Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film. The first capacitive electrode is made of less noble metal having a lower spontaneous potential than a metal constituting the second capacitive electrode. A minute defective portion existing in the capacitive insulating film is closed by an insulator derived from a metal constituting the first capacitive electrode.

Abstract: A dielectric device includes a first electrode, dielectric film, and second electrode, which are laminated. The dielectric film includes columnar crystals extending in a lamination direction. Provided that “x” denotes a reciprocal (1/?m) of a dielectric film thickness and “y” denotes a dielectric material average crystallite size (nm) calculated by the Scherrer equation, “x” and “y” are located within a quadrilateral having point A (0.10, 5), point B (10, 20), point C (10, 35), and point D (0.10, 10) as vertices. Alternatively, the columnar crystals have an average width of less than 40 nm within a distance range from one tenth to one third of the dielectric film thickness from one electrode to the other and an average width of 40 nm or more within a distance range from one tenth to one third of the dielectric film thickness from the other electrode to the one in the lamination direction.

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The lower electrode layer includes a first metal layer positioned on a side facing the dielectric layer and a second metal layer positioned on a side facing away from the dielectric layer. The first metal layer has a first surface positioned on a side facing the second metal layer and a second surface positioned on a side facing the dielectric layer. The first surface has a surface roughness higher than that of the second surface. The second metal layer reflects a surface property of the first surface.

Abstract: A thin film capacitor comprises a first electrode, a second electrode, and a dielectric substance disposed between the first electrode 10 and the second electrode. The second electrode has a first metallic layer, an intermediate layer, and a second metallic layer in sequence in this order from the side of the dielectric substance. The first metallic layer contains a metal element M1 as a main component, and the second metallic layer contains a metal element M2 different from the metal element M1 as a main component. The intermediate layer has one or more laminate structures each having a second metal sublayer containing the metal element M2 as a main component and a first metal sublayer containing the metal element M1 as a main component in sequence from the side of the first metallic layer toward the side of the second metallic layer.

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film. The first capacitive electrode is made of less noble metal having a lower spontaneous potential than a metal constituting the second capacitive electrode. A minute defective portion existing in the capacitive insulating film is closed by an insulator derived from a metal constituting the first capacitive electrode.

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The lower electrode layer includes a first metal layer positioned on a side facing the dielectric layer and a second metal layer positioned on a side facing away from the dielectric layer. The first metal layer has a first surface positioned on a side facing the second metal layer and a second surface positioned on a side facing the dielectric layer. The first surface has a surface roughness higher than that of the second surface. The second metal layer reflects a surface property of the first surface.

Abstract: A thin film capacitor includes a first electrode layer (10), a dielectric layer (20) stacked on the first electrode layer (10), and a second electrode layer (30) stacked on the dielectric layer (20), wherein the dielectric layer (20) includes a layered void aggregation region (22) which extends in a direction orthogonal to a stacking direction.

Abstract: A thin film capacitor comprises a first electrode, a second electrode, and a dielectric substance disposed between the first electrode 10 and the second electrode. The second electrode has a first metallic layer, an intermediate layer, and a second metallic layer in sequence in this order from the side of the dielectric substance. The first metallic layer contains a metal element M1 as a main component, and the second metallic layer contains a metal element M2 different from the metal element M1 as a main component. The intermediate layer has one or more laminate structures each having a second metal sublayer containing the metal element M2 as a main component and a first metal sublayer containing the metal element M1 as a main component in sequence from the side of the first metallic layer toward the side of the second metallic layer.

Abstract: A thin film capacitor comprises a first electrode, a second electrode, and a dielectric substance disposed between the first electrode 10 and the second electrode. The second electrode has a first metallic layer, an intermediate layer, and a second metallic layer in sequence in this order from the side of the dielectric substance. The first metallic layer contains a metal element M1 as a main component, and the second metallic layer contains a metal element M2 different from the metal element M1 as a main component. The intermediate layer has one or more laminate structures each having a second metal sublayer containing the metal element M2 as a main component and a first metal sublayer containing the metal element M1 as a main component in sequence from the side of the first metallic layer toward the side of the second metallic layer.

Abstract: Provided is a thin film capacitor that includes: a first electrode layer having a principal surface in which a plurality of recesses are provided; a dielectric layer laminated on the principal surface of the first electrode layer; and a second electrode layer laminated on the dielectric layer. When a depth of the recess is defined as FL and a thickness of the dielectric layer is defined as T, H/T is 0.05 or more and 0.5 or less.

Abstract: A thin-film capacitor includes a capacitor section in which electrode layers and dielectric layers are alternately stacked and which includes a hole portion that extends to the electrode layer. In a cross-section which is perpendicular to a stacking surface of the capacitor section and which passes through the hole portion, a side surface of the hole portion extends along a reference line extending in a direction intersecting the stacking surface, the dielectric layer extends up to the reference line toward the hole portion, and a gap is formed between the side surface of the pair electrode layer and the reference line.

Abstract: A thin film capacitor comprises a first electrode, a second electrode, and a dielectric substance disposed between the first electrode 10 and the second electrode. The second electrode has a first metallic layer, an intermediate layer, and a second metallic layer in sequence in this order from the side of the dielectric substance. The first metallic layer contains a metal element M1 as a main component, and the second metallic layer contains a metal element M2 different from the metal element M1 as a main component. The intermediate layer has one or more laminate structures each having a second metal sublayer containing the metal element M2 as a main component and a first metal sublayer containing the metal element M1 as a main component in sequence from the side of the first metallic layer toward the side of the second metallic layer.

Abstract: Provided is a thin film capacitor that includes: a first electrode layer having a principal surface in which a plurality of recesses are provided; a dielectric layer laminated on the principal surface of the first electrode layer; and a second electrode layer laminated on the dielectric layer. When a depth of the recess is defined as FL and a thickness of the dielectric layer is defined as T, H/T is 0.05 or more and 0.5 or less.

Abstract: A thin film capacitor includes a first electrode layer (10), a dielectric layer (20) stacked on the first electrode layer (10), and a second electrode layer (30) stacked on the dielectric layer (20), wherein the dielectric layer (20) includes a layered void aggregation region (22) which extends in a direction orthogonal to a stacking direction.

Abstract: A thin-film capacitor includes a capacitor section in which electrode layers and dielectric layers are alternately stacked and which includes a hole portion that extends to the electrode layer. In a cross-section which is perpendicular to a stacking surface of the capacitor section and which passes through the hole portion, a side surface of the hole portion extends along a reference line extending in a direction intersecting the stacking surface, the dielectric layer extends up to the reference line toward the hole portion, and a gap is formed between the side surface of the pair electrode layer and the reference line.

Abstract: This treatment planning device calculates position information for specific locations for a plurality of times corresponding to a time course on the basis of the positions of markers positioned in the vicinity of the specific locations, and generates a three-dimensional range for the specific locations for each of the plurality of times. In addition, the treatment planning device generates representative range information, which represents a range that includes the entire three-dimensional ranges for the specific locations for each of the plurality of times, tracks the position information for the specific locations for each of the plurality of times, and calculates the amount of radiation to be emitted in the range for the specific locations represented by representative range information when radiation is emitted for a prescribed time period in the range for the specific locations represented by the representative range information.

Abstract: A therapy planning device includes: a condition acquiring unit configured to acquire therapy conditions including a position of an affected area, a necessary dose for the affected area, and a threshold dose for an area other than the affected area; a first planning unit configured to plan a first irradiation of irradiating a first irradiation field including the entire affected area to radiation; and a second planning unit configured to make a therapy plan satisfying the therapy conditions in combination of the first irradiation planned by the first planning unit and irradiation of an irradiation field including only part of the affected area.

Abstract: A radiotherapy device controller includes: a visual line calculator configured to calculate a visual line based on a position on a transmissive image imaged using a radiation penetrating a subject, a specific part of the subject being shown at the position; a position calculator configured to calculate a position of the specific part based on a position of a trajectory of the specific part and a position of the visual line; and an emitter configured to control a radiation emitter that emits a therapeutic radiation, so that the therapeutic radiation penetrates at the position of the specific part.

Abstract: This treatment planning device calculates position information for specific locations for a plurality of times corresponding to a time course on the basis of the positions of markers positioned in the vicinity of the specific locations, and generates a three-dimensional range for the specific locations for each of the plurality of times. In addition, the treatment planning device generates representative range information, which represents a range that includes the entire three-dimensional ranges for the specific locations for each of the plurality of times, tracks the position information for the specific locations for each of the plurality of times, and calculates the amount of radiation to be emitted in the range for the specific locations represented by representative range information when radiation is emitted for a prescribed time period in the range for the specific locations represented by the representative range information.

Abstract: Provided is a technique for observing in real time the state of a disease condition in a tissue of an animal or the state of a functionally adverse condition which is a prelude to the disease condition without injuring the animal. This can be achieved by the use of a gene construct having a reporter gene integrated under the control of a hypoxia responsible promoter an ODD domain (oxygen dependent degradation domain) integrated upstream to the reporter gene.