Abstract: The rotation sensor (10) has a cylindrical first rotor (11) made of an insulating magnetic material, having conductor layers (11a) arranged circumferentially, the first rotor being attached to a rotating first shaft (5a) at a predetermined axial position; a fixed core (12) having an exciting coil (12b), the core being fixed to a fixing member with a space secured in the axial direction with respect to the first shaft; a second rotor (13) having nonmagnetic metal bodies (13b) arranged circumferentially to oppose the conductor layers respectively, the second rotor being attached to a second shaft located adjacent to and rotating relative to the first shaft (5a) and being located between the first rotor (11) and the fixed core (12); and oscillating device connected to the exciting coil (12b), the oscillating device transmitting an oscillation signal of a specific frequency.

Abstract: This invention relates to a rotating connector comprising an inner cylinder 2 and an outer cylinder 3 combined together to permit the relative rotation in a concentric state, and a flat cable 1 spirally housed in an annular space 20 formed between the inner cylinder 2 and the outer cylinder 3, and connected at its inner end to the inner cylinder 2 while being connected at its outer end to the outer cylinder 3, wherein the flat cable 1 is composed of a plurality of flat-type conductors 10 placed in parallel arrangement and an insulating coat layer 11 placed over the flat-type conductors 10, and the insulating coat layer 11 is formed by coating the flat-type conductor 10 with a thermoplastic resin by means of direct extrusion.

Abstract: A process for fabricating a MOS semiconductor transistor which includes a first oxide film on a semiconductor substrate and on a surface of a gate electrode formed on the semiconductor substrate with intervention of a gate insulating film, a nitride film on the first oxide film and a sidewall spacer of a second oxide film formed on a side of the gate electrode with intervention of the first oxide film and the nitride film, the process comprising the steps of: forming, on the nitride film, a photoresist mask which has an opening in a device formation region; implanting impurity ions through the nitride film and the first oxide film into the semiconductor substrate in a high concentration using the gate electrode, the sidewall spacer and the photoresist mask as a mask; selectively removing the sidewall spacer from the device formation region by wet etching; implanting impurity ions into the semiconductor substrate in a low concentration using the gate electrode and the photoresist mask as a mask, thereby formin

Abstract: One end of a current source transistor is connected to a standard power source (VDD), and the gate of the first current source transistor is applied with a bias potential B1 for stabilizing fluctuations in current. The gate of a current source transistor is connected to the other end of the current source transistor, and the other end of the current source transistor is connected to GND. Output NMOS transistors are connected in series between the current source transistors. Output NMOS transistors are connected in series between the current source transistors, while the output NMOS transistors are connected in parallel with said the output NMOS transistors. An output terminal is provided between the output NMOS transistors, and an output terminal is provided between the output NMOS transistors. A terminal resistance is provided between the output terminals. Output NMOS transistors and NMOS transistors, which compose clamp circuits, are provided at both ends of the terminal resistance.

Abstract: A rotation sensor (10) provided with a first rotor (11) fixed to a predetermined position in the axial direction of the shaft, a second rotor (12) fixed to the shaft (5) adjoining the first rotor, and a magnetic material core (13) having a resonance coil (13c) arranged around the first rotor and forming a magnetic circuit working with the first rotor. The first rotor (11) is formed by a magnetic material comprised of an insulator, an irregular magnetic field is formed with the magnetic material core, and the second rotor (12) is provided with a conductor cutting across areas of different intensities of the irregular magnetic field in accordance with the difference of the angle of rotation when a difference in the angle of relative rotation occurs at a shaft position where the first rotor is fixed and a shaft position where the second rotor is fixed.

Abstract: A masked ROM of a flat cell structure has a plurality of bit-line diffusion layers formed in parallel in one direction in a semiconductor. substrate, a plurality of word lines formed on the bit-line diffusion layers orthogonally to the bit-line diffusion layers and channel regions between the bit-line diffusion layers beneath the word lines, wherein the word line is composed of a laminated layer of a first conductive layer and a second conductive layer on the channel regions and composed of the second conductive layer on the bit-line diffusion layers.

Abstract: A sputtering target of a single crystal aluminum alloy which has a uniform concentration distribution of an added metal element and a controlled crystal orientation is prepared using a continuous casting apparatus equipped with a starting rod by solidifying a melt of aluminum having a purity of at least 99.9 wt. % which contains 0.1 to 3.0 wt. % of at least one metal element selected from the group consisting of elements having atomic numbers of 3 to 83, at a casting temperature of 670 to 850.degree. C. at a casting rate of 1 to 80 mm/min. in one direction with maintaining an angle between a center axis of a continuous casting mold and a direction of pulling a casting material at 2 degrees or less.

Abstract: A sputtering target of a single crystal aluminum alloy which has a uniform concentration distribution of an added metal element and a controlled crystal orientation is prepared using a continuous casting apparatus equipped with a starting rod by solidifying a melt of aluminum having a purity of at least 99.9 wt. % which contains 0.1 to 3.0 wt. % of at least one metal element selected from the group consisting of elements having atomic numbers of 3 to 83, at a casting temperature of 670 to 850.degree. C. at a casting rate of 1 to 80 m/min. in one direction with maintaining an angle between a center axis of a continuous casting mold and a direction of pulling a casting material at 2 degrees or less.

Abstract: A semiconductor device comprises a semiconductor substrate formed with at least one well containing impurity ions of either a first conductivity type or a second conductivity type; a plurality of transistors each having a gate insulation film formed on the well, a gate electrode formed on the gate insulation film and a pair of diffusion layers formed in the well; and an outer diffusion layer of the same conductivity type as that of the well and self-aligned with each of the diffusion layers in an outer periphery thereof within the well; the outer diffusion layer having an impurity concentration sufficient to provide a desired junction withstand voltage and having substantially the same width as that of a depletion layer to be generated when an operational voltage is applied to the corresponding transistor; the impurity of the well being set for a concentration such that a threshold voltage of a parasitic transistor appearing below the gate electrode connecting adjacent transistors is higher than a power suppl

Abstract: A method for fabricating a semiconductor device is provided, which includes the steps of: (i-a) forming at least one impurity region of a first conductivity type in a semiconductor substrate; (ii-a) forming a gate insulation film and a gate electrode on the impurity region of the first conductivity type followed by the formation of impurity diffusion layers of a second conductivity type in self-alignment with the gate electrode to yield plurality of transistors; (iii-a) forming low-concentration impurity layers of the second conductivity type in peripheral portions of the impurity diffusion layers of the second conductivity type; and (iv-a) implanting impurity ions of the first conductivity type into desired regions between the plurality of transistors to form device isolation regions, whereby converting at least a part of the low-concentration impurity layers of the second conductivity type to a low-concentration impurity layers of the first conductivity type.

Abstract: A semiconductor device comprises a semiconductor substrate formed with at least one well containing impurity ions of either a first conductivity type or a second conductivity type; a plurality of transistors each having a gate insulation film formed on the well, a gate electrode formed on the gate insulation film and a pair of diffusion layers formed in the well; and an outer diffusion layer of the same conductivity type as that of the well and self-aligned with each of the diffusion layers in an outer periphery thereof within the well; the outer diffusion layer having an impurity concentration sufficient to provide a desired junction withstand voltage and having substantially the same width as that of a depletion layer to be generated when an operational voltage is applied to the corresponding transistor; the impurity of the well being set for a concentration such that a threshold voltage of a parasitic transistor appearing below the gate electrode connecting adjacent transistors is higher than a power suppl

Abstract: Disclosure is a method for producing a cryostatic stabilizer composed of high-purity aluminum which comprises extruding the high-purity aluminum at an extrusion temperature of 250.degree. to 500.degree. C., an extrusion speed of not more than 20 m/min and an extrusion ratio of 10 to 150 by using an extruding machine equipped with a cylindrical die having helical grooves or projections on the inner surface. The method is industrially advantageous.

Abstract: Disclosed is a transmission apparatus comprising an outer casing, an inner casing relatively rotatable to the outer casing, a flexible cable of which one end is connected to the inside surface of the outer casing and the other end is connected to the outside surface of the inner casing, a guide ring having at part of its circumferential direction a cut-out portion, which is attached for sliding between the outer casing and the inner casing and a resilient portion provided with the guide ring, which presses the flexible cable against the inside surface of the outer casing or the outside surface of the inner casing. The flexible cable has a reversing portion through the cut-out portion of the guide ring to be wound in one direction around the outside surface of the inner casing and wound in the reverse direction between the guide ring and the outer casing.

Abstract: A transmission device is equipped with a flat cable (11) which has a winding direction reversal section (11a) at the middle, and three dummy cables (21A through 21C) which are wrapped over the flat cable, the winding direction reversal sections (11a and 21a through 21c) of the flat cable and dummy cables being arranged in the circumferential direction at approximately equal intervals. The winding direction reversal sections which produce elastic reaction forces are distributed in the circumferential direction at approximately equal intervals, and hence the slack of the flat cable is suppressed when an inner case or an outer case performs reciprocal rotation, thus securely preventing troubles caused by the slack in the flat cable, whereby the possible case revolution number can be increased with a shorter flat cable, and the operation stability of the transmission device can be improved.

Abstract: A process for preparing erythromycin A oxime or a salt thereof which comprises reacting erythromycin A with hydroxylamine using an acid, is disclosed. Erythromycin A oxime and the salts thereof are useful as intermediates for the synthesis of macrolide antibiotics.

Abstract: A rotary connector which comprises a rotating case and a stationary case combined for rotation and defining an annular space therein, a flexible flat cable housed in the form of a spiral in the annular space, and a fixing member for regulating the relative rotation of the two cases. The fixing member is removably mounted extending between mounting portions formed individually on the cases, the flat cable tightening and loosening so that the rotating case is allowed to rotate relatively to the stationary case. The fixing member is provided integrally with an indicating portion for restraining the fixing member from being disengaged from the mounting portions and indicating the release of the cases from fixation by being fractured or deformed by a predetermined stress which forces the fixing member to be disengaged from the mounting portions.

Abstract: A rotary connector for connecting a steering device operable through a steering wheel to a vehicle body side, which includes a rotatable case mounted to the steering device and provided with a cancel cam for restoring a combination switch, a fixed case combined with the rotatable case, and a flat cable spirally wound and housed in the fixed and rotatable cases, the flat cable having inner and outer ends extended to outside through outlet portions formed in corresponding ones of the rotatable and fixed cases, wherein loosening and tightening of the flat cable permit a predetermined number of rotations of the rotatable case relative to the fixed case. In this rotary connector, the outlet portion for extending the inner end of the flat cable therethrough to the outside comprises at least two outlet portions for a left-hand steering wheel and a right-hand steering wheel located in different positions of the rotatable case.

Abstract: A method for manufacturing a semiconductor device including steps of (i) laminating a first insulating film over a semiconductor substrate having a plurality of gate electrodes, on which side walls are at least formed, through capacitor formation regions, removing the first insulating film in the capacitor formation region so as to form a direct contact, and laminating a first conductive film over the semiconductor substrate including the residual first insulating film, (ii) removing the first conductive film with remaining at least in the capacitor formation region, (iii) sequentially laminating over the semiconductor substrate including the residual first conductive film (a) a second insulating film, a second conductive film and a third insulating film, or (b) a second insulating film and a second conductive film, and then laminating a resist layer over the whole surface, and (iv) patterning the resist layer and removing with the use of a resist pattern (a) the third insulating film, second conductive film,

Abstract: A connector device in which at least one flexible transmission member is housed in a holding portion, which is defined by a fixed housing mounted on a stationary member and a movable housing mounted on a rotating member and rotatably combined with the fixed housing, and the stationary and rotating members are connected by means a transmission member. The flexible transmission member is coiled in a spiral pile around the axis of rotation of the two housings, turned back in the middle thereof, and coiled in a spiral pile in the opposite direction from a U-turn portion at which the transmission member is turned back. By doing this, the transmission member can be reduced in length.

Abstract: A helmet for use in riding vehicles such as motorcycles, motorbikes, etc. comprises a cap like body made of hard material, a bumping body applied on an inner surface of the cap like body, a number of streamline recesses formed in the bumping body and extending from a forehead portion to a backhead or side portion of the cap like body. When a user wears the helmet, the air stream flows through the recesses from the front openings to the rear openings of the recesses and thus the temperature and humidity inside the helmet are decreased.