Abstract: The present invention relates to a method for manufacturing a semiconductor substrate, including: (a) preparing an epitaxial substrate having a nitride semiconductor layer formed on a first main surface of a growth substrate and preparing a first support substrate, forming a resin adhesive layer between the first main surface of the growth substrate and a first main surface of the first support substrate, and bonding the epitaxial substrate to the first support substrate; (b) thinning a second main surface of the growth substrate; (c) forming a first protective thin film layer on the thinned growth substrate; (d) forming a second protective thin film layer on the first support substrate; (e) removing the thinned growth substrate; (f) bonding a second support substrate onto the nitride semiconductor layer; and (g) removing the first support substrate and the resin adhesive layer.

Abstract: An object is to provide a technique capable of suppressing defectives in semiconductor elements. A manufacturing method of a semiconductor device includes a step of forming a laminated body in which an adhesive protective layer, an adhesive layer, a peeling layer, and a support substrate are disposed in this order on a first main surface of the semiconductor substrate, a step of removing the semiconductor substrate other than a portion where a plurality of circuit elements are formed, a step of bonding the portion where the circuit elements are formed to a transfer substrate, a step of removing the peeling layer, the support substrate and the adhesive layer, a step of removing the adhesive protective layer by chemical treatment, and a step of dividing the plurality of circuit elements.

Abstract: In evaluation of the print quality of a symbol, the evaluation processing takes time. A symbol evaluation device (5) includes: a decoding unit (52) that decodes a symbol included in an image and thereby identifies reference position information of the symbol; a module position identification unit (53) that identifies a plurality of module positions included in the symbol on the basis of the reference position information of the symbol identified by the decoding unit; and a quality evaluation unit (54) that evaluates the quality of the symbol on the basis of the plurality of module positions identified by the module position identification unit.

Abstract: A provided is a polycrystalline diamond substrate that can reduce the cost for inhibiting warpage. The polycrystalline diamond substrate is a polycrystalline diamond substrate having a first principal surface and a second principal surface, and includes, between the first principal surface and the second principal surface, a surface having an average grain diameter smaller than each of average grain diameters of the first principal surface and the second principal surface.

Abstract: A split in a dicing street in a semiconductor film is prevented. A semiconductor device includes: a first dicing street passing between a plurality of element regions on which a plurality of protective films are formed one-to-one, the first dicing street extending along a first axis; a second dicing street passing between the plurality of element regions and extending along a second axis; and a stop island disposed on the upper surface of the semiconductor film at an intersection between the first dicing street and the second dicing street, the stop island being in non-contact with the plurality of element regions. X_si>X_ds and Y_si<Y_ds are satisfied.

Abstract: It is an object of the present disclosure to provide a method of manufacturing a thin semiconductor element having a low defect rate. A method of manufacturing a semiconductor element according to the present disclosure includes: forming a metal thin film on an electrode protection layer of a circuit element substrate and a support substrate in vacuum; attaching the metal thin film of the circuit element substrate and the metal thin film of the support substrate by an atomic diffusion joining method; removing a semiconductor substrate by polishing to expose a circuit element; joining a transfer substrate to an exposed surface of the circuit element; and detaching the support substrate from the circuit element after joining the transfer substrate.

Abstract: Removal of substrates in a composite substrate is facilitated, and flaking of the composite substrate in an unintended process is prevented. A method for manufacturing a composite substrate includes: forming a first bonding material in a first surface of a first substrate; forming, in the first surface, at least one groove located more inward than a periphery in a plan view of the first substrate; forming the first bonding material along an inner wall of the at least one groove, the first bonding material not filling into space enclosed by the inner wall of the at least one groove; forming a second bonding material on a second surface of a second substrate; and bonding the first bonding material and the second bonding material together in a region except the at least one groove.

Abstract: The present invention relates to a method for manufacturing a semiconductor substrate, including: (a) preparing an epitaxial substrate having a nitride semiconductor layer formed on a first main surface of a growth substrate and preparing a first support substrate, forming a resin adhesive layer between the first main surface of the growth substrate and a first main surface of the first support substrate, and bonding the epitaxial substrate to the first support substrate; (b) thinning a second main surface of the growth substrate; (c) forming a first protective thin film layer on the thinned growth substrate; (d) forming a second protective thin film layer on the first support substrate; (e) removing the thinned growth substrate; (0 bonding a second support substrate onto the nitride semiconductor layer; and (g) removing the first support substrate and the resin adhesive layer.

Abstract: In evaluation of the print quality of a symbol, the evaluation processing takes time. A symbol evaluation device (5) includes: a decoding unit (52) that decodes a symbol included in an image and thereby identifies reference position information of the symbol; a module position identification unit (53) that identifies a plurality of module positions included in the symbol on the basis of the reference position information of the symbol identified by the decoding unit; and a quality evaluation unit (54) that evaluates the quality of the symbol on the basis of the plurality of module positions identified by the module position identification unit.

Abstract: The present invention makes the identification of a border of a symbol less susceptible to the influence of disturbing noise, and reduces processing time. A symbol border identification device (5) which: identifies a reference position of an element constituting a symbol from decoding results of the symbol; determines whether a region is within the symbol on the basis of profile information that relates to the region and that is based on the reference position; and identifies a border of the symbol on the basis of a border element candidate identified in accordance with the determination result.

Abstract: An object is to provide a technique capable of suppressing defectives in semiconductor elements. A manufacturing method of a semiconductor device includes a step of forming a laminated body in which an adhesive protective layer, an adhesive layer, a peeling layer, and a support substrate are disposed in this order on a first main surface of the semiconductor substrate, a step of removing the semiconductor substrate other than a portion where a plurality of circuit elements are formed, a step of bonding the portion where the circuit elements are formed to a transfer substrate, a step of removing the peeling layer, the support substrate and the adhesive layer, a step of removing the adhesive protective layer by chemical treatment, and a step of dividing the plurality of circuit elements.

Abstract: An image processing device is connected to an imaging unit. The imaging unit has an overlapping region in an imaging range before and after continuous imaging. The image processing device includes: an interface that receives a plurality of captured images obtained by the imaging unit; a measurement unit configured to acquire a measurement result of a subject in the captured image by performing measurement processing to the captured image; a synthesis unit configured to generate a synthesized image by synthesizing the plurality of captured images such that the captured images overlap with one another within an overlapping range corresponding to the overlapping region in imaging order; and an output unit configured to output the synthesized image, information indicating the overlapping range correlated with the synthesized image, and information indicating the measurement result.

Abstract: An image processing method improves the extraction accuracy of objects other than symbols. The image processing method may include four processes. In the first process, an image is input. In the second process, a symbol in the image is read. In the third process, a mask area including the symbol is set. In the fourth process, an object located in an area other than the mark area in the image is recognized.

Abstract: An image processing device includes: an image receiving part configured to receive an image of a target workpiece on a surface of a conveying path captured by means of the imaging unit; a position acquiring part configured to acquire a position of the target workpiece in the captured image; a tilt acquiring part configured to acquire, by using the position of the target workpiece in the captured image acquired by means of the position acquiring part, a tilt angle of an imaging plane of the imaging unit relative to the surface of conveying path; and an outputting part configured to output assistant information used for assisting in the adjustment of the posture of the imaging unit by using the acquired tilt angle.

Abstract: An image processing method improves the extraction accuracy of objects other than symbols. The image processing method may include four processes. In the first process, an image is input. In the second process, a symbol in the image is read. In the third process, a mask area including the symbol is set. In the fourth process, an object located in an area other than the mark area in the image is recognized.

Abstract: This invention provides a parameter determination assisting device and a parameter determination assisting program enabling a more rapid and easy determination of a parameter to be set in a processing device, which obtains a processing result by performing a process using a set of parameters defined in advance on image data obtained by imaging a measuring target object. A user can easily select an optimum parameter set when a determination result and a statistical output are displayed in a list for each of a plurality of trial parameter candidates. For instance, while trial numbers “2”, “4”, and “5”, in which the number of false detections is zero, can perform a stable process, the parameter set of the trial number “2” is comprehensively assumed as optimum since the trial number “2” can perform the process in the shortest processing time length.

Abstract: An image processing device is connected to an imaging unit. The imaging unit has an overlapping region in an imaging range before and after continuous imaging. The image processing device includes: an interface that receives a plurality of captured images obtained by the imaging unit; a measurement unit configured to acquire a measurement result of a subject in the captured image by performing measurement processing to the captured image; a synthesis unit configured to generate a synthesized image by synthesizing the plurality of captured images such that the captured images overlap with one another within an overlapping range corresponding to the overlapping region in imaging order; and an output unit configured to output the synthesized image, information indicating the overlapping range correlated with the synthesized image, and information indicating the measurement result.

Abstract: An image processing device includes: an image receiving part configured to receive an image of a target workpiece on a surface of a conveying path captured by means of the imaging unit; a position acquiring part configured to acquire a position of the target workpiece in the captured image; a tilt acquiring part configured to acquire, by using the position of the target workpiece in the captured image acquired by means of the position acquiring part, a tilt angle of an imaging plane of the imaging unit relative to the surface of conveying path; and an outputting part configured to output assistant information used for assisting in the adjustment of the posture of the imaging unit by using the acquired tilt angle.

Abstract: An user support apparatus includes a display unit configured to display an image obtained by image capturing with the image capturing unit, an input unit configured to receive a designation of a region of a workpiece to be detected in the image displayed on the display unit, and a determining unit configured to determine an image capturing start condition for the image capturing unit that is defined in terms of the amount of movement of a conveying apparatus, based on the size of the region indicating the workpiece to be detected by using a relationship between the image capturing range of the image capturing unit and the physical length of the conveying apparatus.

Abstract: A solar battery cell including: a semiconductor substrate; front-surface asperities formed on the principal surface on a light-receiving side of the semiconductor substrate; a semiconductor layer having a conductive type and formed along the front-surface asperities; and an anti-reflection film formed on the light-receiving side of the semiconductor layer, a passivation film is formed on the principal surface on the back-surface side of the semiconductor substrate, and at least one opening is provided in the passivation film. A first back-surface electrode is formed on the passivation film so as to overlap the entire area occupied by the opening and to cover the opening, and a second back-surface electrode is formed on the passivation film so as to overlap the entire area occupied by the first back-surface electrode and to cover the first back-surface electrode.