Patents by Inventor Masahiro Isida

Masahiro Isida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate containing compound semiconductor, method for manufacturing the same and semiconductor device using the same
    Patent number: 6344375
    Abstract: A substrate containing a compound semiconductor layer comprises a substrate layer 11, a first semiconductor layer 12 formed on the substrate layer 11, and a second semiconductor layer 13 made of a Group III nitride-based compound semiconductor formed on the first semiconductor layer 12. The semiconductor layer 12 is provided with a plurality of pores 14. Thus, a compound semiconductor layer containing a Group III nitride-based compound semiconductor with excellent surface planarity and crystallinity can be provided, as well as a method for manufacturing the same, and a semiconductor device using the same.
    Type: Grant
    Filed: July 20, 1999
    Date of Patent: February 5, 2002
    Assignee: Matsushita Electric Industrial Co., Ltd
    Inventors: Kenji Orita, Masahiro Isida, Shinji Nakamura, Masaaki Yuri, Nobuyuki Uemura