Abstract: Provided is a shopping cart capable of simplifying equipment of a storage area of the shopping cart. A shopping cart allowed to be nested in a front-rear direction, including: a cart body; a battery configured to supply power to an electronic device attached to the cart body and displayed commodity information read by a reading device; a power receiving portion provided on a front side of the cart body and configured to be electrically connectable to an external power supply; and a power transmitting portion provided on a rear surface side of the power receiving portion and configured to supply power to a power receiving portion of another shopping cart nested in the shopping cart. Each of the power receiving portion and the power transmitting portion is provided with a magnet configured for holding a relative position.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer comprised of an insulating material, a semicondcutor or an antiferromagnetic material against said magnetic layers, and the magnetoresistance effect element has terminals formed with at least on the opposite magnetic layers, respectively, so that a current is sure to be flowed in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The proposed magnetic storage apparatus has the following features. The frequency at which data is recorded is selected to be 45 MHz. The thickness, resistivity and relative permeability of the magnetic film of which the magnetic poles of the magnetic head used in the apparatus are made are designed considering the eddy current loss. Also, the relation of &mgr;d2/&rgr;≦500 is satisfied where d (&mgr;m) is the thickness of the magnetic film of which the magnetic poles of the magnetic head are made, &rgr; (&mgr;&OHgr;-cm) is the resistivity, and &mgr; is the relative permeability in a low-frequency range. Under these conditions, the amount of attenuation of recording magnetic field is reduced to 10% or below, and problems of writing blur and overwrite value variation which occur as the recording frequency changes can be solved. Moreover, the media data rate is 15 megabytes per sec., and the areal data-recording density is 500 megabits per square inch or more.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer comprised of an insulating material, a semicondcutor or an antiferromagnetic material against said magnetic layers, and the magnetoresistance effect element has terminals formed with at least on the opposite magnetic layers, respectively, so that a current is sure to be flowed in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The proposed magnetic storage apparatus has the following features. The frequency at which data is recorded is selected to be 45 MHz. The thickness, resistivity and relative permeability of the magnetic film of which the magnetic poles of the magnetic head used in the apparatus are made are designed considering the eddy current loss. Also, the relation of &mgr;d2/&rgr;≦500 is satisfied where d (&mgr;m) is the thickness of the magnetic film of which the magnetic poles of the magnetic head are made, &rgr; (&mgr;&OHgr;-cm) is the resistivity, and &mgr; is the relative permeability in a low-frequency range. Under these conditions, the amount of attenuation of recording magnetic field is reduced to 10% or below, and problems of writing blur and overwrite value variation which occur as the recording frequency changes can be solved. Moreover, the media data rate is 15 megabytes per sec., and the areal data-recording density is 500 megabits per square inch or more.

Abstract: The proposed magnetic storage apparatus has the following features. The frequency at which data is recorded is selected to be 45 MHz. The thickness, resistivity and relative permeability of the magnetic film of which the magnetic poles of the magnetic head used in the apparatus are made are designed considering the eddy current loss. Also, the relation of &mgr;d2/&rgr;≦500 is satisfied where d (&mgr;m) is the thickness of the magnetic film of which the magnetic poles of the magnetic head are made, &rgr;(&mgr;&OHgr;-cm) is the resistivity, and &mgr;is the relative permeability in a low-frequency range. Under these conditions, the amount of attenuation of recording magnetic field is reduced to 10% or below, and problems of writing blur and overwrite value variation which occur as the recording frequency changes can be solved. Moreover, the media data rate is 15 megabytes per sec., and the areal data-recording density is 500 megabits per square inch or more.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semicondutor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The proposed magnetic storage apparatus has the following features. The frequency at which data is recorded is selected to be 45 MHz. The thickness, resistivity and relative permeability of the magnetic film of which the magnetic poles of the magnetic head used in the apparatus are made are designed considering the eddy current loss. Also, the relation of .mu.d.sup.2 /.rho..ltoreq.500 is satisfied where d (.mu.m) is the thickness of the magnetic film of which the magnetic poles of the magnetic head are made, .rho. (.mu..OMEGA.-cm) is the resistivity, and .mu. is the relative permeability in a low-frequency range. Under these conditions, the amount of attenuation of recording magnetic field is reduced to 10% or below, and problems of writing blur and overwrite value variation which occur as the recording frequency changes can be solved. Moreover, the media data rate is 15 megabytes per sec., and the areal data-recording density is 500 megabits per square inch or more.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-denisity recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: A magnetoresistive element uses a multilayer film where ferromagnetic layers and nonferromagnetic layers are layered on each other, wherein a permanent magnet layer is formed on the aforementioned multilayer film through one of the nonferromagnetic layers and a bias field is applied on the multilayer film.

Abstract: A magnetoresistance effect reproduction head which comprises a magnetoresistive layer having a central sensing region and an end domain control region and formed into a thin film of a ferromagnetic material, a hard magnetic layer overlapping with the end domain control region in direct contact therewith and formed into a thin film of a hard magnetic material, a magnetic field and a longitudinal magnetic bias field by ferromagnetic exchange coupling is generated for maintaining the central sensing region of the magnetoresistive layer in single domain state.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.