Patents by Inventor Masahiro Imade
Masahiro Imade has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10679014Abstract: A translation information providing apparatus includes a forward translator that generates a first translation by translating a first original sentence in a first language into a second language, a back translator that generates a first back translation by back-translating the first translation into the first language, and a translation result outputter that outputs at least either the first original sentence or the first translation and, as the first back translation, a back translation that semantically matches or is semantically similar to the first original sentence.Type: GrantFiled: May 24, 2018Date of Patent: June 9, 2020Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Masaki Yamauchi, Nanami Fujiwara, Masahiro Imade
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Patent number: 10650195Abstract: A bilingual-corpus generating method includes: acquiring a first clause in the first language, a first translated clause obtained by translating the first clause into a second language, a second clause in the first language, a second translated clause obtained by translating the second clause into the second language; and generating, as a translated clause of a third clause obtained by constructing the first clause and the second clause as one sentence by using a first conjunction in the first language, a third translated clause obtained by constructing the first translated clause and the second translated clause as one sentence by using a second conjunction in the second language.Type: GrantFiled: April 18, 2018Date of Patent: May 12, 2020Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Nanami Fujiwara, Masaki Yamauchi, Masahiro Imade
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Patent number: 10402497Abstract: A processing method includes acquiring first parallel text data which is a pair of a first text described in a first language and a first translation of the first text into a second language; evaluating whether the first parallel text data has a possibility of mistranslation on the basis of words included in the first text and the first translation; and outputting information based on the evaluation result. It is evaluated whether the first parallel text data has a possibility of mistranslation on the basis of results of (1) a first determination as to whether the first text includes either or both of a word with a first meaning and an antonym of the word and (2) a second determination as to whether the first translation includes either or both of a translation word with the first meaning and an antonym of the translation word.Type: GrantFiled: April 25, 2018Date of Patent: September 3, 2019Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Masahiro Imade, Masaki Yamauchi, Nanami Fujiwara
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Patent number: 10354646Abstract: A third sentence obtained by replacing a first phrase of a first sentence with a second phrase is input, and it is judged whether a third phrase is included in a first database including at least a phrase used in written text. If the third phrase is not included, a first evaluation value in the first database is calculated for a seventh phrase obtained by replacing the second phrase of the third phrase with a sixth phrase. It is judged whether the third phrase is included in a second database including at least a phrase used in spoken text and whether a second evaluation value calculated from the first evaluation value satisfies a predetermined condition. If the third phrase is included, and the second evaluation value satisfies the predetermined condition, the third sentence and the second sentence as a pair are added to a bilingual corpus.Type: GrantFiled: August 29, 2017Date of Patent: July 16, 2019Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Nanami Fujiwara, Masaki Yamauchi, Masahiro Imade
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Patent number: 10346545Abstract: A method for providing a translation, including: acquiring a first sentence in a first language via a user terminal; determining whether the first sentence is in a database including sentences in the first language and corresponding translations in a second language; if the first sentence is not in the database, generating second sentences by replacing one or more words in the first sentence, based on a predetermined rule; calculating respective degrees of coincidence for syntax between the second sentences and sentences in the first language included in the database; extracting third sentences in the first language which are included in the database and for which the calculated degree of coincidence is at least a threshold value; and displaying fourth sentences in the second language which are corresponding translations for the third sentences in the database, on the user terminal as corresponding translation references for the first sentence.Type: GrantFiled: September 7, 2017Date of Patent: July 9, 2019Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Masahiro Imade, Masaki Yamauchi, Nanami Fujiwara
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Patent number: 10303761Abstract: In a method of creating similar sentences from an entered original, one or more second phrases having the same meaning as a first phrase, which is part of the original, are extracted from a first database; an N-gram value is calculated according to a context dependence value, in a second database, corresponding to the one or more second phrases; one or more contiguous third phrases that include a number of second phrases equivalent to the N-gram value are extracted from one or more sentences obtained by replacing, in the original, the first phrase with the one or more second phrases; the appearance frequency of the one or more third phrases in a third database is calculated; and if the calculated appearance frequency is determined to be larger than or equal to a threshold, the one or more sentences are used as similar sentences of the original and are externally output.Type: GrantFiled: September 7, 2017Date of Patent: May 28, 2019Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Masaki Yamauchi, Nanami Fujiwara, Masahiro Imade
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Publication number: 20180365234Abstract: A processing method includes acquiring first parallel text data which is a pair of a first text described in a first language and a first translation of the first text into a second language; evaluating whether the first parallel text data has a possibility of mistranslation on the basis of words included in the first text and the first translation; and outputting information based on the evaluation result. It is evaluated whether the first parallel text data has a possibility of mistranslation on the basis of results of (1) a first determination as to whether the first text includes either or both of a word with a first meaning and an antonym of the word and (2) a second determination as to whether the first translation includes either or both of a translation word with the first meaning and an antonym of the translation word.Type: ApplicationFiled: April 25, 2018Publication date: December 20, 2018Inventors: MASAHIRO IMADE, MASAKI YAMAUCHI, NANAMI FUJIWARA
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Publication number: 20180357224Abstract: A translation information providing apparatus includes a forward translator that generates a first translation by translating a first original sentence in a first language into a second language, a back translator that generates a first back translation by back-translating the first translation into the first language, and a translation result outputter that outputs at least either the first original sentence or the first translation and, as the first back translation, a back translation that semantically matches or is semantically similar to the first original sentence.Type: ApplicationFiled: May 24, 2018Publication date: December 13, 2018Inventors: MASAKI YAMAUCHI, NANAMI FUJIWARA, MASAHIRO IMADE
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Publication number: 20180341646Abstract: A bilingual-corpus generating method includes: acquiring a first clause in the first language, a first translated clause obtained by translating the first clause into a second language, a second clause in the first language, a second translated clause obtained by translating the second clause into the second language; and generating, as a translated clause of a third clause obtained by constructing the first clause and the second clause as one sentence by using a first conjunction in the first language, a third translated clause obtained by constructing the first translated clause and the second translated clause as one sentence by using a second conjunction in the second language.Type: ApplicationFiled: April 18, 2018Publication date: November 29, 2018Inventors: NANAMI FUJIWARA, MASAKI YAMAUCHI, MASAHIRO IMADE
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Publication number: 20180089169Abstract: In a method of creating similar sentences from an entered original, one or more second phrases having the same meaning as a first phrase, which is part of the original, are extracted from a first database; an N-gram value is calculated according to a context dependence value, in a second database, corresponding to the one or more second phrases; one or more contiguous third phrases that include a number of second phrases equivalent to the N-gram value are extracted from one or more sentences obtained by replacing, in the original, the first phrase with the one or more second phrases; the appearance frequency of the one or more third phrases in a third database is calculated; and if the calculated appearance frequency is determined to be larger than or equal to a threshold, the one or more sentences are used as similar sentences of the original and are externally output.Type: ApplicationFiled: September 7, 2017Publication date: March 29, 2018Inventors: MASAKI YAMAUCHI, NANAMI FUJIWARA, MASAHIRO IMADE
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Publication number: 20180089180Abstract: A method for providing a translation, including: acquiring a first sentence in a first language via a user terminal; determining whether the first sentence is in a database including sentences in the first language and corresponding translations in a second language; if the first sentence is not in the database, generating second sentences by replacing one or more words in the first sentence, based on a predetermined rule; calculating respective degrees of coincidence for syntax between the second sentences and sentences in the first language included in the database; extracting third sentences in the first language which are included in the database and for which the calculated degree of coincidence is at least a threshold value; and displaying fourth sentences in the second language which are corresponding translations for the third sentences in the database, on the user terminal as corresponding translation references for the first sentence.Type: ApplicationFiled: September 7, 2017Publication date: March 29, 2018Inventors: MASAHIRO IMADE, MASAKI YAMAUCHI, NANAMI FUJIWARA
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Publication number: 20180082681Abstract: A third sentence obtained by replacing a first phrase of a first sentence with a second phrase is input, and it is judged whether a third phrase is included in a first database including at least a phrase used in written text. If the third phrase is not included, a first evaluation value in the first database is calculated for a seventh phrase obtained by replacing the second phrase of the third phrase with a sixth phrase. It is judged whether the third phrase is included in a second database including at least a phrase used in spoken text and whether a second evaluation value calculated from the first evaluation value satisfies a predetermined condition. If the third phrase is included, and the second evaluation value satisfies the predetermined condition, the third sentence and the second sentence as a pair are added to a bilingual corpus.Type: ApplicationFiled: August 29, 2017Publication date: March 22, 2018Inventors: NANAMI FUJIWARA, MASAKI YAMAUCHI, MASAHIRO IMADE
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Publication number: 20070278613Abstract: A semiconductor device includes: a semiconductor substrate; a device active portion formed in the semiconductor substrate; a device isolation portion formed in the semiconductor substrate so as to surround the periphery of the device active portion; an insulating film stacked on the device active portion; and a gate electrode stacked on the insulating film. The device active portion includes: a source region and a drain region located opposite each other in a gate length direction, and a channel region interposed between the source region and the drain region. The channel region includes: a central region connecting the source and drain regions and having an approximately rectangular shape, and a protruding region protruding from one side end of the central region in a gate width direction. The channel region is located inwardly of the gate electrode when viewed in the stacking direction.Type: ApplicationFiled: May 31, 2007Publication date: December 6, 2007Inventor: Masahiro Imade
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Patent number: 7034407Abstract: A substrate 11 consists of a semiconductor layer 12 as an element formation region and an STI 13 as an isolation region. A gate dielectric 15 is provided on the semiconductor layer 12, and a gate electrode 14 is provided to extend from the top of the gate dielectric 15 to the top of the STI 13. A sidewall 30 for covering the sides of the gate electrode 14 is provided to extend across the top of the semiconductor layer 12 to the tops of regions of the STI 13 adjacent to the outer edges of the semiconductor layer 12. The sidewall 30 is employed as an ion implantation mask for forming high-concentration impurity diffusion layers 16 each serving as a source/drain region.Type: GrantFiled: June 24, 2003Date of Patent: April 25, 2006Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Masahiro Imade, Tadashi Kadowaki, Hiroyuki Umimoto
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Publication number: 20050087818Abstract: A substrate 11 consists of a semiconductor layer 12 as an element formation region and an STI 13 as an isolation region. A gate dielectric 15 is provided on the semiconductor layer 12, and a gate electrode 14 is provided to extend from the top of the gate dielectric 15 to the top of the STI 13. A sidewall 30 for covering the sides of the gate electrode 14 is provided to extend across the top of the semiconductor layer 12 to the tops of regions of the STI 13 adjacent to the outer edges of the semiconductor layer 12. The sidewall 30 is employed as an ion implantation mask for forming high-concentration impurity diffusion layers 16 each serving as a source/drain region.Type: ApplicationFiled: June 24, 2003Publication date: April 28, 2005Inventors: Masahiro Imade, Tadashi Kadowaki, Hiroyuki Umimoto
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Patent number: 6768201Abstract: In a semiconductor device according to the present invention, an n-type MISFET 12 including a semiconductor substrate 11, a source region 16, a drain region 17 and a gate electrode 19 is provided. On the semiconductor substrate 11, a first interlevel insulating film 13 covering the MISFET 12, a second interlevel insulating film 14 and third interlevel insulating film 15 are provided. On the first interlevel insulating film 13, a first gate interconnect 25 for electrically connecting a gate electrode 19 and the outside, a first drain interconnect for electrically connecting the drain region and the outside are provided so as to face each other with part of a second interlevel insulating film 14 interposed therebetween.Type: GrantFiled: July 15, 2003Date of Patent: July 27, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Masahiro Imade, Hiroyuki Umimoto, Satoe Miyata
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Patent number: 6764921Abstract: A semiconductor device of the present invention includes a MISFET provided in an element formation region Re of a semiconductor substrate 11 and a trench isolation 13 surrounding the sides of the element formation region Re. An oxygen-passage-suppression film 23 is provided from the top of the trench isolation 13 to the top of a portion of the element formation region Re adjacent to the trench isolation 13. The oxygen-passage-suppression film 23 is made of a silicon nitride film or the like through which oxygen is less likely to permeate. Therefore, since it becomes hard that the upper edge of the element formation region Re of the semiconductor substrate 11 is oxidized, an expansion of the volume of the upper edge is suppressed, thereby reducing a stress.Type: GrantFiled: July 31, 2003Date of Patent: July 20, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Masahiro Imade, Hiroyuki Umimoto
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Publication number: 20040063299Abstract: A semiconductor device of the present invention includes a MISFET provided in an element formation region Re of a semiconductor substrate 11 and a trench isolation 13 surrounding the sides of the element formation region Re. An oxygen-passage-suppression film 23 is provided from the top of the trench isolation 13 to the top of a portion of the element formation region Re adjacent to the trench isolation 13. The oxygen-passage-suppression film 23 is made of a silicon nitride film or the like through which oxygen is less likely to permeate. Therefore, since it becomes hard that the upper edge of the element formation region Re of the semiconductor substrate 11 is oxidized, an expansion of the volume of the upper edge is suppressed, thereby reducing a stress.Type: ApplicationFiled: July 31, 2003Publication date: April 1, 2004Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Masahiro Imade, Hiroyuki Umimoto