Abstract: In this production method of a thin film device, a thin film is formed by discharging a liquid material from a nozzle in a deposition chamber to coat the liquid material onto a substrate. The substrate is then subjected to heat treatment by a first heat treatment unit and a second heat treatment unit, thereby improving the crystallinity and fitness of the film as well as its adhesion with other films.

Abstract: A method for manufacturing a photoelectric transducer, comprising: forming a first electrode on a substrate; forming a first conductivity-type semiconductor layer on the first electrode; forming an I type semiconductor layer on the first conductivity-type semiconductor layer; forming on the I type semiconductor layer a second conductivity-type semiconductor layer that is different from the first conductivity-type; and forming a second electrode on the second conductivity-type semiconductor layer, wherein the forming of the I type semiconductor layer includes: forming a precursor film of the I type semiconductor layer on the first conductivity-type semiconductor layer by arranging droplets containing a silicon compound in an island shape; and converting the precursor film into the I type semiconductor layer by carrying out heat treatment or photoirradiation treatment to the precursor film.

Abstract: A photoelectric conversion device includes a plurality of photoelectric conversion regions disposed over a substrate, and a colored region disposed among the photoelectric conversion regions over the substrate, the colored region forming an image over the substrate.

Abstract: A metal particle dispersion liquid compries: a compound including a sulfur atom; metal particles whose diameter ranges from 1 to 100 nm and made of a material including a precious metal material; and a dispersion medium. The metal particles is covered by the compound.

Abstract: There is provided a transistor and a method of manufacturing this transistor that allow a high degree of freedom when designing a wiring structure and also allow an improvement in product quality to be achieved. The transistor includes a source area, a drain area, and a channel area, each of which are formed by semiconductor films, and also a gate insulating film and a gate electrode. The semiconductor film containing the source area and the semiconductor film containing the drain area are formed separately sandwiching both sides of an insulating member. The semiconductor film containing the channel area is formed on top of the insulating member.

Abstract: The invention provides a method for forming a film pattern, in which a method for forming a film pattern by the ink-jet method is improved, an increase in film thickness is achieved efficiently with simple steps, a requirement for a decrease in line width is met and, in addition, problems such as breaks and short circuits are not brought about when a conductive film is made. The method can include a first discharging step, wherein droplets are discharged in the whole film formation region with a pitch larger than the diameter of the droplet after being hit onto the substrate. In the second discharging step, droplets are discharged at positions in the whole film formation region different from the discharge positions in the first discharging step with the same pitch as that in the first discharging step. In the third discharging step, droplets are discharged in the whole film formation region with a pitch smaller than the pitch in the first discharging step.

Abstract: A method for manufacturing an organic thin film element that includes an organic thin film between a pair of thin film electrodes and at least one electrode being a transparent electrode includes forming a transparent electrode by spraying a material liquid containing a transparent electrode formation material on a base material, and forming an organic thin film on the transparent electrode. This method allows for the manufacture of the organic thin film element by which an organic thin film element with high light-extraction efficiency is simply provided. A method for manufacturing an electro-optic device and a method for manufacturing electronic equipment that utilize the method for manufacturing an organic thin film element are described.

Abstract: A method of manufacturing an organic thin film element including an organic thin film between a pair of thin film electrodes with at least one transparent electrode includes forming the transparent electrode by atomizing a material liquid containing a transparent-electrode forming material onto a base material; and forming the organic thin film on the transparent electrode. The organic thin film element is capable of simply providing an organic thin film element having a long element life. A method of manufacturing an electro-optic device as well as a method of manufacturing electronic equipment by using the above method are described.

Abstract: A method and an apparatus for manufacturing a device are provided. The method and the apparatus can form micro wiring without undesired wetting and spreading using an inexpensive functional-liquid supplying method. A method for forming a device, such as a radiofrequency identification tag, includes: making patterns at a plurality of sections having different degrees of affinity to the functional liquid on a substrate to form the device; and supplying the functional liquid to the selected section having high affinity to the functional liquid. Forming the plurality of sections having different degrees of affinity to the functional liquid includes, for example: supplying an organosiloxane film on the substrate, and exposing the organosiloxane film through an optical mask.

Abstract: A method and an apparatus for manufacturing a device are provided. The method and the apparatus can form micro wiring without undesired wetting and spreading using an inexpensive functional-liquid supplying method. A method for forming a device, such as a radiofrequency identification tag, includes: making patterns at a plurality of sections having different degrees of affinity to the functional liquid on a substrate to form the device; and supplying the functional liquid to the selected section having high affinity to the functional liquid. Forming the plurality of sections having different degrees of affinity to the functional liquid includes;, for example: supplying an organosiloxane film on the substrate, and exposing the organosiloxane film through an optical mask.

Abstract: A pixel portion 100 of a liquid crystal display device includes a thin film transistor T including a gate electrode 13, a gate insulating film 16, a channel region 18, and source/drain regions 22, a source line (data) 26 for supplying current to the thin film transistor T and a pixel electrode 24. In the formation of a pixel circuit 100, a gate electrode 13, a gate insulating film 16, and the channel region 18 are firstly formed on a glass substrate 10. After the formation of the channel region 18 and the like, a polyimide film 20 surrounding the peripheries of the regions to be provide with the source/drain regions 22, the pixel electrode 24 and the source line 26 on a glass substrate 10 is formed. The regions surrounded with the wall of the polyimide film 20 are applied with a liquid material and subjected to a thermal treatment, thereby forming the element of the source/drain regions 22 and the like.

Abstract: A method of manufacturing a device comprising individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, comprising: a step of applying a liquid material to form an applied film; and a heat treatment and/or a light irradiating treatment of making the applied film into the silicon film, wherein, as the liquid material, a high-order silane composition comprising a high-order silence formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.

Abstract: A device comprising a semiconductor film (12) formed on a substrate (11), a gate region (15), in which a gate insulating film (13) formed on the semiconductor film and a gate electrode film (14) are laminated, isolation means (A) formed on both sides of the gate region to prevent contact between the gate electrode film and other regions, and a source region and a drain region formed by baking a liquid semiconductor material (17) and disposed on regions on the substrate and on both sides of the gate region.

Abstract: There is provided a transistor and a method of manufacturing this transistor that allow a high degree of freedom when designing a wiring structure and also allow an improvement in product quality to be achieved. The transistor includes a source area, a drain area, and a channel area, each of which are formed by semiconductor films, and also a gate insulating film and a gate electrode. The semiconductor film containing the source area and the semiconductor film containing the drain area are formed separately sandwiching both sides of an insulating member. The semiconductor film containing the channel area is formed on top of the insulating member.

Abstract: Provided is a method of forming a silicon thin-film which comprises a step of arranging in one or more parts of a liquid arranging surface liquid which contains a silicide comprising ring silane and/or a derivative thereof, such ring silane comprising silicon and hydrogen, and a step of forming a silicon thin-film by vaporizing silicide from liquid and supplying the silicide to a thin-film-forming surface.

Abstract: It is an object of the present invention to provide a method for fixing a functional material with good accuracy in a prescribed position on a fixing surface. In order to attain this object, the present invention provides a method for fixing a functional material, comprising a droplet ejection step of ejecting a droplet of a functional material dispersed in a solvent onto a fixing surface, and a drying step of locally heating the droplet ejected on the fixing surface and gasifying part of the droplet by irradiating the droplet with a laser beam. According to this method, the droplet can be dried rapidly, heating of the entire substrate is suppressed, and loss of alignment or breakage of wiring or the like caused by the expansion of substrate can be avoided.

Abstract: The present invention provides a method for forming a thin film using a CVD process in which a large-scale vacuum exhaust unit or neutralization unit is not required, and a patterning step after the formation of the film is not required. A pattern formed of a monolayer is formed using (heptadecafluoro-1,1,2,2-tetrahydro)decyl-triethoxysilane on a surface to form a thin film of a second glass substrate. Droplets formed of trimethylaluminum are placed on a plurality of parts of an upper surface of a first substrate. The droplets are placed at the positions corresponding to openings of the monolayer pattern. Both substrates are placed in parallel with a predetermined distance therebetween, and the openings and the droplets are aligned with each other. While supplying nitrogen gas between the substrates, the second substrate is heated to 300° C. and retained for 5 minutes. Thereby, the droplets are vaporized and the gas is fed into the openings.

Abstract: A method for forming a high quality conductive film pattern having an accuracy on the order of microns by simple steps is provided. A lyophilic region and a lyophobic region are formed on a predetermined pattern using an organic molecular film on a surface of a substrate, and after a solution dispersed with conductive fine particles is selectively applied to the lyophilic region, the solution applied to the lyophilic region is converted into a conductive film by a heat treatment, and a conductive film is formed on only the lyophilic region.

Abstract: [Object] To provide an electro-optical device and an electronic apparatus comprising the electro-optical device capable of solving non-uniformity in electrical resistance in fixing portions and of causing no display problem such as deterioration of contrast, etc., by making pressing conditions of a display substrate and a relay substrate be equal all over the fixing portions.

Abstract: In this production method of a thin film device, a thin film is formed by discharging a liquid material from a nozzle in a deposition chamber to coat the liquid material onto a substrate. The substrate is then subjected to heat treatment by a first heat treatment unit and a second heat treatment unit, thereby improving the crystallinity and fitness of the film as well as its adhesion with other films.