Abstract: A toaster according to the disclosure includes a light receiving unit configured to receive reflected light from bread being cooked and a surface condition determination unit configured to determine a surface condition of the bread being cooked on the basis of intensity of the reflected light received by the light receiving unit.

Abstract: A toaster according to the disclosure includes a light receiving unit configured to receive reflected light from bread being cooked and a surface condition determination unit configured to determine a surface condition of the bread being cooked on the basis of intensity of the reflected light received by the light receiving unit.

Abstract: In the semiconductor light emitting device of the present invention, a reflective layer for reflecting light emitted by a semiconductor light emitting element is formed on a Cu wiring pattern, and a bonding section is formed on a light-emitting-element-mounting area on the Cu wiring pattern, to which an electrode of an LED chip is connected, the bonding section being made of a material allowing the semiconductor light emitting element to be soldered on the reflective layer without flux. Consequently, it is possible to realize a high-quality semiconductor light emitting device which has a semiconductor light emitting element firmly attached to a bonding surface and which is capable of emitting light while reducing deterioration in luminosity and color tone shift.

Abstract: In the line light source device and the plane light emission device, first recesses 14 are formed between adjoining light emission elements 5, on surfaces of sealing resin layers 10 opposite to the board 4. The line light source device and the plane light emission device, in which the light emission elements are coated with resin, have a simple configuration and high uniformity in luminous intensity in an emission end face of the device.

Abstract: In the line light source device and the plane light emission device, first recesses 14 are formed between adjoining light emission elements 5, on surfaces of sealing resin layers 10 opposite to the board 4. The line light source device and the plane light emission device, in which the light emission elements are coated with resin, have a simple configuration and high uniformity in luminous intensity in an emission end face of the device.

Abstract: To read information from a target information recording surface reliably by canceling DC offsets in tracking-signal detection signals is provided. In effecting tracking servo by 3-beam method, auxiliary light receiving domains D3—1, D3—2, D8—1, D8—2 are provided. The auxiliary light receiving domain receives images formed by the light returned from a different information recording surface from the one targeted for reading. Sub beams of ± first-order diffracted light enter the light receiving domains D3, D8, D1, D10. With respect to the diffraction direction of the hologram, the auxiliary light receiving domains D3—1, D3—2 (D8—1, D8—2) are provided on both sides of the light receiving domain D3 (D8). Since signals are computed as: D8?(D8—1+D8—2); and D3?(D3—1+D3—2) with the internal connection, DC offsets can be canceled in RES signals (D1+D3, D8+D10) used in the DPP method.

Abstract: In the semiconductor light emitting device of the present invention, a reflective layer for reflecting light emitted by a semiconductor light emitting element is formed on a Cu wiring pattern, and a bonding section is formed on a light-emitting-element-mounting area on the Cu wiring pattern, to which an electrode of an LED chip is connected, the bonding section being made of a material allowing the semiconductor light emitting element to be soldered on the reflective layer without flux. Consequently, it is possible to realize a high-quality semiconductor light emitting device which has a semiconductor light emitting element firmly attached to a bonding surface and which is capable of emitting light while reducing deterioration in luminosity and color tone shift.

Abstract: Provided is a semiconductor laser device with a ridge waveguide that is excellent in polarization characteristics and easiness of mounting. In its outermost part on which the solder layer is deposited, the incomplete adherent layer is formed at least in the ridge structure. In bonding the semiconductor laser device to the mount via the solder layer, the incomplete adherent layer is not adhered or adhered incompletely to the solder layer. On either side of the incomplete adherent layer is formed the complete adherent layer.

Abstract: A compound semiconductor device including: an isolated mesa section on which an upper surface having two pairs of parallel sides is formed by mesa etching a compound semiconductor wafer, wherein the mesa section is formed from at least a forward mesa surface which is a mesa section side surface having an obtuse angle against a wafer surface and a backward mesa surface which is a mesa section side surface having an acute angle against the wafer surface, the two mesa surfaces being recognized when viewed from an X direction parallel to one pair of the two parallel sides of the upper surface of the mesa section.

Abstract: In this semiconductor laser device, a polarization hologram transmits an outgoing beam directed from a semiconductor laser chip to an optical disk as a forward beam without diffracting the beam, and diffracts a backward beam of the laser beam, which is a return beam of the forward beam that has been reflected by the optical disk, so that the backward beam is deflected from a direction directed toward the semiconductor laser chip part and further directed toward first, second photoreception parts. Therefore, optical loss on the forward way from the semiconductor laser chip to the optical disk can be reduced, and return light to the semiconductor laser chip can be suppressed, so that a high-power, high-sensitivity semiconductor laser device can be realized.

Abstract: A semiconductor laser device includes a submount and a laser chip mounted on the submount. The submount has a front-end face inclined with respect to a light-emitting face of the laser chip and a rear-end face having a shape complementary to the shape of the front-end face.

Abstract: To read information from a target information recording surface reliably by canceling DC offsets in tracking-signal detection signals is provided. In effecting tracking servo by 3-beam method, auxiliary light receiving domains D3—1, D3—2, D8—1, D8—2 are provided. The auxiliary light receiving domain receives images formed by the light returned from a different information recording surface from the one targeted for reading. Sub beams of ± first-order diffracted light enter the light receiving domains D3, D8, D1, D10. With respect to the diffraction direction of the hologram, the auxiliary light receiving domains D3—1, D3—2 (D8?1, D8—2) are provided on both sides of the light receiving domain D3 (D8). Since signals are computed as: D8-(D8—1+D8—2); and D3-(D3—1+D3—2) with the internal connection, DC offsets can be canceled in RES signals (D1+D3, D8+D10) used in the DPP method.

Abstract: In this semiconductor laser device, a polarization hologram transmits an outgoing beam directed from a semiconductor laser chip to an optical disk as a forward beam without diffracting the beam, and diffracts a backward beam of the laser beam, which is a return beam of the forward beam that has been reflected by the optical disk, so that the backward beam is deflected from a direction directed toward the semiconductor laser chip part and further directed toward first, second photoreception parts. Therefore, optical loss on the forward way from the semiconductor laser chip to the optical disk can be reduced, and return light to the semiconductor laser chip can be suppressed, so that a high-power, high-sensitivity semiconductor laser device can be realized.

Abstract: An ingot is placed below parallel wires of a multiwire saw, and the wires are driven to run. The ingot is moved upward and cut by the wires to obtain wafers. The wires are displaced toward one side of cut surfaces of the wafers. By lowering the wafers as the wires remains displaced toward the one side of cut surfaces of the wafers, the wires are pulled out of the wafers without contacting the other side cut surfaces of the wafers. Thus, the multiwire saw does not cause any damage to major surfaces of the wafers and is used many times without cutting the wires.

Abstract: A compound semiconductor device including: an isolated mesa section on which an upper surface having two pairs of parallel sides is formed by mesa etching a compound semiconductor wafer, wherein the mesa section is formed from at least a forward mesa surface which is a mesa section side surface having an obtuse angle against a wafer surface and a backward mesa surface which is a mesa section side surface having an acute angle against the wafer surface, the two mesa surfaces being recognized when viewed from an X direction parallel to one pair of the two parallel sides of the upper surface of the mesa section.

Abstract: A light emitting diode array includes a plurality of light emitting elements, provided on a substrate having a first conductivity type, for causing light to pass through a first area thereof. Each of the plurality of light emitting elements includes an active layer; a first cladding layer having the first conductivity type and a second cladding layer having a second conductivity type provided so as to interpose the active layer therebetween; and a current diffusion layer having the second conductivity type. The current diffusion layers respectively included in the plurality of light emitting elements are isolated from one another, and an area including the current diffusion layer is included in the first area.

Abstract: A wire feeding device for use in a multi-wire saw wherein a single wire, one end of which is connected to a feed reel, the other is connected to a collecting reel, is spirally wound between at least two work rollers arranged in parallel, a fixed distance apart, so that turns of the spirally wound wire are separated at predetermined intervals, is constructed so that the feeding speed v of the wire in the process of cutting a workpiece is controlled in association with the variation of the contact length l.sub.X of the wire with the workpiece in the process of cutting the workpiece. Thus, it is possible to maintain the abraded amount of the wire at constant at all cutting sites in the workpiece to be cut, and furthermore, the waste removed at cutting can become the same throughout the entire part of each cutting plane, so that the thickness can be uniform within the surface of the sliced piece.