Abstract: A film deposition method for filling a recessed pattern with a SiN film is provided. NH2 groups are caused to adsorb on a surface of a substrate containing a recessed pattern formed in a top surface of the substrate by supplying a first process gas containing NH3 converted to first plasma to the surface of the substrate containing the recessed pattern. The NH2 groups is partially converted to N groups by supplying a second process gas containing N2 converted to second plasma to the surface of the substrate containing the recessed pattern on which the NH2 groups is adsorbed. A silicon-containing gas is caused to adsorb on the NH2 groups by supplying the silicon-containing gas to the surface of the substrate containing the recessed pattern on which the NH2 groups and the N groups are adsorbed. The above steps are cyclically repeated.

Abstract: A protective film forming method is provided. In the method, substantially an entire surface of a silicon-containing underfilm is terminated with fluorine by supplying a fluorine-containing gas to the silicon-containing underfilm formed on a substrate having a surface including a plurality of recesses and a flat surface provided between the adjacent recesses. A surface of the silicon-containing underfilm formed on the flat surface of the substrate is nitrided by supplying a nitriding gas converted to plasma to the silicon-containing underfilm terminated with fluorine such that a silicon adsorption site is formed on the surface of the silicon-containing underfilm formed on the flat surface of the substrate. A silicon-containing gas is adsorbed on the silicon adsorption site by supplying the silicon-containing gas to the silicon-containing underfilm.

Abstract: A method for disassembling/assembling a gas turbine including a seal plate disposed on a first side of a rotor disc in an axial direction of the rotor disc, and a seal plate restraint part for restricting movement of the seal plate relative to the rotor disc in a radial direction of the rotor disc includes a seal-plate-restraint-state switching step of moving the seal plate restraint part along the axial direction to switch between a seal plate non-restraint state where the seal plate restraint part does not restrict movement of the seal plate in the radial direction and a seal plate restraint state where at least a part of the seal plate restraint part protrudes in the axial direction from the seal plate and thereby restricts movement of the seal plate in the radial direction.

Abstract: A method for disassembling/assembling a gas turbine including a seal plate disposed on a first side of a rotor disc in an axial direction of the rotor disc, and a seal plate restraint part for restricting movement of the seal plate in a radial direction of the rotor disc. The method includes a seal-plate-restraint-state switching step of operating the seal plate restraint part from a second side in the axial direction via a clearance between a platform of a blade and a region of an outer peripheral surface of the rotor disc except a blade groove for receiving the blade to switch between a seal plate non-restraint state where the seal plate restraint part does not restrict movement of the seal plate in the radial direction and a seal plate restraint state where at least a part of the seal plate restraint part protrudes in the axial direction.

Abstract: A method for disassembling/assembling a gas turbine including a seal plate disposed on a first side of a rotor disc in an axial direction of the rotor disc, and a seal plate restraint part for restricting movement of the seal plate relative to the rotor disc in a radial direction of the rotor disc includes a seal-plate-restraint-state switching step of operating the seal plate restraint part from a second side in the axial direction to switch between a seal plate non-restraint state where the seal plate restraint part does not restrict movement of the seal plate in the radial direction and a seal plate restraint state where at least a part of the seal plate restraint part protrudes toward the second side in the axial direction from the seal plate and thereby restricts movement of the seal plate in the radial direction.

Abstract: A spoke angle deviation amount measuring system (2) includes a first to fourth support units (21) to (24) configured to support rotatably a first to fourth tires (11) to (14), respectively. Shaft portions (31d) of the support units (21) to (24) are positioned by positioning caps (55) after a vehicle (3) is moved to a measuring position with a steering wheel (4) positioned neutral. With the tires (11) to (14) inclined at a toe angle with respect to a front-and-rear direction, when the vehicle (3) is caused to travel forwards, lateral stress is exerted on the support units (21) to (24), whereby the support units (21) to (24) turn about the corresponding shaft portions (31d). An angle sensor (40) detects turning angles of the support units (21) to (24). A control device (27) calculates a spoke angle deviation amount based on the detected turning angles.

Abstract: A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

Abstract: A film deposition method is provided for filling a recessed pattern formed in a surface of a substrate with a film. In the method, an adsorption blocking group is formed by adsorbing chlorine gas activated by plasma on a top surface of the substrate and an upper portion of the recessed pattern. A source gas that contains one of silicon and a metal, and chlorine, is adsorbed on a lower portion of the recessed pattern where the adsorption blocking group is not formed, by supplying the source gas to the surface of the substrate including the recessed pattern. A molecular layer of a nitride film produced by a reaction of the source gas and a nitriding gas is deposited on the lower portion of the trench by supplying the nitriding gas to the surface of the substrate including the recessed pattern.

Abstract: A protective film forming method is provided. In the method, substantially an entire surface of a silicon-containing underfilm is terminated with fluorine by supplying a fluorine-containing gas to the silicon-containing underfilm formed on a substrate having a surface including a plurality of recesses and a flat surface provided between the adjacent recesses. A surface of the silicon-containing underfilm formed on the flat surface of the substrate is nitrided by supplying a nitriding gas converted to plasma to the silicon-containing underfilm terminated with fluorine such that a silicon adsorption site is formed on the surface of the silicon-containing underfilm formed on the flat surface of the substrate. A silicon-containing gas is adsorbed on the silicon adsorption site by supplying the silicon-containing gas to the silicon-containing underfilm.

Abstract: A method for depositing a silicon nitride film is provided. A nitrided adsorption site is formed in a recess formed in a surface of a substrate by supplying an ammonia-containing gas to the substrate for nitriding the surface of the substrate including the recess. A non-adsorption site is formed in a predetermined upper area of the recess by adsorbing a chlorine-containing gas on the nitride adsorption site in the predetermined upper area by physical adsorption. The predetermined upper area ranges from an upper end of the recess to a predetermined depth of the recess. A silicon-containing gas is adsorbed on the nitride adsorption site other than the predetermined upper area so as to deposit a silicon nitride film by a chemical reaction between the adsorbed ammonia-containing gas and the adsorbed silicon-containing gas. The nitride adsorption site includes a bottom surface of the recess.

Abstract: A film-forming apparatus includes: a rotary table installed inside a vacuum vessel, and including a substrate mounting region, on which the substrate is mounted, formed at one surface side of the rotary table; a heating part for heating the substrate mounted on the rotary table; a first process region in which the source gas is supplied toward the substrate mounting region to perform a first process; a second process region defined apart from the first process region in a circumferential direction of the rotary table via a separation portion, and in which the reactant gas is supplied to perform a second process; and a main nozzle, a central-side auxiliary nozzle and a peripheral-side auxiliary nozzle installed in the first process region to extend in a direction intersecting with a movement path of the rotary table and along a rotational direction of the rotary table.

Abstract: A method for depositing a silicon nitride film is provided. A nitrided adsorption site is formed in a recess formed in a surface of a substrate by supplying an ammonia-containing gas to the substrate for nitriding the surface of the substrate including the recess. A non-adsorption site is formed in a predetermined upper area of the recess by adsorbing a chlorine-containing gas on the nitride adsorption site in the predetermined upper area by physical adsorption. The predetermined upper area ranges from an upper end of the recess to a predetermined depth of the recess. A silicon-containing gas is adsorbed on the nitride adsorption site other than the predetermined upper area so as to deposit a silicon nitride film by a chemical reaction between the adsorbed ammonia-containing gas and the adsorbed silicon-containing gas. The nitride adsorption site includes a bottom surface of the recess.

Abstract: A method for depositing a silicon-containing film is performed by causing a silicon-containing gas to adsorb on a first surface of a depression formed in a second surface of a substrate by supplying the silicon-containing gas to the substrate. A silicon component contained in the silicon-containing gas adsorbed on the first surface of the depression is partially etched by supplying an etching gas to the substrate. A silicon-containing film is deposited in the depression by supplying a reaction gas reactable with the silicon component to the substrate so as to produce a reaction product by causing the reaction gas to react with the silicon component left in the depression without being etched.

Abstract: A method of depositing a thin film on a substrate inside a vacuum chamber includes a first process that deposits a first film on the substrate, the first process including a process of supplying an active species that is obtained by changing a gas to plasma and is related to a quality of the thin film to the substrate; and a second process that deposits a second film that is the same type as that of the first film on the first film, the second process including a process of supplying the active species to the substrate so that a supply quantity of the active species per a unit film thickness is greater than a first supply quantity of the active species per the unit film thickness in the first process by adjusting a controlled parameter.

Abstract: A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.