Patents by Inventor Masahiro Funayama
Masahiro Funayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10112376Abstract: An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO2 substrates) are bonded at room-temperature to have practical bonding strength.Type: GrantFiled: May 9, 2016Date of Patent: October 30, 2018Assignees: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL, CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Jun Utsumi, Takayuki Goto, Kensuke Ide, Masahiro Funayama, Hideki Takagi
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Publication number: 20160250838Abstract: An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO2 substrates) are bonded at room-temperature to have practical bonding strength.Type: ApplicationFiled: May 9, 2016Publication date: September 1, 2016Applicants: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Jun UTSUMI, Takayuki GOTO, Kensuke IDE, Masahiro FUNAYAMA, Hideki TAKAGI
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Patent number: 8936998Abstract: A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.Type: GrantFiled: March 12, 2013Date of Patent: January 20, 2015Assignees: Mitsubishi Heavy Industries, Ltd., National Institute of Advanced Industrial Science and TechnologyInventors: Jun Utsumi, Takayuki Goto, Kensuke Ide, Hideki Takagi, Masahiro Funayama
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Patent number: 8608048Abstract: A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. In this case, it is preferable that the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.Type: GrantFiled: May 6, 2011Date of Patent: December 17, 2013Assignees: Mitsubishi Heavy Industries, Ltd., National Institute of Advanced Industrial Science and TechnologyInventors: Takayuki Goto, Jun Utsumi, Kensuke Ide, Hideki Takagi, Masahiro Funayama
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Patent number: 8602289Abstract: A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. Preferably, the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.Type: GrantFiled: September 6, 2007Date of Patent: December 10, 2013Assignees: Mitsubishi Heavy Industries, Ltd., National Institute of Advanced Industrial Science and TechnologyInventors: Takayuki Goto, Jun Utsumi, Kensuke Ide, Hideki Takagi, Masahiro Funayama
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Publication number: 20130213561Abstract: A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.Type: ApplicationFiled: March 12, 2013Publication date: August 22, 2013Inventors: Jun UTSUMI, Takayuki Goto, Kensuke Ide, Hideki Takagi, Masahiro Funayama
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Patent number: 8222724Abstract: An object is to provide a semiconductor element module having high reliability, superior electric connection and thermal connection and capable of securing sufficient cooling performance, and also to provide a method for manufacturing the same. The semiconductor element module (1) comprises an IGBT (2) and a diode (3) having electrodes formed on surfaces of both sides thereof, a ceramic substrate (7), in which thermal conductivity is high, having wiring circuit layers (4, 5) formed on the surface thereof for bonding to surfaces of one side of the IGBT (2) and the diode (3), a ceramic substrate (8), in which thermal conductivity is high, having a wiring circuit layer (6) formed on the surface thereof for bonding to surfaces of other side of the IGBT (2) and the diode (3), and a sealing member (11) which is sandwiched between the outer edges of the ceramic substrates (7, 8) for sealing inside thereof; and these members are bonded by room-temperature bonding.Type: GrantFiled: February 14, 2008Date of Patent: July 17, 2012Assignee: Mitsubishi Heavy Industries, Ltd.Inventors: Daishi Ueno, Taro Wada, Masahiro Funayama, Yoshikatsu Kuroda, Yuichi Kondo, Shinichi Kobayashi, Koji Nakano, Kenj Fujiwara, Teruo Takeshita
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Publication number: 20110214816Abstract: A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. In this case, it is preferable that the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.Type: ApplicationFiled: May 6, 2011Publication date: September 8, 2011Inventors: Takayuki Goto, Jun Utsumi, Kensuke Ide, Hideki Takagi, Masahiro Funayama
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Publication number: 20110062600Abstract: An object is to provide a semiconductor element module having high reliability, superior electric connection and thermal connection and capable of securing sufficient cooling performance, and also to provide a method for manufacturing the same. The semiconductor element module (1) comprises an IGBT (2) and a diode (3) having electrodes formed on surfaces of both sides thereof, a ceramic substrate (7), in which thermal conductivity is high, having wiring circuit layers (4, 5) formed on the surface thereof for bonding to surfaces of one side of the IGBT (2) and the diode (3), a ceramic substrate (8), in which thermal conductivity is high, having a wiring circuit layer (6) formed on the surface thereof for bonding to surfaces of other side of the IGBT (2) and the diode (3), and a sealing member (11) which is sandwiched between the outer edges of the ceramic substrates (7, 8) for sealing inside thereof; and these members are bonded by room-temperature bonding.Type: ApplicationFiled: February 14, 2008Publication date: March 17, 2011Inventors: Daishi Ueno, Taro Wada, Masahiro Funayama, Yoshikatsu Kuroda, Yuichi Kondo, Shinichi Kobayashi, Koji Nakano, Kenj Fujiwara, Teruo Takeshita
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Publication number: 20100276723Abstract: A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.Type: ApplicationFiled: October 14, 2008Publication date: November 4, 2010Applicant: MITSUBUISHI HEAVY INDUSTRIES, LTD.Inventors: Jun Utsumi, Takayuki Goto, Kensuke Ide, Hideki Takagi, Masahiro Funayama
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Publication number: 20100092786Abstract: An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO2 substrates) are bonded at room-temperature to have practical bonding strength.Type: ApplicationFiled: May 30, 2007Publication date: April 15, 2010Applicants: MITSUBISHI HEAVY INDUSTRIES, LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Jun Utsumi, Takayuki Goto, Kensuke Ide, Masahiro Funayama, Hideki Takagi
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Publication number: 20100000663Abstract: A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. In this case, it is preferable that the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.Type: ApplicationFiled: September 6, 2007Publication date: January 7, 2010Inventors: Takayuki Goto, Jun Utsumi, Kensuke Ide, Hideki Takagi, Masahiro Funayama
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Patent number: 4721777Abstract: Virus-contaminated immunoglobulin can be virus-inactivated by heating it in a substantially dry state at a temperature of 30.degree. to 100.degree. C. for a period of time sufficient for inactivating virus with maintaining original activity of the immunoglobulin. The addition of glycine, sodium chloride, sodium acetate, polyethylene glycol, albumin or mannitol enhances the effect and gives good solubility and good state to the solution of the virus-inactivated immunoglobulin.Type: GrantFiled: September 23, 1985Date of Patent: January 26, 1988Assignee: The Green Cross CorporationInventors: Yahiro Uemura, Katuhiro Uriyu, Tsuyoshi Takahashi, Takashi Goto, Masahiro Funayama, Masayuki Nishida, Tadakazu Suyama