Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: To provide an excellent image by reducing buckling of a CCD device having one-dimensional CCD elements mounted thereon due to changes in temperature. Blackening treated iron or iron-based alloy is used as a material of a heat sink 11 having a one-dimensional CCD element 14 mounted thereon. The thermal coefficient of expansion of the heat sink 21 is matched with that of a hollow molded case 12 for integrally molding the heat sink 11 and a lead frame 20. A plurality of projections 21 formed on the side of the hollow molded case 12 are disposed at a bonding interface between the glass cap 13 which closes an upper opening of the hollow molded case 12 and side walls of hollow molded case 12.

Abstract: A nonvolatile semiconductor memory device includes a gate electrode portion composed of a floating gate electrode formed above a main surface of a semiconductor substrate of a first conductivity type via a tunnel insulating film, an inter-electrode insulating film formed on the floating gate electrode and formed of a stacked structure film of three or more layers formed of two or more types of high-dielectric material, and a control gate electrode formed above the floating gate electrode via the inter-electrode insulating film, and source and drain regions of a second conductivity type which are formed on the main surface of the substrate with the gate electrode portion being arranged between the source and drain regions.

Abstract: An ultrasonic inspection instrument for detecting a crack and performing sizing in the depth direction of the crack. By a transmitter element array and a receiver element array included in a common sensor, focus points between focused acoustic fields are electronically scanned in a range including a location where half the sum of the transmitting angle of ultrasonic waves to an inspection-target material and the receiving angle of diffraction echoes from the inspection-target material is 30 degrees, so that a tip portion of the crack is detected from the received diffraction echoes. Thus, the detectability of the ultrasonic inspection instrument for detecting diffraction waves in a subject to be inspected and performing crack inspection is stabilized and kept high.

Abstract: In order to make it possible in ultrasonic flaw detection to generate ultrasonic waves containing a main beam only by use of an array probe and clearly identify a defect in a specimen by use of images, an element pitch P (the distance between centers of adjacent ultrasonic transducer elements in the array probe) is set longer than ¼ of the wavelength of longitudinal waves generated by the ultrasonic transducer elements and shorter than ½ of the wavelength and reception signals up to time corresponding to the sum of wall thickness round-trip propagation time for longitudinal waves and wall thickness round-trip propagation time for shear waves in the specimen are displayed.

Abstract: Disclosed is a semiconductor device comprising a Ge semiconductor area, and an insulating film area, formed in direct contact with the Ge semiconductor area, containing metal, germanium, and oxygen.

Abstract: To provide an excellent image by reducing buckling of a CCD device having one-dimensional CCD elements mounted thereon due to changes in temperature. Blackening treated iron or iron-based alloy is used as a material of a heat sink 11 having a one-dimensional CCD element 14 mounted thereon. The thermal coefficient of expansion of the heat sink 21 is matched with that of a hollow molded case 12 for integrally molding the heat sink 11 and a lead frame 20. A plurality of projections 21 formed on the side of the hollow molded case 12 are disposed at a bonding interface between the glass cap 13 which closes an upper opening of the hollow molded case 12 and side walls of hollow molded case 12.

Abstract: A nondestructive apparatus uses a guided wave. The nondestructive apparatus has a waveform forming apparatus for forming a transmission waveform by employing a reference waveform, a transmitting element for generating the guided wave within an object under inspection based upon the transmission waveform, a receiving element for receiving a reflection wave of the guided wave from an inspection region of the object under inspection, an analyzing apparatus for outputting inspection information which is acquired based upon the reception waveform of the reflection wave received by the receiving element, and the display apparatus for displaying the inspection information.

Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: An ultrasonic inspection instrument for detecting a crack and performing sizing in the depth direction of the crack. By a transmitter element array and a receiver element array included in a common sensor, focus points between focused acoustic fields are electronically scanned in a range including a location where half the sum of the transmitting angle of ultrasonic waves to an inspection-target material and the receiving angle of diffraction echoes from the inspection-target material is 30 degrees, so that a tip portion of the crack is detected from the received diffraction echoes. Thus, the detectability of the ultrasonic inspection instrument for detecting diffraction waves in a subject to be inspected and performing crack inspection is stabilized and kept high.

Abstract: A semiconductor device can perform resin sealing of an under-fill region and peripheral portion on the side of a semiconductor chip in the same process step, with shortening periods required for filling and curing the under-fill resin and avoiding formation of an internal void, and can simplify fabrication process and component parts. The semiconductor device includes a through opening provided at a predetermined position of the wired substrate, an under-fill region as a gap portion between the wired substrate and the semiconductor chip, and a molded resin portion as peripheral portion along side edge of the semiconductor chip.

Abstract: A semiconductor device can perform resin sealing of an under-fill region and peripheral portion on the side of a semiconductor chip in the same process step, with shortening periods required for filling and curing the under-fill resin and avoiding formation of an internal void, and can simplify fabrication process and component parts. The semiconductor device includes a through opening provided at a predetermined position of the wired substrate, an under-fill region as a gap portion between the wired substrate and the semiconductor chip, and a molded resin portion as peripheral portion along side edge of the semiconductor chip.

Abstract: A data administration method in a power-generating plant. Process data and operation history data of the power-generating plant are acquired from a power company; equipment-related data including the inspection data of the plant equipment is acquired from a plant maker; and these data are stored in a memory device in the state related to the plant equipment and/or inspection data every power-generating plant. The inspection data of the corresponding inspection data from among data stored in the memory device is extracted in response to inspection data requirement from the plant maker, and the extracted inspection data is provided to the plant maker. In response to the data requirement necessary for the evaluation of said plant configuration equipment from the plant maker, data necessary for the evaluation from among the data stored in the memory device, and the data necessary for the evaluation extracted is provided to the plant maker.

Abstract: A semiconductor device can perform resin sealing of an under-fill region and peripheral portion on the side of a semiconductor chip in the same process step, with shortening periods required for filling and curing the under-fill resin and avoiding formation of an internal void, and can simplify fabrication process and component parts. The semiconductor device includes a through opening provided at a predetermined position of the wired substrate, an under-fill region as a gap portion between the wired substrate and the semiconductor chip, and a molded resin portion as peripheral portion along side edge of the semiconductor chip.

Abstract: A semiconductor device includes a Si oxide film formed between a Si substrate and a metallic oxide film is prevented from growing when an annealing treatment is performed after the metallic oxide film is formed, and a method for manufacturing the same. A semiconductor device comprises a silicon substrate, a gate insulating film formed on the silicon substrate and made of the metallic oxide film, and a gate electrode formed on the gate insulating film, wherein an interface film formed between the gate insulating film and the Si substrate is thinner at the ends of the gate insulating film than in the center thereof.

Abstract: A semiconductor device includes a lead frame, a semiconductor chip, a resin-encapsulated portion, and tie bars. The semiconductor chip is mounted on a die pad of the lead frame. The resin-encapsulated portion resin-encapsulates the semiconductor chip. The tie bars are provided to outer lead portions of the lead frame to prevent resin leakage during resin encapsulation, and are cut and removed in a finishing step of resin encapsulation. A plating surface is formed on a sectional surface of each of the tie bars. A semiconductor device manufacturing method and apparatus are also disclosed.

Abstract: In a film or panel having excellent near-infrared absorbability and excellent near-infrared shieldability, and having a high degree of visible ray transmittance and good color tone, in order to produce the near-infrared-absorbing film or panel having good color tone while the near-infrared-absorbing dye disposed therein is kept stable, the dye and the binder resin for the dye are specifically selected, and the production method is also specifically selected. In addition, for the purpose of producing the film or panel while the dye disposed therein is kept stable and for the purpose of making the film or panel have additional functions such as electromagnetic radiation absorbability, the film or panel is made to have a multi-layered structure.

Abstract: A stress evaluation method for evaluating stress acting on a test piece includes the steps of transmitting acoustic waves including a surface wave, a longitudinal wave, and a shear wave through the test piece; receiving the acoustic waves after they have propagated through the test piece; obtaining acoustic velocities of the surface wave at a non-loaded portion and a loaded portion of the test piece based on the received acoustic waves; evaluating a stress in a surface layer of the test piece based on a difference between the surface wave acoustic velocities at the non-loaded portion and the loaded portion and a predetermined relationship between surface wave acoustic velocities and stresses; obtaining an acoustic velocity of the longitudinal wave at the non-loaded portion based on the received acoustic waves; calculating an acoustic velocity of the shear wave at the loaded portion based on the received acoustic waves and the longitudinal wave acoustic velocity at the non-loaded portion; evaluating an interna

Abstract: A method of manufacturing a semiconductor device comprises the step of applying a nitridation treatment to a semiconductor substrate in the presence of a network terminal element so as to form a nitride film containing the network terminal element on the semiconductor substrate.

Abstract: Cyclic formal is manufactured by cyclic reaction of an alkylene glycol and an aldehyde in a reactor, producing formal mixed with unreacted aldehyde as an impurity, which impurity is reduced in amount by connecting the reactor to a distillation tower and continuously supplying alkylene glycol to the distillation tower from which unreacted formaldehyde and a cyclic formal are being distilled, and continuously reacting them with supplied raw formaldehyde by countercurrent flow during distillation; water content in azeotropic admixture with cyclic formal can be removed by azeotropic distillation with a hydrocarbon azeotropic mixture with water, distilling water from the cyclic formal.