Abstract: A gas adsorptive member is disposed in a space communicating with film deposition chambers, and deposition films are deposited while continuously feeding gas components released from this member, thereby enabling the high quality and uniform deposition films to be formed on the substrate with good reproducibility.

Abstract: A method is provided for programming data for a memory element of a twin memory cell (i). The word line WL1 is set to a programming word line selection voltage, the control gate CG[i+1] is set to a programming control gate voltage, and the control gate CG[i] is set to an over-ride voltage. The bit line BL[i+1] is set to a programming bit line voltage, and the bit line BL[i+2] is set to Vdd, but not to 0 V.

Abstract: A method is provided for programming data for a memory element of a twin memory cell (i). The word line WL1 is set to a programming word line selection voltage, the control gate CG[i+1] is set to a programming control gate voltage, the control gate CG[i] is set to an over-ride voltage, the bit line BL[i+1] is set to a programming bit line voltage, and the bit line BL[i] is connected to the constant current source.

Abstract: A process for producing a semiconductor device such as a photovoltaic element including a solar cell or a photosensor having a photoelectric conversion semiconductor layer formed by sequentially forming a p-type or n-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, an i-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, and an n-type or p-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material on a substrate by means of plasma CVD, characterized in that at least one i-type semiconductor as said i-type semiconductor layer is formed in a discharge chamber having a cathode electrode by means of VHF plasma CVD using a silicon-containing raw material gas, wherein a VHF power of a wattage which is two times or less that of a VHF power required for decomposing 100% of said silicon-containing raw material gas is applied to said cathode electrode.

Abstract: A film forming apparatus for forming a film on a substrate is provided, the apparatus including gas introduction unit including a nozzle for jetting a gas for forming the film toward a surface of the substrate and an inlet for introducing the gas, the gas introduction unit having a plurality of nozzles connected to the one inlet by divergent paths.

Abstract: In the step of forming a microcrystalline i-type semiconductor layer by high-frequency plasma CVD, wherein an area of the parallel-plate electrode is represented by S; a width of the discharge space in its direction perpendicular to the transport direction of the belt-like substrate, by Ws; a width of a region formed by the parallel-plate electrode together with its surrounding insulating region, in its direction perpendicular to the transport direction of the belt-like substrate, by Wc; a width of the belt-like substrate in the direction perpendicular to its transport, by Wk; a distance between the parallel-plate electrode and the belt-like substrate, by h; a power density at which crystal fraction begins to saturate at predetermined substrate temperature, material gas flow rate and pressure, by Pd; and a high-frequency power, by P, 2h/(Ws−Wc)≧2.5, (Ws/h)×2(Ws−Wk)/[4h+(Ws−Wc) ]≧10, and P≧(10/8)×Pd×S.

Abstract: A process for producing a semiconductor layer by introducing a raw gas into a discharge chamber and supplying high-frequency power to the chamber to decompose the raw gas by discharge, thereby forming a semiconductor layer on a substrate within the discharge chamber, the process comprising the steps of supplying high-frequency power of at least very high frequency (VHF) as the high-frequency power; supplying bias power of direct current power and/or high-frequency power of radio-frequency (RF) together with the high-frequency power of VHF to the discharge chamber; and controlling a direct current component of an electric current flowing into an electrode, to which the bias power is supplied, so as to fall within a range of from 0.1 A/m2 to 10 A/m2 in terms of a current density based on the area of an inner wall of the discharge chamber. A good-quality semiconductor layer can be deposited over a large area at a high speed.

Abstract: A film-forming apparatus comprising a vacuum chamber, a power application electrode, a raw material gas introduction portion through which a raw material gas is introduced into the vacuum chamber, and an exhaustion portion through which the vacuum chamber is exhausted, the power application electrode being arranged so as to oppose a substrate for film formation positioned in the vacuum chamber, characterized in that at least said raw material gas introduction portion or the exhaustion portion is provided with an opening adjusting member having a desired thickness for intercepting the plasma, and the power application electrode and the opening adjusting member are arranged to satisfy an equation a or c≧b, with a being a shortest distance between the power application electrode and the opening adjusting member provided at the raw material gas introduction portion, c being a shortest distance between the power application electrode and the opening adjusting member provided at the exhaustion portion, and b bei

Abstract: An ink cartridge for an ink jet printer having a housing having at least one wall. The ink cartridge further has at least two ink chambers for containing different ink accommodated in the housing. Ink supply ports are formed in one wall of the housing within each of the ink chambers. Each of the ink supply ports has an inner opening and an outer opening. The distance from the inner opening of a first ink supply port to that of a second ink supply port adjacent to the first ink supply port is different from a second distance from the outer opening of the first ink supply opening to that of the second ink supply port.

Abstract: A film-forming apparatus which has at least a vacuum vessel whose inside is capable of being vacuumed and a film-forming chamber having a discharge region provided in said vacuum vessel and in which a substrate web having a desired width and a desired length is arranged so as to constitute a part of said film-forming chamber, wherein said substrate web is continuously moved to pass through said discharge region of said film-forming chamber to continuously form a deposited film on said substrate web, characterized in that said film-forming chamber is provided with an opening-adjusting member such that said opening-adjusting member constitutes an entrance or/and an exit of said film-forming chamber, and a face of said opening-adjusting member which is opposed to said substrate web has one or more grooves formed substantially in parallel to a direction for said substrate web to be transported.

Abstract: A film-forming apparatus for forming a non-single crystalline silicon series semiconductor film on a substrate in a film-forming space provided in a vacuum chamber using a very high frequency power supplied through a high frequency power supply means comprising a bar-like shaped electrode, wherein said bar-like shaped electrode is arranged such that the longitudinal direction thereof intersects a direction for said substrate to be moved, and a length of said film-forming space relative to the direction for said substrate to be moved is in a range of from {fraction (1/16)} to ½ of a wavelength of said very high frequency power supplied in said film-forming space. A film-forming method for forming a non-single crystalline silicon series semiconductor film on a substrate using said film-forming apparatus.

Abstract: An ink cartridge for an ink jet printer having a housing having at least one wall. The ink cartridge further has at least two ink chambers for containing different ink accommodated in the housing. Ink supply ports are formed in one wall of the housing within each of the ink chambers. Each of the ink supply ports has an inner opening and an outer opening. The distance from the inner opening of a first ink supply port to that of a second ink supply port adjacent to the first ink supply port is different from a second distance from the outer opening of the first ink supply opening to that of the second ink supply port.

Abstract: A film-forming method for forming a deposited film on a substrate arranged in a substantially enclosed film-forming vessel by means of plasma CVD by introducing a raw material gas comprising at least a hydrogen gas and a silicon-containing raw material gas into said film-forming vessel and introducing a high frequency power into said film-forming vessel through a discharge electrode provided in said film-forming vessel to generate a plasma in a plasma generation region between said substrate and said discharge electrode in said film-forming vessel whereby forming said deposited film on said substrate, wherein the formation of said deposited film on said substrate is performed while applying a periodicity voltage having at least two different waveform components having a different amplitude to an auxiliary electrode arranged at a position in said plasma generation region of said film-forming vessel or an auxiliary electrode provided on the rear side of said substrate and outside said plasma generation region.

Abstract: A method of forming a photovoltaic element according to the present invention comprises at least the steps of depositing a metal layer on a supporting member, depositing a metal oxide layer on the above metal layer, and arranging at least one or more pin structures, each of which is formed by stacking the predetermined n-type, i-type and p-type semiconductor layers, on a substrate formed by stacking on the above supporting member, the above metal layer and the above metal oxide layer in this order, wherein a step of subjecting the supporting member having the metal layer formed thereon to heat treatment is carried out between the two steps of depositing the above metal layer and depositing the above metal oxide layer.

Abstract: In a deposited film forming system having at least a vacuum vessel, means for feeding a film-forming material gas into the vacuum vessel, a discharge electrode provided inside the vacuum vessel, used to make the material gas into a plasma, and a power supply conductor for applying a high-frequency power to the discharge electrode, the system comprises an earth shield so disposed as to surround the power supply conductor inside the vacuum vessel, and a plurality of dielectric materials at least part of which is disposed between the power supply conductor and the earth shield. A process carried out using the deposited film forming system is also disclosed. The system and process can maintain large-area and uniform discharge for a long time and can form deposited films having a high quality and a superior uniformity, on a beltlike substrate that moves continuously.

Abstract: A flow control device has a body (41), a plurality of elastic flow control tube (51-54) provided in the body (41), a single fluid path (55) in communication with the flow control tube (51-54), a slider (56) slidable relative to the body (41), and a valve mechanism (71) for selectively pressing and shutting the flow control tube (51-54) in accordance with a slide position of the slider (56).

Abstract: An ink cartridge for an ink-jet recording apparatus including an ink supply opening having a packing member capable of closely contacting with the outer circumference of an ink supply needle, the packing member is made of a thermoplastic elastomer containing 25% or less by weight of a polyethylene oil.

Abstract: The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency.

Abstract: In a discharge space, a substrate 201 and a cathode 206 are disposed a distance d (cm) apart from each other, and gas containing one or more silicon compounds and hydrogen are introduced into the discharge space, and a product Pd of a film forming pressure P (Pa) and d, and a hydrogen flow rate M (SLM) are set so as to meet a relation:

Abstract: In the step of forming a microcrystalline i-type semiconductor layer by high-frequency plasma CVD, where an area of the parallel-plate electrode is represented by S; a width of the discharge space in its direction perpendicular to the transport direction of the belt-like substrate, by Ws; a width of a region formed by the parallel-plate electrode together with its surrounding insulating region, in its direction perpendicular to the transport direction of the belt-like substrate, by Wc; a width of the belt-like substrate in the direction perpendicular to its transport, by Wk; a distance between the parallel-plate electrode and the belt-like substrate, by h; a power density at which crystal fraction begins to saturate at predetermined substrate temperature, material gas flow rate and pressure, by Pd; and a high-frequency power, by P; these are set as follows: