Patents by Inventor Masahiro Funahashi
Masahiro Funahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8987044Abstract: The present invention provides a perylene tetracarboxylic acid bisimide derivative which enables the formation of an n-type semiconductor having high carrier mobility and has superior solubility. The perylene tetracarboxylic acid bisimide derivative is a perylene tetracarboxylic acid bisimide derivative represented by the following chemical formula (I), a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative, or a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer, In the chemical formula (I), R1 to R6 each represents a hydrogen atom, organooligosiloxane, or any substituent, at least one of R1 to R6 represents a monovalent substituent derived from organooligosiloxane, L1 and L2 each represents a single bond or a linking group, R7 to R10 each represents a lower alkyl group or a halogen, and o, p, q, and r each represents an integer from 0 to 2.Type: GrantFiled: April 4, 2012Date of Patent: March 24, 2015Assignee: National University Corporation Kagawa UniversityInventors: Masahiro Funahashi, Nozomi Takeuchi
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Publication number: 20140024171Abstract: The present invention provides a perylene tetracarboxylic acid bisimide derivative which enables the formation of an n-type semiconductor having high carrier mobility and has superior solubility. The perylene tetracarboxylic acid bisimide derivative is a perylene tetracarboxylic acid bisimide derivative represented by the following chemical formula (I), a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative, or a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer, In the chemical formula (I), R1 to R6 each represents a hydrogen atom, organooligosiloxane, or any substituent, at least one of R1 to R6 represents a monovalent substituent derived from organooligosiloxane, L1 and L2 each represents a single bond or a linking group, R7 to R10 each represents a lower alkyl group or a halogen, and o, p, q, and r each represents an integer from 0 to 2.Type: ApplicationFiled: April 4, 2012Publication date: January 23, 2014Applicant: NATIONAL UNIVERSITY CORPORATION KAGAWA UNIVERSITYInventors: Masahiro Funahashi, Nozomi Takeuchi
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Patent number: 7915609Abstract: According to the present invention, a liquid crystal semiconductor capable of exhibiting a highly ordered smectic phase at approximately room temperature, being used for formation of a smectic liquid crystal thin film that is stable at room temperature by a solution process, and showing excellent ambipolar charge-transporting properties, a thin film transistor comprising the same, and the like are provided. Also, the following are provided: a smectic liquid crystal compound represented by the following general formula (1) wherein R1 represents a straight-chain alkyl group having 1 to 8 carbon atoms, R2 represents an alkyl or alkoxy group having 1 to 8 carbon atoms, and ānā is an integer of 0 to 3; an ambipolar charge-transporting material comprising the smectic liquid crystal compound; an organic semiconductor thin film having a thin film layer comprising the smectic liquid crystal compound; and a thin film transistor comprising the organic semiconductor thin film.Type: GrantFiled: June 5, 2007Date of Patent: March 29, 2011Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Masahiro Funahashi, Fuxapei Chan, Nobuyuki Tamaoki
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Publication number: 20100237327Abstract: According to the present invention, a liquid crystal semiconductor capable of exhibiting a highly ordered smectic phase at approximately room temperature, being used for formation of a smectic liquid crystal thin film that is stable at room temperature by a solution process, and showing excellent ambipolar charge-transporting properties, a thin film transistor comprising the same, and the like are provided. Also, the following are provided: a smectic liquid crystal compound represented by the following general formula (1) wherein R1 represents a straight-chain alkyl group having 1 to 8 carbon atoms, R2 represents an alkyl or alkoxy group having 1 to 8 carbon atoms, and ānā is an integer of 0 to 3; an ambipolar charge-transporting material comprising the smectic liquid crystal compound; an organic semiconductor thin film having a thin film layer comprising the smectic liquid crystal compound; and a thin film transistor comprising the organic semiconductor thin film.Type: ApplicationFiled: June 5, 2007Publication date: September 23, 2010Applicant: NAT. INSTIUTE OF ADV. INDUSTRIAL SCI. AND TECH.Inventors: Masahiro Funahashi, Fuxapei Chan, Nobuyuki Tamaoki
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Patent number: 7405003Abstract: An organic semiconductor material, enabling to exhibit liquid crystal phase at wide temperature range including at least ordinary temperature and to exhibit high charge carrier mobility, and an organic semiconductor structure and organic semiconductor device formed from the organic semiconductor material. The organic semiconductor material has a quaterthiophene skeleton as shown in a following chemical formula 1, wherein R1 in the chemical formula 1 is an alkyl group of C1 to C20 or a hydrogen, and R2 is an alkyl group of C1 to C20 or a hydrogen.Type: GrantFiled: March 29, 2005Date of Patent: July 29, 2008Assignee: Dai Nippon Printing Co., Ltd.Inventors: Hiroki Maeda, Ken Tomino, Shigeru Sugawara, Masahiro Funahashi, Junichi Hanna
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Publication number: 20060076554Abstract: The object is to provide an organic semiconductor material, enabling to exhibit liquid crystal phase at wide temperature range including at least ordinary temperature and to exhibit high charge carrier mobility, and an organic semiconductor structure and organic semiconductor device formed from the organic semiconductor material. To achieve the object, the present invention provides an organic semiconductor material comprising a quaterthiophene skeleton shown in a following chemical formula 1, wherein R1 in the chemical formula 1 is an alkyl group of C1 to C20 or a hydrogen, and R2 is an alkyl group of C1 to C20 or a hydrogen.Type: ApplicationFiled: March 29, 2005Publication date: April 13, 2006Inventors: Hiroki Maeda, Ken Tomino, Shigeru Sugawara, Masahiro Funahashi, Junichi Hanna
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Patent number: 6720039Abstract: A liquid crystalline compound having a novel structure and a process for producing the same are provided. The liquid crystalline compound is represented by the following general formula (I): wherein R1 and R2 each independently represent a straight-chain, branched or cyclic, saturated or unsaturated hydrocarbon group having 1 to 22 carbon atoms and may be attached directly to the aromatic ring without through X1 or X2; R3 represents a hydrogen atom, a cyano group, a nitro group, a fluorine atom, or a methyl group; and X1 and X2 each independently represent an oxygen atom, a sulfur atom, or a —CO—, —OCO—, —COO—, —N═CH—, —CONH—, —NH—, —NHCO—, or —CH2— group.Type: GrantFiled: October 6, 2000Date of Patent: April 13, 2004Assignee: Dai Nippon Printing Co., Ltd.Inventors: Junichi Hanna, Masahiro Funahashi, Komei Kafuku, Kyoko Kogo
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Patent number: 6304159Abstract: A dielectric filter comprising a plurality of juxtaposed resonators provided within a dielectric ceramic block, an outer conductor layer provided on outer surface portions of the block with exception of an open-circuit end surface, and input/output pads provided on one lateral side surface of the block at respective positions close to the open-circuit end surface and opposite to the associated resonators, wherein a strip conductor member is provided transversely between the adjacent through holes on the first end surface of the block so that one end of the strip conductor member is connected to the outer conductor layer on one of a first and second lateral side surfaces of the block, and other end is separated from the other lateral side surface to form an open circuit end, whereby defining a non-conductive region between the open circuit end of the strip conductor member and the outer conductor layer on the other lateral side surface.Type: GrantFiled: December 10, 1999Date of Patent: October 16, 2001Assignee: NGK Spark Plug Co., Ltd.Inventors: Shoji Ono, Katsuhisa Murakami, Masahiro Funahashi
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Patent number: 6174455Abstract: A liquid crystalline compound having a novel structure and a process for producing the same are provided. The liquid crystalline compound is represented by the following general formula (I): wherein R1 and R2 each independently represent a straight-chain, branched or cyclic, saturated or unsaturated hydrocarbon group having 1 to 22 carbon atoms and may be attached directly to the aromatic ring without through X1 or X2; R3 represents a hydrogen atom, a cyano group, a nitro group, a fluorine atom, or a methyl group; and X1 and X2 each independently represent an oxygen atom, a sulfur atom, or a —CO—, —OCO—, —COO—, —N═CH—, —CONH—, —NH—, —NHCO—, or —CH2— group.Type: GrantFiled: February 18, 1998Date of Patent: January 16, 2001Assignee: Dai Nippon Printing Co., Ltd.Inventors: Junichi Hanna, Masahiro Funahashi, Komei Kafuku, Kyoko Kogo
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Patent number: 5980779Abstract: A process for producing a liquid crystalline compound represented by the following general formula (A): ##STR1##Type: GrantFiled: April 3, 1998Date of Patent: November 9, 1999Assignee: Dai Nippon Printing Co., Ltd.Inventors: Junichi Hanna, Masahiro Funahashi, Masanori Akada, Masayuki Ando, Yozo Kosaka
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Patent number: 5766510Abstract: A process for producing a liquid crystalline compound represented by the following general formula (A): ##STR1##Type: GrantFiled: August 22, 1996Date of Patent: June 16, 1998Assignee: Dai Nippon Printing Co., Ltd.Inventors: Junichi Hanna, Masahiro Funahashi, Masanori Akada, Masayuki Ando, Yozo Kosaka