Patents by Inventor Masahiro Koboyashi

Masahiro Koboyashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid-state imaging apparatus and imaging system
    Patent number: 10158817
    Abstract: Provided is a solid-state imaging apparatus, including pixels each including: a photoelectric conversion unit; a charge accumulation unit; a transistor including a control electrode; a waveguide; and a light-shielding portion. The waveguide includes an incident portion and an output portion, the light-shielding portion includes a first portion that covers the control electrode of the transistor and a second portion that covers a part of the photoelectric conversion unit, the output portion and the photoelectric conversion unit are arranged with an interval therebetween, the interval between the output portion and the photoelectric conversion unit is larger than an interval between a lower end of the second portion of the light-shielding portion and the photoelectric conversion unit, and the interval between the output portion and the photoelectric conversion unit is smaller than an interval between an upper end of the second portion of the light-shielding portion and the photoelectric conversion unit.
    Type: Grant
    Filed: January 4, 2018
    Date of Patent: December 18, 2018
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Mineo Shimotsusa, Masatsugu Itahashi, Masahiro Koboyashi, Kazunari Kawabata, Takeshi Ichikawa
  • SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM
    Publication number: 20180131885
    Abstract: Provided is a solid-state imaging apparatus, including pixels each including: a photoelectric conversion unit; a charge accumulation unit; a transistor including a control electrode; a waveguide; and a light-shielding portion. The waveguide includes an incident portion and an output portion, the light-shielding portion includes a first portion that covers the control electrode of the transistor and a second portion that covers a part of the photoelectric conversion unit, the output portion and the photoelectric conversion unit are arranged with an interval therebetween, the interval between the output portion and the photoelectric conversion unit is larger than an interval between a lower end of the second portion of the light-shielding portion and the photoelectric conversion unit, and the interval between the output portion and the photoelectric conversion unit is smaller than an interval between an upper end of the second portion of the light-shielding portion and the photoelectric conversion unit.
    Type: Application
    Filed: January 4, 2018
    Publication date: May 10, 2018
    Inventors: Mineo Shimotsusa, Masatsugu Itahashi, Masahiro Koboyashi, Kazunari Kawabata, Takeshi Ichikawa