Abstract: A thermoelectric conversion material includes a base material that is a semiconductor having Si and Ge as constituent elements, a first additive element that is different from the constituent elements, has a vacant orbital in a d or f orbital located inside an outermost shell thereof, and forms a first additional level in a forbidden band of the base material, and oxygen. The oxygen content ratio is 6 at % or less.

Abstract: A method of determining the result of an assay in a microfluidic device includes the steps of: dispensing a sample droplet onto a first portion of an electrode array of the microfluidic device; dispensing a reagent droplet onto a second portion of the electrode array of the microfluidic device; controlling actuation voltages applied to the electrode array to mix the sample droplet and the reagent droplet into a product droplet; sensing a dynamic property of the product droplet; and determining an assay of the sample droplet based on the sensed dynamic property. The dynamic property is a physical property of the product droplet that influences a transport property of the product droplet on the electrode array. Example dynamic properties of the product droplet include the moveable state, split-able state, and viscosity based on droplet properties. The method may be used to perform an amoebocyte lysate (LAL) assay.

Abstract: A thermoelectric conversion element includes a thermoelectric conversion material portion having a compound semiconductor composed of first base material element A and second base material element B and represented by Ax-cBy with value of x being smaller by c with respect to a compound AxBy according to a stoichiometric ratio, a first electrode disposed in contact with the thermoelectric conversion material portion, and a second electrode disposed in contact with the thermoelectric conversion material portion and apart from the first electrode. An A-B phase diagram includes a first region corresponding to low temperature phase, second region corresponding to high temperature phase, and third region corresponding to coexisting phase, sandwiched between the low temperature phase and the high temperature phase, in which the low and high temperature phases coexist. A temperature at a boundary between the first region and the third region changes monotonically with a change in c.

Abstract: Disclosed herein are methods for delivering a composition comprising an adeno-associated virus (AAV) to one or more pancreatic cells in a subject. Also disclosed are adeno-associated viral vectors for use in these methods.

Abstract: To provide a transdermal drug delivery patch that can be suitably used for an immediate release application of a pharmaceutical with a comparatively low molecular weight. A transdermal drug delivery patch, provided with a matrix and at least one drug disposed within the matrix, wherein the matrix has a water holding capacity of 10 mg/cm2 or less, and the drug is a pharmaceutical having a molecular weight of 5000 or less.

Abstract: A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material.

Abstract: A thermoelectric conversion material is represented by a composition formula Ag2-x?xS, where ? is one selected from among Ni, V, and Ti. The value of x is greater than 0 and smaller than 0.6.

Abstract: A thermoelectric conversion material is represented by a composition formula Ag2S(1-x)Sex. The value of x is not smaller than 0.2 and not greater than 0.95.

Abstract: A thermoelectric conversion material is constituted of a semiconductor that contains a constituent element and an additive element having a difference of 1 in the number of electrons in an outermost shell from the constituent element, the additive element having a concentration of not less than 0.01 at % and not more than 30 at %. The semiconductor has a microstructure including an amorphous phase and a granular crystal phase dispersed in the amorphous phase. The amorphous phase includes a first region in which the concentration of the additive element is a first concentration, and a second region in which the concentration of the additive element is a second concentration lower than the first concentration. The first concentration and the second concentration have a difference of not less than 15 at % and not more than 25 at % therebetween.

Abstract: A heater includes a base, a plurality of heat generators arranged on the base in parallel to a longitudinal direction of the base, a plurality of electrodes on the base, and conductor paths disposed on the base. The conductor paths are electrically connected to the heat generators and the electrodes. The conductor paths include a main conductor path connected to one of the electrodes and a branch conductor path branched from the main conductor path. At least a part of the branch conductor path has a lower electrical resistance per unit length than an electrical resistance per unit length of the main conductor path.

Abstract: A thermoelectric conversion material is represented by a composition formula Ag2S(1-x)Sex, where x has a value of greater than 0.01 and smaller than 0.6.

Abstract: A stack includes a base portion consisting of silicon carbide and having a first surface that is a Si face and a carbon atom thin film disposed on the first surface and including a first main surface facing the first surface and a second main surface that is a main surface on an opposite side from the first main surface. The carbon atom thin film consists of carbon atoms. The carbon atom thin film includes at least one of a buffer layer that is a carbon atom layer including carbon atoms bonded to silicon atoms forming the Si face and a graphene layer. The second main surface includes a plurality of terraces parallel to the Si face of the silicon carbide forming the base portion and a plurality of steps connecting together the plurality of terraces.

Abstract: An electronic apparatus includes transmitter circuitry configured to transmit a first association request frame to a first electronic apparatus; and receiver circuitry configured to receive a first association response frame corresponding to the first association request frame from the first electronic apparatus, and to receive a second association request frame from the first electronic apparatus.

Abstract: The present invention relates to a self-emulsifying polyisocyanate composition including a reaction mixture of (a) an anionic compound having a specific structure, (b) nonionic hydrophilic group-containing monofunctional alcohol having a specific structure, (c) organic polyisocyanate, and (d) tertiary amine, a two-part coating composition that contains the composition, and a coating film that can be obtained from the coating composition.

Abstract: A mask structure optimization device includes a classification target image size acquisition unit that is configured to acquire a size of a classification target image which is an image including a classification target, a mask size setting unit that is configured to set a size of a mask applied to the classification target image, a brightness detection unit that is configured to detect a brightness of each pixel within the classification target image at a position on an opposite side of the mask from the classification target image, a sum total brightness calculation unit that is configured to calculate the sum total brightness of the each pixel within the classification target image detected by the brightness detection unit, an initial value setting unit that is configured to set an initial value for a mask pattern of the mask, and a movement unit that is configured to relatively move the mask with respect to the classification target image.

Abstract: An optical sensor includes a support layer, a thermoelectric conversion material portion disposed on the support layer and including a strip-shaped first material layer that converts thermal energy into electrical energy and a strip-shaped second material layer that is electrically conductive, and a light absorbing film disposed on the thermoelectric conversion material portion to form a temperature difference in a longitudinal direction of the first material layer. The first material layer includes a first region and a second region. The second material layer includes a third region and a fourth region connected to the second region. The optical sensor further includes a first electrode electrically connected to the first region, and a second electrode disposed apart from the first electrode and electrically connected to the third region. The first material layer has a width, perpendicular to the longitudinal direction, of 0.1 ?m or more.

Abstract: A photosensor includes: a support; a thermoelectric conversion material section that is disposed on a first main surface of the support and that includes a plurality of first material layers each having an elongated shape, a plurality of second material layers each having electrical conductivity and an elongated shape, and an insulating film, the first material layers and the second material layers each being configured to convert thermal energy into electrical energy; a heat sink that is disposed on a second main surface of the support and along an outer edge of the support; a light-absorbing film that is disposed in a region surrounded by inner edges of the heat sink as viewed in a thickness direction of the support so as to form temperature differences on the first main surface of the support in longitudinal directions of the first material layers.

Abstract: A plate-shaped thermoelectric conversion material having a first main surface and a second main surface on the opposite side of the first main surface is formed of semiconductor grains that are in contact with one another. The semiconductor grains each include a particle composed of a semiconductor containing an amorphous phase, and an oxidized layer covering the particle. The distance between the first main surface and the second main surface exceeds 0.5 mm.

Abstract: A multilayer body includes a base portion and a graphene film. In an ion mass distribution versus depth of the multilayer body determined by time-of-flight secondary ion mass spectrometry, detection intensities of C6 ions have a maximum value at a depth of greater than 0 nm and 2.5 nm or less from an exposed surface. Detection intensities of C3 ions have a maximum value at a depth of greater than 0 nm and 3.0 nm or less from the exposed surface. Detection intensities of SiC4 ions have a maximum value at a depth of 0.5 nm or greater and 5.0 nm or less from the exposed surface. Detection intensities of SiC ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface. Detection intensities of Si2 ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface.

Abstract: A thermoelectric conversion material contains a matrix composed of a semiconductor and nanoparticles disposed in the matrix, and the nanoparticles have a lattice constant distribution ?d/d of 0.0055 or more.