Abstract: Disclosed is a plasma doping apparatus and a plasma doping method for performing a doping on a processing target substrate by implanting dopant ions into the processing target substrate. The plasma doping method includes a plasma doping processing performed on the processing target substrate held on a holding unit within a processing container by generating plasma using a microwave. The plasma doping method also includes an annealing processing which is performed on the processing target substrate which has been subjected to the plasma doping processing.

Abstract: A method and apparatus for doping a surface of a substrate with a dopant, with the dopant being for example phosphine or arsine. The doping is performed with a plasma formed primarily of an inert gas such as helium or argon, with a low concentration of the dopant. To provide conformal doping, preferably to form a monolayer of the dopant, the gas flow introduction location is switched during the doping process, with the gas mixture primarily introduced through a center top port in the process chamber during a first period of time followed by introduction of the gas mixture primarily through peripheral or edge injection ports for a second period of time, with the switching continuing in an alternating fashion as the plasma process.

Abstract: Disclosed is a plasma doping apparatus and a plasma doping method for performing a doping on a processing target substrate by implanting dopant ions into the processing target substrate. The plasma doping method includes a plasma doping processing performed on the processing target substrate held on a holding unit within a processing container by generating plasma using a microwave. The plasma doping method also includes an annealing processing which is performed on the processing target substrate which has been subjected to the plasma doping processing.

Abstract: Provided is a method for injecting a dopant into a substrate to be processed. A method in one embodiment of the present invention includes: (a) a step for preparing, in a processing container, a substrate to be processed; and (b) a step for injecting a dopant into the substrate by supplying a doping gas containing AsH3, an inert gas, and H2 gas to the inside of the processing container, and applying plasma excitation energy to the inside of the processing container. In the step of injecting the dopant, the ratio of hydrogen partial pressure to the gas total pressure in the processing container is set within the range of 0.0015-0.003.

Abstract: Disclosed is a plasma doping apparatus provided with a plasma generating mechanism. The plasma generating mechanism includes a microwave generator that generates microwave for plasma excitation, a dielectric window that transmits the microwave generated by the microwave generator into a processing container, and a radial line slot antenna formed with a plurality of slots. The radial line slot antenna radiates the microwave to the dielectric window. A control unit controls the plasma doping apparatus such that a doping gas and a gas for plasma excitation are supplied into the processing container by a gas supply unit in a state where the substrate is placed on a holding unit, and then plasma is generated by the plasma generating mechanism to perform doping on the substrate such that the concentration of the dopant implanted into the substrate is less than 1×1013 atoms/cm2.

Abstract: A plasma doping apparatus which performs doping by injecting dopants into a substrate to be processed. The apparatus includes a processing container, a gas supplying unit configured to supply a doping gas and an inert gas for plasma excitation into the processing container, a holding table configured to hold the substrate to be processed, a plasma generating mechanism configured to generate plasma in the processing container using a microwave, a pressure adjusting mechanism configured to adjust a pressure in the processing container, and a control unit configured to control the plasma doping apparatus. The control unit controls the pressure adjusting mechanism to set the pressure in the processing container to be equal to or more than 100 mTorr and less than 500 mTorr such that a plasma processing is performed on the substrate to be processed using the plasma generated by the plasma generating mechanism.

Abstract: A method and apparatus for doping a surface of a substrate with a dopant, with the dopant being for example phosphine or arsine. The doping is performed with a plasma formed primarily of an inert gas such as helium or argon, with a low concentration of the dopant. To provide conformal doping, preferably to form a monolayer of the dopant, the gas flow introduction location is switched during the doping process, with the gas mixture primarily introduced through a center top port in the process chamber during a first period of time followed by introduction of the gas mixture primarily through peripheral or edge injection ports for a second period of time, with the switching continuing in an alternating fashion as the plasma process.

Abstract: A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.

Abstract: Disclosed is a plasma doping apparatus provided with a plasma generating mechanism. The plasma generating mechanism includes a microwave generator that generates microwave for plasma excitation, a dielectric window that transmits the microwave generated by the microwave generator into a processing container, and a radial line slot antenna formed with a plurality of slots. The radial line slot antenna radiates the microwave to the dielectric window. A control unit controls the plasma doping apparatus such that a doping gas and a gas for plasma excitation are supplied into the processing container by a gas supply unit in a state where the substrate is placed on a holding unit, and then plasma is generated by the plasma generating mechanism to perform doping on the substrate such that the concentration of the dopant implanted into the substrate is less than 1×1013 atoms/cm2.

Abstract: Disclosed is a plasma doping apparatus including a processing chamber, a substrate holding unit, a plasma generating mechanism, a pressure control mechanism, a bias power supply mechanism, and a control unit. The control unit controls the pressure within the processing chamber to be a first pressure and controls the bias power to be supplied to the holding unit is to be a first bias power for a first plasma process. The control unit also controls the pressure within the processing chamber to be a second pressure which is higher than the first pressure, and controls the bias power to be supplied to the holding unit to be a second bias power which is lower than the first bias power for a second plasma process.

Abstract: In a film forming method, firstly, a processing target substrate W as a base of a semiconductor device is held on a mounting table 34 by an electrostatic chuck. Then, a film forming gas is adsorbed onto the processing target substrate W (a gas adsorption process) ((A) of FIG. 6). Thereafter, the inside of the processing chamber 32 is evacuated in order to remove residues of the film forming gas ((B) of FIG. 6). Upon the completion of the first exhaust process, a plasma process using microwave is performed ((C) of FIG. 6). Upon the completion of the plasma process, the inside of the processing chamber 32 is evacuated in order to remove an unreacted reactant gas and the like ((D) of FIG. 6). These series of steps (A) to (D) are repeated in this sequence until a desired film thickness is obtained.

Abstract: A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.

Abstract: Provided is a technology capable of obtaining a fluorine-containing carbon film having a good leakage property, coefficient of thermal expansion and mechanical strength. The fluorine-containing carbon film is formed by using active species obtained by activating a C5F8 gas and a hydrogen gas. Fluorine in the fluorine-containing carbon film comes off together with H so that the amount of F decreases, thereby accelerating the polymerization. As a result, a C-dangling bond in the fluorine-containing carbon is decreased and a leakage current is reduced. Further, as the polymerization accelerates, the film gets stronger, so that the fluorine-containing carbon film having a high mechanical strength such as a high elasticity or a high hardness can be obtained.

Abstract: A plasma doping apparatus implants an impurity element into a surface of a processing target object W by using plasma. The apparatus includes a high frequency power supply 72 configured to supply a high frequency bias power to a mounting table 34 installed within a processing chamber 32; a gas feed unit 96 configured to supply a doping gas containing an impurity element into the processing chamber 32; and a plasma generation unit 78 configured to generate the plasma within the processing chamber 32. In accordance with this apparatus, a portion doped with the impurity element can be made very thin, and the impurity element can be rapidly doped in a high concentration.

Abstract: Provided is a film forming method comprising: placing a substrate on a loading portion inside a processing chamber; supplying a gas for generating plasma, which is excited by microwaves, into the processing chamber; evacuating an inside of the processing chamber; supplying a C5F8 gas into the processing chamber; supplying microwaves into the processing chamber from a planar antenna member, which is disposed on an upper part of the processing chamber to face the loading portion and in which a plurality of slots are formed along a circumferential direction, and plasmatizing the gas inside the processing chamber; forming a fluorine-added carbon film on the substrate by the plasmatized gas; and applying a biasing high frequency power to the loading portion while forming the fluorine-added carbon film on the substrate so that the biasing high frequency power of 0.32 W/cm2 or less is applied on the substrate per unit area.

Abstract: A plasma film forming apparatus includes: a processing chamber; a mounting table for mounting thereon a target object; a ceiling plate which is installed at a ceiling portion and is made of a dielectric material; a gas introduction mechanism for introducing a processing gas including a film formation source gas and a supporting gas; and a microwave introduction mechanism which is installed at a ceiling plate's side and has a planar antenna member. The gas introduction mechanism includes: a central gas injection hole for the source gas, located above a central portion of the target object; and a plurality of peripheral gas injection holes for the source gas, arranged above a peripheral portion of the target object along a circumferential direction thereof. A plasma shielding member is installed above the target object and between the central gas injection hole and the peripheral gas injection holes along the circumferential direction thereof.

Abstract: A semiconductor device of the present invention is provided with a substrate; an insulating film made of a fluorine-containing carbon film and formed on the substrate; a copper wiring buried in the insulating film; and a barrier film formed between the insulating film and the copper wiring. The barrier film includes a first film made of titanium for suppressing a diffusion of fluorine, and a second film made of tantalum for suppressing a diffusion of copper and formed between the first film and the copper wiring.

Abstract: A deposition method includes steps of placing a substrate on a susceptor in a process chamber; supplying to the process chamber a source gas including an organic compound and a plasma gas for facilitating activation of the source gas into plasma; evacuating the process chamber to a reduced pressure; generating plasma of the plasma gas and the source gas in the process chamber to deposit a barrier film including carbon on the substrate; and applying high frequency bias electric power to the susceptor during the plasma generating step.

Abstract: An electrophotographic photoreceptor comprises a photoconductive layer having a protective layer disposed thereon, said protective layer being formed by dehydrocondensation of the hydrolyzate of a perfluoroalkyl silane coupling agent, or the hydrolyzate of a mixture of a perfluoroalkyl silane coupling agent and a silane coupling agent. The photoreceptor is very useful in that it can exhibit a high performance even in an environment at a higher temperature and at a higher humidity and that it has a high resistance to the abrasion with a great number of sheets being printed and with the cleaning members and that it is capable of preserving a high resolution without any image blurring.

Abstract: An electrophotographic photoreceptor comprises an electrically conductive support, a photoconductive layer provided thereon, and a protective layer coated on the photoconductive layer, wherein the protective layer comprises a product of uncatalized hydrolysis of a composition essentially consisting of at least one specific epoxysilane compound, at least one specific alkylalkoxysilane compound, and at least one specific aminosilane compound. The photoreceptor is very useful in that it is free from wear due to friction with paper and cleaning members, keeps high resolving power, and is sufficiently proof against continuous copying under conditions of high temperature and high humidity.