Abstract: A data linkage support system is disclosed that includes a storage device storing a process object table and a specification table, and an arithmetic device that displays a screen including display of a data item prescribed by specification information of the specification table and an item selection interface accepting selection of a corresponding data item in the process object table to be correlated with the data item and that correlates the corresponding data item selected in the item selection interface with the data item prescribed by the specification information to generate and store a conversion parameter of accounting data between the consolidated subsidiary company and the parent company into the storage device.

Abstract: A data linkage support system is disclosed that includes a storage device storing a process object table and a specification table, and an arithmetic device that displays a screen including display of a data item prescribed by specification information of the specification table and an item selection interface accepting selection of a corresponding data item in the process object table to be correlated with the data item and that correlates the corresponding data item selected in the item selection interface with the data item prescribed by the specification information to generate and store a conversion parameter of accounting data between the consolidated subsidiary company and the parent company into the storage device.

Abstract: Provided is a method for manufacturing a nitride semiconductor device, including the steps of: forming an AlNO buffer layer containing at least aluminum, nitrogen, and oxygen on a substrate; and forming a nitride semiconductor layer on the AlNO buffer layer, wherein, in the step of forming the AlNO buffer layer, the AlNO buffer layer is formed by a reactive sputtering method using aluminum as a target in an atmosphere to and from which nitrogen gas and oxygen gas are continuously introduced and exhausted, and the atmosphere is an atmosphere in which a ratio of a flow rate of the oxygen gas to a sum of a flow rate of the nitrogen gas and the flow rate of the oxygen gas is not more than 0.5%.

Abstract: A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emitting layer. The semiconductor light-emitting device also includes an insulation film located on part of the p-type semiconductor layer in an unexposed section, a first transparent conductive film located on substantially the whole of the p-type semiconductor layer where the insulation film is not located in the unexposed section, and a second transparent conductive film located on the insulation film and the first transparent conductive film.

Abstract: Provided is a method for manufacturing a nitride semiconductor device, including the steps of: forming an AlNO buffer layer containing at least aluminum, nitrogen, and oxygen on a substrate; and forming a nitride semiconductor layer on the AlNO buffer layer, wherein, in the step of forming the AlNO buffer layer, the AlNO buffer layer is formed by a reactive sputtering method using aluminum as a target in an atmosphere to and from which nitrogen gas and oxygen gas are continuously introduced and exhausted, and the atmosphere is an atmosphere in which a ratio of a flow rate of the oxygen gas to a sum of a flow rate of the nitrogen gas and the flow rate of the oxygen gas is not more than 0.5%.

Abstract: A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emitting layer. The semiconductor light-emitting device also includes an insulation film located on part of the p-type semiconductor layer in an unexposed section, a first transparent conductive film located on substantially the whole of the p-type semiconductor layer where the insulation film is not located in the unexposed section, and a second transparent conductive film located on the insulation film and the first transparent conductive film.

Abstract: There is provided a method for manufacturing an aluminum-containing nitride intermediate layer, a method for manufacturing a nitride layer, and a method for manufacturing a nitride semiconductor element by using the nitride layer, in which at least one of the following conditions (i) to (iii) is employed during stacking of the aluminum-containing nitride intermediate layer by using a DC magnetron sputtering method in which a voltage is applied by means of a DC-continuous scheme. (i) The shortest distance between a center of a surface of a target and a growth surface of a substrate is set to 100 mm or more and 250 mm or less. (ii) Nitrogen gas is used as gas supplied to a DC magnetron sputtering apparatus. (iii) The target is inclined with respect to the growth surface of the substrate.

Abstract: The present invention relates to a ridge-stripe semiconductor laser device and a process for producing the same. More specifically, the object of the present invention is to control the formation of cavities at the side of the ridge without adding any step, and to provide a ridge stripe semiconductor laser device with good properties by strictly controlling its ridge width and a process for producing the same. Thereby, it is possible to form a ridge whose sidewalls stand almost vertically.

Abstract: For evaporating a protective coating on a light emitting end surface 51a of a laser chip 51, there is formed first an Si film 52a, which is free from generation of oxygen due to decomposition. Thus, there is created a coating in the vicinity of the light emitting end surface 51a immediately after start of evaporation process under conditions of low partial pressure of oxygen. At the same time, in the later evaporation process of the protective coating 52b, if oxygen is generated due to decomposition of the evaporation material Al2O3, and oxygen partial pressure is increased, collision or bonding of the oxygen with the end surface 51a is prevented, thereby decreasing damages given to the end surface 51a in the process of protective coating creation. Further, the Si film 52a has a film thickness as small as approx. 20 Å. This controls generation of leakage current in the Si film 52a (or the end surface 51a), and prevents negative influence on oscillation characteristics.

Abstract: The present invention relates to a ridge-stripe semiconductor laser device and a process for producing the same. More specifically, the object of the present invention is to control the formation of cavities at the side of the ridge without adding any step, and to provide a ridge stripe semiconductor laser device with good properties by strictly controlling its ridge width and a process for producing the same. Thereby, it is possible to form a ridge whose sidewalls stand almost vertically.

Abstract: For evaporating a protective coating on a light emitting end surface 51a of a laser chip 51, there is formed first an Si film 52a, which is free from generation of oxygen due to decomposition. Thus, there is created a coating in the vicinity of the light emitting end surface 51a immediately after start of evaporation process under conditions of low partial pressure of oxygen. At the same time, in the later evaporation process of the protective coating 52b, if oxygen is generated due to decomposition of the evaporation material Al2O3, and oxygen partial pressure is increased, collision or bonding of the oxygen with the end surface 51a is prevented, thereby decreasing damages given to the end surface 51a in the process of protective coating creation. Further, the Si film 52a has a film thickness as small as approx. 20 Å. This controls generation of leakage current in the Si film 52a (or the end surface 51a), and prevents negative influence on oscillation characteristics.

Abstract: The light-emitting diode array of the invention includes: a semiconductor substrate of a first conductivity type and a plurality of light-emitting elements linearly arranged on the substrate of the first conductivity type. Each of the plurality of light-emitting elements includes: a cladding layer of the first conductivity type; a cladding layer of a second conductivity type; an (AlxGa1−x)yIn1−yP (where 0≦x≦1 and 0≦y≦1) active layer interposed between the cladding layer of the first conductivity type and the cladding layer of the second conductivity type; and a current diffusion layer of the second conductivity type deposited on the cladding layer of the second conductivity type. In the light-emitting diode array, at least the current diffusion layer of the second conductivity type and the cladding layer of the second conductivity type are electrically isolated from each other in two adjacent light-emitting elements among the plurality of light-emitting elements.

Abstract: A silencing apparatus for effectively reducing noises in the three dimension space which detects physical characteristics of the noise source by the laser doppler sensor unit during the noise source comes close to the telephone booth, and collects acoustic characteristics of the noise source by the sensor microphone array. The control portion generates an inverse-phased signal against the noise source so that the noises are decreased at the error sensor, and stores the noise source information ( physical characteristics and the acoustic characteristics) and the generated inverse-phased signal. When the same noise source come closely, the voice is generated from the speaker using the inverse-phased signal stored in the memory. The control portion generates an inverse-phased voice from the speaker when the collected noise by the sensor microphone is actually over a certain threshold level.

Abstract: A silencing apparatus for effectively reducing noises in the three dimension space which detects physical characteristics of the noise source by the laser doppler sensor unit during the noise source comes close to the telephone booth, and collects acoustic characteristics of the noise source by the sensor microphone array. The control portion generates an inverse-phased signal against the noise source so that the noises are decreased at the error sensor, and stores the noise source information (physical characteristics and the acoustic characteristics) and the generated inverse-phased signal. When the same noise source come closely, the voice is generated from the speaker using the inverse-phased signal stored in the memory. The control potion generates an inverse-phased voice from the speaker when the collected noise by the sensor microphone is actually over a certain threshold level.