by the first detecting means.

Abstract: An electron emitting apparatus comprising a plurality of electron emitting devices having an elongated electron emitting pattern which extends in a first direction. The adjacent electron emitting devices are arranged so as to be deviated in a second direction which crosses the first direction.

Abstract: An alignment system for aligning a mask and a wafer each having an alignment mark, includes an irradiation system for irradiating the alignment marks of the mask and the wafer with an electron beam, a detecting system for detecting the amount of electron beam absorbed by the alignment marks, and an adjusting system for adjusting a relative position of the mask and the wafer, in accordance with the detection, so as to bring the mask and the wafer into a predetermined positional relation.