Abstract: An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

Abstract: Inside a furnace body with a vacuum environment or under the inert gas protection, the raw silicon material used to produce silicon carbide is melted or vaporized in a high temperature environment over 1300° C., and then the melted or vaporized raw silicon material will react with the carbonaceous gas or liquid to form silicon carbide. The present invention uses the carbonaceous gas with no metallic impurities, to replace petroleum coke, resin, asphalt, graphite, carbon fiber, coal, charcoal and some other carbon sources used in current production processes. When the carburizing reaction is in progress, the raw silicon material is melted or vaporized and the reaction takes place in the air. No container is required, so impurity contamination is lessened, and the produced silicon carbide has a fairly high purity.

Abstract: A silicon carbide single crystal manufacturing device comprises a furnace, a crucible disposed in the furnace, and a seed crystal holder capable of mounting seed crystals. The seed crystal holder is disposed at an upper portion of the crucible, and the seed crystal holder is capable of rotating and lifting up and down. Inside the furnace is further disposed with a furnace heater capable of heating the furnace to form an ambient first temperature gradient in the furnace. A heater-cooler device capable of acting on silicon carbide single crystals is disposed outside the seed crystal holder. The silicon carbide single crystal manufacturing device is capable of growing silicon carbide single crystals at a high speed while ensuring the high quality of the silicon carbide single crystals, thereby realizing large-diameter growth of the silicon carbide single crystals and reducing the loss in post-machining process.

Abstract: A novel catalyst is provided which enables efficient production of an oxidation product by using an oxygen-induced oxidation reaction of an organic substrate. A novel method of using the catalyst enables efficient manufacturing of the oxidation product by oxidizing the organic substrate using oxygen. A catalyst used in the oxidation reaction of the organic substrate using oxygen contains compound (A), compounds (A) and (B), compounds (A) and (C), compounds (B) and (C), or compounds (A) and (B) and (C). A method for manufacturing the oxidation product using the catalyst involves bringing the organic substrate into contact with oxygen. Compound (A) is an inorganic peroxo acid, a salt of an inorganic peroxo acid, and/or N-halogenated succinimide, compound (B) is a nitroxide and/or a peroxide, and compound (C) is layered silicate.

Abstract: A technology is provided to enable lowering the fault generation rate related to a parts installation device. A parts installation device (100) (calculation device (150)) fetches or calculates state parameter values that represent the relative position relationship or the distance of a part holder and a part during the operation of removing and holding, calculates the fluctuation values of the state parameters, and corrects parameters having a small increase in the cycle time and is effective in reducing fluctuations among the parameter values of the holding position of the part holder, stop time, operating speed, and operation acceleration when the value of the fluctuations exceeds a first threshold.

Abstract: Provided is a method for efficiently producing an oxime, which is a method for producing an oxime by oxidizing, an amine, the method comprising a first contact step and a second contact step, wherein the second contact step is performed by bringing an additional amine into contact with oxygen in the presence of at least a part of an oxidation product obtained in the first contact step.

Abstract: Inside a furnace body with a vacuum environment or under the inert gas protection, the raw silicon material used to produce silicon carbide is melted or vaporized in a high temperature environment over 1300° C., and then the melted or vaporized raw silicon material will react with the carbonaceous gas or liquid to form silicon carbide. The present invention uses the carbonaceous gas with no metallic impurities, to replace petroleum coke, resin, asphalt, graphite, carbon fiber, coal, charcoal and some other carbon sources used in current production processes. When the carburizing reaction is in progress, the raw silicon material is melted or vaporized and the reaction takes place in the air. No container is required, so impurity contamination is lessened, and the produced silicon carbide has a fairly high purity.

Abstract: The present invention provides a wide band gap semiconductor device and its fabrication process, and pertains to the technical field of semiconductor fabrication technology. It resolves the current issue that the wide band gap semiconductor devices are easy to be affected by thermal expansion. The present wide band gap semiconductor device comprises a chip with a substrate made of a wide band gap semiconductor material, and a base mount made of a wide band gap semiconductor material. In addition, there is a recessed slot structure designed on the base mount to hold the chip. The present invention also provides a fabrication process for wide band gap semiconductor devices. In the wide band gap semiconductor device described in the present invention, both of the base mount and the substrate of the chip are made of wide band gap semiconductor materials, which can achieve the purpose of rapid heat transfer.

Abstract: Provided is a method for producing an oxime compound with satisfactory selectivity. Provide is a method for producing an oxime represented by the following formula (II): wherein R1 and R2 are respectively the same as defined below, the method including oxidizing an amine represented by the following formula (I): wherein R1 and R2 each independently represents a hydrogen atom, an optionally substituted hydrocarbon group, or an optionally substituted heterocyclic group (provided that R1 and R2 are not simultaneously hydrogen atoms), or R1 and R2, together with the carbon atom to which R1 and R2 are attached, form an optionally substituted alicyclic hydrocarbon group having 3 to 12 carbon atoms [hereinafter sometimes referred to as the amine compound (I)], with oxygen in the presence of a layered silicate.

Abstract: A novel catalyst is provided which enables efficient production of an oxidation product by using an oxygen-induced oxidation reaction of an organic substrate. A novel method of using the catalyst enables efficient manufacturing of the oxidation product by oxidizing the organic substrate using oxygen. A catalyst used in the oxidation reaction of the organic substrate using oxygen contains compound (A), compounds (A) and (B), compounds (A) and (C), compounds (B) and (C), or compounds (A) and (B) and (C). A method for manufacturing the oxidation product using the catalyst involves bringing the organic substrate into contact with oxygen. Compound (A) is an inorganic peroxo acid, a salt of an inorganic peroxo acid, and/or N-halogenated succinimide, compound (B) is a nitroxide and/or a peroxide, and compound (C) is layered silicate.

Abstract: Provided is a method for efficiently producing an oxime, which is a method for producing an oxime by oxidizing, an amine, the method comprising a first contact step and a second contact step, wherein the second contact step is performed by bringing an additional amine into contact with oxygen in the presence of at least a part of an oxidation product obtained in the first contact step.

Abstract: Provided is a method for producing an oxime compound with satisfactory selectivity. Provide is a method for producing an oxime represented by the following formula (II): wherein R1 and R2 are respectively the same as defined below, the method including oxidizing an amine represented by the following formula (I): wherein R1 and R2 each independently represents a hydrogen atom, an optionally substituted hydrocarbon group, or an optionally substituted heterocyclic group (provided that R1 and R2 are not simultaneously hydrogen atoms), or R1 and R2, together with the carbon atom to which R1 and R2 are attached, form an optionally substituted alicyclic hydrocarbon group having 3 to 12 carbon atoms [hereinafter sometimes referred to as the amine compound (I)], with oxygen in the presence of a layered silicate.

Abstract: A technology is provided to enable lowering the fault generation rate related to a parts installation device. A parts installation device (100) (calculation device (150)) fetches or calculates state parameter values that represent the relative position relationship or the distance of a part holder and a part during the operation of removing and holding, calculates the fluctuation values of the state parameters, and corrects parameters having a small increase in the cycle time and is effective in reducing fluctuations among the parameter values of the holding position of the part holder, stop time, operating speed, and operation acceleration when the value of the fluctuations exceeds a first threshold.

Abstract: A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius. At least a first portion of impurities is caused to be removed from the metallurgical silicon in the molten state. The molten metallurgical silicon is cooled from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region. The liquid state region is solidified to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%.

Abstract: A method includes transferring a raw silicon material in a crucible and subjecting the raw silicon material in the crucible to thermal energy to form a melted silicon material at a temperature of less than 1400 Degrees Celsius, the melted silicon material having an exposed region bounded by an interior region of the crucible, subjecting an exposed inner region of the melted silicon material to an energy source to include an arc heater configured above the exposed region and to be spaced by a gap between the exposed region and a muzzle region of the arc heater to form a determined temperature profile within a vicinity of an inner region of the exposed melted silicon material while maintaining outer regions of the melted silicon material at a temperature below a melting point of the crucible, and removing impurities from the melted silicon material to form higher purity silicon.

Abstract: A method improves yield of an upgraded metallurgical-grade (UMG) silicon purification process. In the UMG silicon purification process, in a reaction chamber, purification is performed on a silicon melt therein by one, all or a plurality of the following techniques in the same apparatus at the same time. The techniques includes a crucible ratio approach, the addition of water-soluble substances, the control of power, the control of vacuum pressure, the upward venting of exhaust, isolation by high-pressure gas jet, and carbon removal by sandblasting, thereby reducing oxygen, carbon and other impurities in the silicon melt, meeting a high-purity silicon standard of solar cells, increasing yield while maintaining low cost, and avoiding EMF reduction over time. An exhaust venting device for the purification process allows exhaust to be vented from the top of the reactor chamber, thereby avoiding backflow of exhaust into the silicon melt and erosion of the reactor.

Abstract: A system for forming high quality silicon material, e.g., polysilicon. In a specific embodiment, the melted material comprises a silicon material and an impurity, e.g., phosphorous species. The system includes a crucible having an interior region. In a specific embodiment, the crucible is made of a suitable material such as a quartz material or others. The quartz material is capable of withstanding a temperature of at least 1400 Degrees Celsius for processing silicon. In a specific embodiment, the crucible is configured in an upright position and has an open region to expose a melted material. In a specific embodiment, the present system has an energy source. Such energy source may be an arc heater or other suitable heating device, including multiple heating devices, which may be the same or different.

Abstract: An optical connector structure (C) includes: an optical fiber (100) having a laser beam entrance end to which a quartz chip (120) is integrally connected; a ferrule (200) into which a portion of the optical fiber (100) including the quartz chip (120) is inserted and which holds the portion of the optical fiber; and a receptacle (21) surrounding the ferrule (200), and including a large-diameter hole (21b) formed toward an opening and a small-diameter hole formed toward a back of the receptacle so as to be connected to the large-diameter hole. A front end portion (210) of the ferrule (200) is inserted into the small-diameter hole (21a) of the receptacle (21), and a back body portion (211) of the ferrule (200) is inserted into the large-diameter hole (21b) of the receptacle (21).

Abstract: A method improves yield of an upgraded metallurgical-grade (UMG) silicon purification process. In the UMG silicon purification process, in a reaction chamber, purification is performed on a silicon melt therein by one, all or a plurality of the following techniques in the same apparatus at the same time. The techniques includes a crucible ratio approach, the addition of water-soluble substances, the control of power, the control of vacuum pressure, the upward venting of exhaust, isolation by high-pressure gas jet, and carbon removal by sandblasting, thereby reducing oxygen, carbon and other impurities in the silicon melt, meeting a high-purity silicon standard of solar cells, increasing yield while maintaining low cost, and avoiding EMF reduction over time. An exhaust venting device for the purification process allows exhaust to be vented from the top of the reactor chamber, thereby avoiding backflow of exhaust into the silicon melt and erosion of the reactor.

Abstract: A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius. At least a first portion of impurities is caused to be removed from the metallurgical silicon in the molten state. The molten metallurgical silicon is cooled from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region. The liquid state region is solidified to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%.