Abstract: A display device includes: a plurality of first color filters not intersecting a non-linear portion with at least a part of an outer shape of a display region being non-linear, a plurality of second color filters at least part of which intersects the non-linear portion, a first region with the plurality of first color filters disposed, a second region with the plurality of second color filters disposed, a first light blocking portion partitioning the plurality of first color filters, a second light blocking portion partitioning the plurality of second color filters, and a spacer. An overlapping area of the second light blocking portion with respect to the plurality of second color filters is larger than that of the first light blocking portion with respect to the plurality of first color filters. A distribution density of the spacer in the second region is lower than that in the first region.

Abstract: A polysaccharide useful as an ingredient of a food containing psyllium is disclosed. The increase of viscosity resulting from hydrated psyllium can be reduced by the present polysaccharides without adversely affecting the physiologically beneficial effects of psyllium. The present invention also provides a food product containing the psyllium viscosity-reducing polysaccharide and psyllium, and a method of manufacturing the same, characterized by having excellent handling properties and favorable palatability, even if the method includes a step of heating the psyllium, especially in a hydrated form.

Abstract: A thin film transistor includes: a substrate; a gate electrode, a source electrode and a drain electrode formed above the substrate; and an insulating film and a semiconductor film formed between the gate electrode, and the source electrode and the drain electrode, wherein the semiconductor film includes an i-type silicon film, and a portion of the semiconductor film within 50 nm from the insulating film has a microcrystalline structure having a conductivity of 5×10−10 S/cm or more.

Abstract: A thin film transistor includes: a substrate; a gate electrode, a source electrode and a drain electrode formed above the substrate; and an insulating film and a semiconductor film formed between the gate electrode, and the source electrode and the drain electrode, wherein the semiconductor film includes an i-type silicon film, and a portion or the semiconductor film within 50 nm from the insulating film has a microcrystalline structure having a conductivity of 5.times.10.sup.-10 S/cm or more.

Abstract: A character developing apparatus for converting a character string in which outline characters and non-outline characters are mixed into character patterns, and developing the character patterns on a bitmap memory. The character developing apparatus includes a character storage memory for storing the character pattern, a character transfer circuit for selecting the character pattern corresponding to the character code from the character storage memory and transferring the selected character pattern to the bitmap memory. An outline memory stores outline data of the character and a character forming circuit executes outline character extraction processing of consecutively extracting the outline character requiring the character pattern from the character code and character forming processing of consecutively forming the character pattern of the outline character in the character storage memory by use of the outline data in the outline memory.