Abstract: A semiconductor image sensor includes: a semiconductor substrate having a number of pixels disposed in a matrix shape, the semiconductor substrate comprising a first region including a charge accumulation region of a photodiode and a floating diffusion and a second region including transistors, each having a gate electrode and source/drain regions; a first silicon oxide film formed above the semiconductor substrate, covering the surface of the charge accumulation region in the first region and formed as side wall spacers on side of the gate electrode walls of at lease some transistors in the second region; and a silicon nitride film formed above the first silicon oxide film, covering the source/drain regions in the second region and having an opening at least in an area above the charge accumulation region in the first region. The semiconductor image sensor is provided which has a high sensitivity and can supply an output with small noises.

Abstract: A semiconductor image sensor includes: a semiconductor substrate having a number of pixels disposed in a matrix shape, the semiconductor substrate comprising a first region including a charge accumulation region of a photodiode and a floating diffusion and a second region including transistors, each having a gate electrode and source/drain regions; a first silicon oxide film formed above the semiconductor substrate, covering the surface of the charge accumulation region in the first region and formed as side wall spacers on side of the gate electrode walls of at lease some transistors in the second region; and a silicon nitride film formed above the first silicon oxide film, covering the source/drain regions in the second region and having an opening at least in an area above the charge accumulation region in the first region. The semiconductor image sensor is provided which has a high sensitivity and can supply an output with small noises.

Abstract: The solid-state image sensor includes a pixel part 10, an analog circuit part 12, a digital circuit part 14 and an input/output circuit part 16. The digital circuit part 14 includes a first well 42c of a second conduction type formed in a second region of a semiconductor substrate 20 of a first conduction type surrounding a first region thereof; a first buried diffused layer 40c of the second conduction type buried in the first region: a second well 44b of the first conduction type formed near a surface of the semiconductor substrate 20 in the first region; and a first transistor 38e formed on the second well 44b.

Abstract: The solid-state image sensor includes a pixel part 10, an analog circuit part 12, a digital circuit part 14 and an input/output circuit part 16. The digital circuit part 14 includes a first well 42c of a second conduction type formed in a second region of a semiconductor substrate 20 of a first conduction type surrounding a first region thereof; a first buried diffused layer 40c of the second conduction type buried in the first region: a second well 44b of the first conduction type formed near a surface of the semiconductor substrate 20 in the first region; and a first transistor 38e formed on the second well 44b.