Patents by Inventor Masahiro Koto
Masahiro Koto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7589001Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: GrantFiled: September 29, 2006Date of Patent: September 15, 2009Assignee: Mitsubishi Chemical CorporationInventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Patent number: 7504324Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: GrantFiled: September 29, 2006Date of Patent: March 17, 2009Assignee: Mitsubishi Chemical CorporationInventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Publication number: 20070026643Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: ApplicationFiled: September 29, 2006Publication date: February 1, 2007Applicant: MITSUBISHI CABLE INDUSTRIES, LTD.Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Publication number: 20070026644Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: ApplicationFiled: September 29, 2006Publication date: February 1, 2007Applicant: MITSUBISHI CABLE INDUSTRIES, LTD.Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Patent number: 7115486Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: GrantFiled: May 11, 2004Date of Patent: October 3, 2006Assignee: Mitsubishi Cable Industries Ltd.Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Publication number: 20060207496Abstract: A first electrode is partially contacted with a domain to be polarization-inverted 2 on one plate face of a nonlinear optical crystal substrate 1, a second electrode is contacted with the other plate face of the substrate, and a polarization inversion voltage is applied between the both electrodes. At this time, the electrode is so formed that the contact area of the first electrode 3 with the plate face satisfies particular conditions, and the domain to be polarization-inverted is entirely or partially polarization-inverted by the application of a polarization inversion voltage. The aforementioned particular conditions are that each contact area 3 is dot-like so that plural contact areas 3 can be present independently within individual domains to be polarization-inverted 2, and individual dot-like contact areas have an area of 0.00785 ?m 2-7850 ?m2 and a shape included in a circle having a diameter of 100 ?m. As a result, a polarization inverted crystal having high quality can be obtained more easily.Type: ApplicationFiled: March 12, 2004Publication date: September 21, 2006Inventors: Masahiro Koto, Hirokazu Taniguchi, Shigeo Maeda
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Patent number: 6940098Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: GrantFiled: March 15, 2000Date of Patent: September 6, 2005Assignee: Mitsubishi Cable Industries, Ltd.Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Publication number: 20040206299Abstract: A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality.Type: ApplicationFiled: May 11, 2004Publication date: October 21, 2004Applicant: MITSUBISHI CABLE INDUSTRIES, LTD.Inventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Yoichiro Ouchi, Masahiro Koto
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Patent number: 6794210Abstract: The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.Type: GrantFiled: November 7, 2003Date of Patent: September 21, 2004Assignee: Mitsubishi Cable Industries, Ltd.Inventors: Yoichiro Ouchi, Hiroaki Okagawa, Masahiro Koto, Kazuyuki Tadatomo
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Publication number: 20040094084Abstract: The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.Type: ApplicationFiled: November 7, 2003Publication date: May 20, 2004Applicant: MITSUBISHI CABLE INDUSTRIES, LTD.Inventors: Yoichiro Ouchi, Hiroaki Okagawa, Masahiro Koto, Kazuyuki Tadatomo
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Patent number: 6734515Abstract: A semiconductor light receiving element having a light receiving layer (1) formed from a GaN group semiconductor, and an electrode (2) formed on one surface of the light receiving layer as a light receiving surface (1a) in such a way that the light (L) can enter the light receiving layer is provided. When the light receiving element is of a Schottky barrier type, the aforementioned electrode (2) contains at least a Schottky electrode, which is formed in such a way that, on the light receiving surface (1a), the total length of the boundary lines between areas covered with the Schottky electrode and exposed areas is longer than the length of the outer periphery of the light receiving surface (1a).Type: GrantFiled: March 16, 2001Date of Patent: May 11, 2004Assignees: Mitsubishi Cable Industries, Ltd., Nikon CorporationInventors: Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi, Masahiro Koto, Kazumasa Hiramatsu, Yutaka Hamamura, Sumito Shimizu
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Patent number: 6700179Abstract: The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.Type: GrantFiled: December 18, 2001Date of Patent: March 2, 2004Assignee: Mitsubishi Cable Industries, Ltd.Inventors: Yoichiro Ouchi, Hiroaki Okagawa, Masahiro Koto, Kazuyuki Tadatomo
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Patent number: 5987041Abstract: A laser apparatus capable of emitting a laser beam upon wavelength conversion and intensity modulation, which comprises a fundamental wave resonance means comprising a light emitting part, an optical resonator comprising mirrors sandwiching the light emitting part and capable of laser resonating, and a modulation-conversion means set inside said optical resonator, said light emitting part being a semiconductor light emitting element or a laser medium, said modulation-conversion means converting, by a nonlinear optical effect, a fundamental laser resonance wavelength light, and phase modulating said light by an electro-optical effect, and a modulation part of said modulation-conversion means comprising electrodes for application of a modulation voltage.Type: GrantFiled: April 22, 1998Date of Patent: November 16, 1999Assignee: Mitsubishi Cable Industries, Ltd.Inventors: Hirokazu Taniguchi, Kazuyuki Miyake, Masahiro Koto