Abstract: In prediction processing, the controller predicts a temporal change in a calculation capability available in grid computing processing of each of a plurality of arithmetic devices. In the request processing, in a case where the calculation capability of the arithmetic device predicted to be available in the grid computing processing on the basis of a result of the prediction processing is insufficient, the controller presents, to a user who owns another arithmetic device except for the arithmetic device predicted to be available in the grid computing processing among the plurality of arithmetic devices, request information for prompting provision of the calculation capability of the another arithmetic device to the grid computing processing.

Abstract: According to one embodiment, a wireless communication device notifies another wireless communication device that any one of a first frequency and a second frequency is set as a primary frequency, connects to the other wireless communication device at the first frequency and the second frequency, and in a case receiving information identifying that the other wireless communication device has a restriction on transmission and reception between the second frequency and the first frequency, obtains an access right of a frame addressed to the other wireless communication device at a secondary frequency other than the primary frequency out of the first frequency and the second frequency.

Abstract: A thermoelectric conversion material is represented by a composition formula Ag2-x?xS, where ? is one selected from among Ni, V, and Ti. The value of x is greater than 0 and smaller than 0.6.

Abstract: A thermoelectric conversion material is represented by a composition formula Ag2S(1-x)Sex, where x has a value of greater than 0.01 and smaller than 0.6.

Abstract: A thermoelectric conversion material includes a base material that is a semiconductor having Si and Ge as constituent elements, a first additive element that is different from the constituent elements, has a vacant orbital in a d or f orbital located inside an outermost shell thereof, and forms a first additional level in a forbidden band of the base material, and oxygen. The oxygen content ratio is 6 at % or less.

Abstract: A thermoelectric conversion device includes a first electrode, a thermoelectric conversion material portion containing Si and Ge as constituent elements, a conductive joining member disposed in contact with the first electrode and the thermoelectric conversion material portion and joining the first electrode and the thermoelectric conversion material portion together, and a second electrode. The Si and the Ge contain amorphous phase and crystalline phase. The joining member contains at least one of Ag, Cu, Ti, and Sn or an alloy thereof as a major constituent. The thermoelectric conversion material portion includes a first layer containing the major constituent in an amount of 10 atm % or more and in contact with the joining member, and a second layer. The second layer has a degree of crystallinity of 40% by volume to 90% by volume.

Abstract: A thermoelectric conversion material is represented by a composition formula Ag2S(1-x)Sex. The value of x is not smaller than 0.2 and not greater than 0.95.

Abstract: A photosensor includes: a support; a thermoelectric conversion material section that is disposed on a first main surface of the support and that includes a plurality of first material layers each having an elongated shape, a plurality of second material layers each having electrical conductivity and an elongated shape, and an insulating film, the first material layers and the second material layers each being configured to convert thermal energy into electrical energy; a heat sink that is disposed on a second main surface of the support and along an outer edge of the support; a light-absorbing film that is disposed in a region surrounded by inner edges of the heat sink as viewed in a thickness direction of the support so as to form temperature differences on the first main surface of the support in longitudinal directions of the first material layers.

Abstract: An optical sensor includes a support and a thermoelectric-conversion material section including first material layers, second material layers, and a third material layer. Each of the first material layers may have a first region including a first end portion and a second region including a second end portion. Each of the second material layers may have a third region including a third end portion and a fourth region including a fourth end portion. The first region and the second region are electrically connected to the third region and the fourth region, respectively, such that the plurality of first material layers and the plurality of second material layers are alternately connected in series to each other. The third material layer is disposed between the first region and the third region.

Abstract: A thermoelectric conversion material includes, a base material composed of SiGe, a first additive element functioning as a dopant, a second additive element different from the first additive element, and oxygen. The second additive element includes at least one of Mg, Ca, and Ti. A content ratio of the second additive element relative to the base material is 0.5 at % to 5 at %. In a rectangular area of a section of the base material, the rectangular area being selected such that a grain boundary intersects opposite sides of the rectangular area, a distribution of the second additive element and the oxygen has a positive correlation. A correlation coefficient of the correlation is in a range of 0.2 or more and less than 1.0.

Abstract: An optical sensor includes a support layer, a thermoelectric-conversion material section disposed on the support layer and including strip-shaped p-type material layers configured to convert thermal energy into electric energy and strip-shaped n-type material lavers configured to convert thermal energy into electric energy, a heat sink, a light absorbing film, and an insulating film disposed between the thermoelectric-conversion material section and the light absorbing film. Each of the p-type material layers includes a first region overlapping the heat sink and a second region overlapping the light absorbing film. Each of the n-type material layers includes a third region overlapping the heat sink and a fourth region overlapping the light absorbing film. The p-type material layers and the n-type material layers are alternately disposed in series. The light absorbing film includes 60 mass % to 95 mass % of carbon and 5 mass % to 40 mass % of a resin.

Abstract: An optical sensor includes a support film having a first main surface and a second main surface located opposite to the first main surface in a thickness direction; a thermoelectric-conversion material section disposed on the first main surface and including a plurality of strip-shaped first material layers formed of SiGe having p-type conductivity and configured to convert thermal energy into electric energy, and a plurality of strip-shaped second material layers formed of SiGe having n-type conductivity and configured to convert thermal energy into electric energy; a heat sink disposed on the second main surface; and a light absorbing film disposed so as to form a temperature difference in each of the first material layers in longitudinal directions and each of the second material layers in longitudinal directions and configured to convert received light into thermal energy.

Abstract: A thermoelectric conversion material contains a matrix composed of a semiconductor and nanoparticles disposed in the matrix, and the nanoparticles have a lattice constant distribution ?d/d of 0.0055 or more.

Abstract: An optical sensor includes a support layer, a thermoelectric conversion material portion disposed on the support layer and including a strip-shaped first material layer that converts thermal energy into electrical energy and a strip-shaped second material layer that is electrically conductive, and a light absorbing film disposed on the thermoelectric conversion material portion to form a temperature difference in a longitudinal direction of the first material layer. The first material layer includes a first region and a second region. The second material layer includes a third region and a fourth region connected to the second region. The optical sensor further includes a first electrode electrically connected to the first region, and a second electrode disposed apart from the first electrode and electrically connected to the third region. The first material layer has a width, perpendicular to the longitudinal direction, of 0.1 ?m or more.

Abstract: A multilayer body includes a base portion and a graphene film. In an ion mass distribution versus depth of the multilayer body determined by time-of-flight secondary ion mass spectrometry, detection intensities of C6 ions have a maximum value at a depth of greater than 0 nm and 2.5 nm or less from an exposed surface. Detection intensities of C3 ions have a maximum value at a depth of greater than 0 nm and 3.0 nm or less from the exposed surface. Detection intensities of SiC4 ions have a maximum value at a depth of 0.5 nm or greater and 5.0 nm or less from the exposed surface. Detection intensities of SiC ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface. Detection intensities of Si2 ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface.

Abstract: A stack includes a base portion consisting of silicon carbide and having a first surface that is a Si face and a carbon atom thin film disposed on the first surface and including a first main surface facing the first surface and a second main surface that is a main surface on an opposite side from the first main surface. The carbon atom thin film consists of carbon atoms. The carbon atom thin film includes at least one of a buffer layer that is a carbon atom layer including carbon atoms bonded to silicon atoms forming the Si face and a graphene layer. The second main surface includes a plurality of terraces parallel to the Si face of the silicon carbide forming the base portion and a plurality of steps connecting together the plurality of terraces.

Abstract: A thermoelectric conversion material is constituted of a semiconductor that contains a constituent element and an additive element having a difference of 1 in the number of electrons in an outermost shell from the constituent element, the additive element having a concentration of not less than 0.01 at % and not more than 30 at %. The semiconductor has a microstructure including an amorphous phase and a granular crystal phase dispersed in the amorphous phase. The amorphous phase includes a first region in which the concentration of the additive element is a first concentration, and a second region in which the concentration of the additive element is a second concentration lower than the first concentration. The first concentration and the second concentration have a difference of not less than 15 at % and not more than 25 at % therebetween.

Abstract: A thermoelectric conversion material is composed of a compound semiconductor including a plurality of base material elements, and includes: an amorphous phase; and crystal phases having an average grain size of more than or equal to 5 nm, each of the crystal phases being in a form of a grain. The plurality of base material elements include a specific base material element that causes an increase of a band gap by increasing a concentration of the specific base material element. An atomic concentration of the specific base material element included in the crystal phases with respect to a whole of the plurality of base material elements included in the crystal phases is higher than an atomic concentration of the specific base material element included in the compound semiconductor with respect to a whole of the plurality of base material elements included in the compound semiconductor.

Abstract: A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.

Abstract: An optical sensor includes a support film, a thermoelectric conversion material portion, a heat sink, a light absorption film, a first electrode, and a second electrode. The thermoelectric conversion material portion includes a plurality of first material layers and a plurality of second material layers. The support film includes a first layer arranged on the heat sink side in a thickness direction and configured with a phononic structure having a large number of holes, and an insulating second layer arranged on the first layer and in contact with the thermoelectric conversion material portion.