Abstract: Provided is an OLED device 10 including a plurality of organic semiconductor layers sandwiched between a pair of electrodes 3 and 4. The organic semiconductor layers include a first organic semiconductor layer 1 containing a first organic semiconductor material, and a second organic semiconductor layer 2 containing a second organic semiconductor material and a third organic semiconductor material, the first organic semiconductor layer and the second organic semiconductor layer form a joining surface, and the first organic semiconductor material and the second organic semiconductor material satisfy requirement and the like relating to a predetermined energy level.

Abstract: A blue color photoelectric conversion film includes: a p-type layer formed by depositing tetracene; a p,n-type layer formed by co-depositing tetracene and naphthalene-tetracarboxylic-dianhydride (“NTCDA”) on the p-type layer; and an n-type layer formed by depositing NTCDA on the p,n-type layer.

Abstract: A blue color photoelectric conversion film includes: a p-type layer formed by depositing tetracene; a p,n-type layer formed by co-depositing tetracene and naphthalene-tetracarboxylic-dianhydride (“NTCDA”) on the p-type layer; and an n-type layer formed by depositing NTCDA on the p,n-type layer.

Abstract: A blue color photoelectric conversion film includes: a p-type layer formed by depositing tetracene; a p,n-type layer formed by co-depositing tetracene and naphthalene-tetracarboxylic-dianhydride (“NTCDA”) on the p-type layer; and an n-type layer formed by depositing NTCDA on the p,n-type layer.

Abstract: Provided are an organic photoelectric conversion film, and a photoelectric conversion device and an image sensor each having the organic photoelectric conversion film. The organic photoelectric conversion film includes a p-type material layer formed of an organic material; and a n-type material layer formed on the p-type material layer, the n-type material being formed from naphthalene-1,4,5,8-tetracarboxylic dianhydride (NTCDA).

Abstract: Provided are an organic photoelectric conversion film and a photoelectric conversion device having the organic photoelectric conversion film. The organic photoelectric conversion film includes a p-type substance layer including rubrene and an n-type substance layer formed on the p-type substance layer and including fullerene or fullerene derivative.

Abstract: A NTCDA single crystal is used as a photoelectric current multiplier layer, and Au thin films are formed as electrodes on the opposite surfaces of the multiplier layer by a vapor deposition method to form a sandwich type cell. When a voltage is applied to the NTCDA single crystal by the electrodes from a dc power source and a monochromatic light is applied, a multiplied photoelectric current flows between the electrodes. A rise of this element at light-on is considerably faster than when a vapor-deposited layer is used as a photoelectric current multiplier layer to permit a faster response.

Abstract: Organic semiconductor layers (2, 4) are laminated sandwiching an insulator thin layer (3), and translucent electrodes (1, 5) are formed on the surfaces of the organic semiconductor layers (2, 4), respectively. While a voltage is applied so that the electrode (1) is positive with respect to the electrode (5) and the opposite surfaces of the device are irradiated with two lights (6, 7) simultaneously, photocurrent multiplication is occurred to allow a photocurrent to flow in the device. However, no photocurrent multiplication occurs to allow no flow of photocurrent when the device is irradiated with one of the lights (6, 7).

Abstract: A NTCDA single crystal is used as a photoelectric current multiplier layer, and Au thin films are formed as electrodes on the opposite surfaces of the multiplier layer by a vapor deposition method to form a sandwich type cell. When a voltage is applied to the NTCDA single crystal by the electrodes from a dc power source and a monochromatic light is applied, a multiplied photoelectric current flows between the electrodes. A rise of this element at light-on is considerably faster than when a vapor-deposited layer is used as a photoelectric current multiplier layer to permit a faster response.

Abstract: A NTCDA single crystal is used as a photoelectric current multiplier layer, and Au thin films are formed as electrodes on the opposite surfaces of the multiplier layer by a vapor deposition method to form a sandwich type cell. When a voltage is applied to the NTCDA single crystal by the electrodes from a dc power source and a monochromatic light is applied, a multiplied photoelectric current flows between the electrodes. A rise of this element at light-on is considerably faster than when a vapor-deposited layer is used as a photoelectric current multiplier layer to permit a faster response.

Abstract: An extremely thin single-crystal is sandwiched between two electrodes. In a preferred embodiment, the extremely thin single-crystal is prepared by slicing a needle molecular crystal of Me-PTC perpendicularly to the major axis of the crystal, wherein molecular planes are perpendicular to a flat plane of the crystal and the molecular planes are stacked, that is, the direction combining ? electron clouds is parallel to the flat plane. When the single-crystal is irradiated with light under the situation where a high electric field is applied to the single-crystal by using a power unit, photocurrent multiplied by the avalanche phenomenon flows.

Abstract: An indium electrode film (2) is formed closely adhering to one face of an organic semiconductor film (1) made of copper phthalocyanine while a gold electrode film (3) is formed on the other face. A voltage is applied to the organic semiconductor film (1) so that the indium electrode (2) side is biased positively. By applying a voltage so that the electrode (2) side is charged positively and irradiating with a light having a wavelength absorbable by the organic semiconductor film (1) the phenomenon of photocurrent multiplication arises at the interface of the organic semiconductor film (1) and the electrode (2). When put under an oxygen or moisture atmosphere in the above state, this gas sensor can detect oxygen or moisture depending on a change in photocurrent due to the multiplication.

Abstract: A resin-dispersed organic semiconductor layer (3) is formed on a lower electrode (2) of an ITO transparent electrode formed on a glass substrate (1). An upper electrode (4) of a gold deposited film is formed on the resin-dispersed organic semiconductor layer (3). The resin-dispersed organic semiconductor layer (3) is formed by spin-coating a dispersion liquid prepared by mixing a perylene pigment and polycarbonate in a THF solvent and drying the coating. By applying a voltage by means of the electrodes (2, 4) and by irradiating the resin-dispersed organic semiconductor layer (3) with light, a multiplied light irradiation-induced current flows.

Abstract: A NTCDA single crystal is used as a photoelectric current multiplier layer, and Au thin films are formed as electrodes on the opposite surfaces of the multiplier layer by a vapor deposition method to form a sandwich type cell. When a voltage is applied to the NTCDA single crystal by the electrodes from a dc power source and a monochromatic light is applied, a multiplied photoelectric current flows between the electrodes. A rise of this element at light-on is considerably faster than when a vapor-deposited layer is used as a photoelectric current multiplier layer to permit a faster response.

Abstract: A longitudinally coupled surface acoustic wave resonator filter includes first and second interdigital transducers (IDTs) disposed on a quartz substrate and reflectors located on both sides of an area in which the first and second IDTs are located. A distance L1 between the centers of the adjacent electrode fingers of the first and second IDTs satisfies equation (1): (0.35+n/2)&lgr;<L1<(0.55+n/2)&lgr;  (1) where n=0, 1, 2, 3 . . . , and the distance L2 between the center of the innermost electrode fingers of the reflectors and the center of the outermost electrode fingers of the adjacent IDTs satisfies equation (2): (0.10+m/2)&lgr;<L2<(0.40+m/2)&lgr;  (2) where m=0, 1, 2, 3 . . . .

Abstract: Organic semiconductor layers (2, 4) are laminated sandwiching an insulator thin layer (3), and translucent electrodes (1, 5) are formed on the surfaces of the organic semiconductor layers (2, 4), respectively. While a voltage is applied so that the electrode (1) is positive with respect to the electrode (5) and the opposite surfaces of the device are irradiated with two lights (6, 7) simultaneously, photocurrent multiplication is occurred to allow a photocurrent to flow in the device. However, no photocurrent multiplication occurs to allow no flow of photocurrent when the device is irradiated with one of the lights (6, 7).

Abstract: An indium electrode film (2) is formed closely adhering to one face of an organic semiconductor film (1) made of copper phthalocyanine while a gold electrode film (3) is formed on the other face. A voltage is applied to the organic semiconductor film (1) so that the indium electrode (2) side is biased positively. By applying a voltage so that the electrode (2) side is charged positively and irradiating with a light having a wavelength absorbable by the organic semiconductor film (1) the phenomenon of photocurrent multiplication arises at the interface of the organic semiconductor film (1) and the electrode (2). When put under an oxygen or moisture atmosphere in the above state, this gas sensor can detect oxygen or moisture depending on a change in photocurrent due to the multiplication.

Abstract: A resin-dispersed organic semiconductor layer (3) is formed on a lower electrode (2) of an ITO transparent electrode formed on a glass substrate (1). An upper electrode (4) of a gold deposited film is formed on the resin-dispersed organic semiconductor layer (3). The resin-dispersed organic semiconductor layer (3) is formed by spin-coating a dispersion liquid prepared by mixing a perylene pigment and polycarbonate in a THF solvent and drying the coating. By applying a voltage by means of the electrodes (2, 4) and by irradiating the resin-dispersed organic semiconductor layer (3) with light, a multiplied light irradiation-induced current flows.

Abstract: A longitudinally coupled surface acoustic wave resonator filter includes first and second interdigital transducers (IDTs) disposed on a quartz substrate and reflectors located on both sides of an area in which the first and second IDTs are located.

Abstract: A surface acoustic wave resonator filter has a wide bandwidth, a low insertion loss characteristic and a sharp attenuation characteristic at edges of the passband. The surface acoustic wave resonator filter includes first and second longitudinally coupled resonator filters disposed on a piezoelectric substrate. The first and second longitudinally coupled resonator filters each have first, second, and third resonance modes. The phases of the output signals of the first and second longitudinally coupled resonator filters are opposite to each other for an input signal at frequencies higher than the passband. The difference in frequency between the first resonance mode of the first longitudinally coupled resonator filter and the first resonance mode of the second longitudinally coupled resonator filter is smaller than the difference in frequency between the first resonance mode and any other resonance modes in the first and second longitudinally coupled resonator filters.