Abstract: The present disclosure is to provide a wafer carrier substrate for carrying a wafer on which a plurality of chips is formed, elements to be measured being built in the plurality of chips. The wafer carrier substrate includes: a vacuuming hole for vacuuming of the wafer placed on the wafer carrier substrate; a wafer alignment guide for determining a predetermined position of the wafer placed on the wafer carrier substrate; and a mark for determining a probe contact position. It is possible to recognize a specific shot, without any additional processing of the semiconductor wafer.

Abstract: A light-receiving device includes: a plurality of light-receiving elements arranged in a row on a main surface of a substrate and a first reflection surface and a second reflection surface formed on the substrate to extend in the arrangement direction with the row of the plurality of light-receiving elements interposed therebetween. Each of the first reflection surface and the second reflection surface includes an inclined surface forming one flat surface formed from a main surface of the substrate on which each light-receiving element is formed to a back surface side of the substrate.

Abstract: A structure for blocking light incidence to a peripheral part of an element is applied to a rear surface portion, and when optically coupled to a light receiving element, the light is made incident to a center part of the element without fail. An embodiment relates to a semiconductor light receiving element, including a semiconductor light-absorbing layer on a front surface of a semiconductor substrate, for receiving signal light from a rear surface of the semiconductor substrate, and a transmittance of an inner region of a similar shape having a same center as an operating region defined in the semiconductor light-absorbing layer on the rear surface of the semiconductor substrate is higher than that of an outside of the shape.

Abstract: A light receiving device includes a semiconductor optical amplifier formed on a principal surface of a first substrate. The semiconductor optical amplifier has a first reflection portion that is formed by an end face at one end thereof, the end face being formed to be oblique to the principal surface of the first substrate. The semiconductor optical amplifier also has a second reflection portion that is formed by an end face at the other end thereof, the end face being formed to be oblique to the principal surface of the first substrate. The light receiving device further includes a second substrate having a back surface bonded to a back surface of the first substrate, and a photodiode formed on a principal surface of the second substrate.

Abstract: A substrate, a first n-type contact layer, a buffer layer, a multiplication layer, an electric field control layer, an absorption layer, and a p-type contact layer are provided. An electrically conductive layer is formed in a central portion of the buffer layer. The substrate is made of a semiconductor having thermal conductivity higher than that of InP, such as SiC, and the first n-type contact layer is made of the same semiconductor as that of the substrate but having n-type conductivity. An n electrode is formed over the first n-type contact layer via a second n-type contact layer.

Abstract: This semiconductor wafer has formed therein a plurality of chips, each of which has incorporated therein a semiconductor element to be tested. The semiconductor wafer is characterized by comprising: first pads which are formed on the chips, and to which a plurality of probe needles are connected, the probe needles being connected to the semiconductor elements and used for testing the semiconductor elements; and a second pad that is used for performing a contact check on the probe needles, the second pad having a conductive section greater in length than the distance between the centers of the first pads.

Abstract: A light-receiving device includes a light-receiving element formed on a main surface of a substrate, a light incidence surface formed on a side portion of the substrate at an acute angle or an obtuse angle with respect to the plane of the substrate and having an inclined surface forming one plane, and a lens for focusing light incident on the light-receiving element. The lens is disposed at a position where the light incident from the light incidence surface is reflected on a side of a back surface of the substrate.

Abstract: In an optical receiver circuit which suppresses an unnecessary increase in impedance and occurrences of resonance and radiation noise and which produces preferable high-frequency transmission characteristics, a PD submount mounted with a PD chip and a chip capacitor and a TIA carrier mounted with a TIA chip are electrically connected to each other by a bonding wire. The chip includes an anode electrode pad and a cathode electrode pad, anode electrode-side ground pads are formed at positions that sandwich the pad, and cathode electrode-side ground pads are formed at positions that sandwich the pad. A wire electrically connects the pad and a signal pad for input of the chip to each other, a wire electrically connects the pad and the capacitor to each other, and a wire electrically connects the pads and the pads to each other.

Abstract: A light receiving element enables light incidence from the upper surface of a light receiving element while realizing a structure in which the optical path length is extended, and as a result, facilitates optical mounting. A light receiving element in which a first semiconductor layer, a light absorbing layer composed of a semiconductor, a second semiconductor layer, a first electrode formed in contact with the first semiconductor layer, and a second electrode formed in contact with the second semiconductor layer and including a first reflective layer composed of a metal are formed on an upper surface of a substrate, wherein incident light is incident from the upper surface of the substrate, reflected by the bottom surface of the substrate, and then incident on the light absorbing layer obliquely to the vertical direction.

Abstract: A first n-type contact layer, a second n-type contact layer, a multiplication layer, an electric field control layer, a light absorbing layer, and a p-type contact layer are layered in this order on a substrate. The second n-type contact layer is formed between the first n-type contact layer and the light absorbing layer, is made to have an area smaller than that of the light absorbing layer in a plan view, and is disposed inside the light absorbing layer in a plan view.

Abstract: There is provided an element structure of an avalanche photodiode that can operate in a high gain state while having high reliability and low noise property. There is produced an avalanche photodiode including at least a multiplication layer and a light absorbing layer between first and second semiconductor contact layers, in which an area of the first semiconductor contact layer is at least smaller than an area of the multiplication layer, the avalanche photodiode having an electric field relaxation layer configured to be depleted at an operating voltage between the first semiconductor contact layer and the multiplication layer.

Abstract: A light-receiving device includes: a plurality of light-receiving elements arranged in a row on a main surface of a substrate and a first reflection surface and a second reflection surface formed on the substrate to extend in the arrangement direction with the row of the plurality of light-receiving elements interposed therebetween. Each of the first reflection surface and the second reflection surface includes an inclined surface forming one flat surface formed from a main surface of the substrate on which each light-receiving element is formed to a back surface side of the substrate.

Abstract: Provided is a semiconductor light receiving element which can achieve a high-speed operation without sacrificing light receiving sensitivity while increasing the margin of a manufacturing process. The semiconductor light receiving element according to the present invention is characterized by comprising: a semiconductor layer doped with a first impurity; a semiconductor light absorption layer in which a band gap energy is adjusted to absorb incident light on the semiconductor layer doped with the first impurity; a semiconductor layer on the semiconductor light absorption layer and doped with a second impurity; and a metal electrode contacting side surfaces of the semiconductor layer doped with the second impurity, wherein side surfaces of the metal electrode are surfaces parallel to a growth direction of the semiconductor layer doped with the second impurity.

Abstract: A substrate, a first n-type contact layer, a buffer layer, a multiplication layer, an electric field control layer, an absorption layer, and a p-type contact layer are provided. An electrically conductive layer is formed in a central portion of the buffer layer. The substrate is made of a semiconductor having thermal conductivity higher than that of InP, such as SiC, and the first n-type contact layer is made of the same semiconductor as that of the substrate but having n-type conductivity. An n electrode is formed over the first n-type contact layer via a second n-type contact layer.

Abstract: An n-type semiconductor layer (102), a multiplication layer (103), an electric field control layer (104), a light absorption layer (105), and a p-type semiconductor layer (106) are formed on a growth substrate (101), and the p-type semiconductor layer (106) is adhered on a transfer substrate (107). After that, the growth substrate (101) is removed, and the n-type semiconductor layer (102) is processed to have an area smaller than that of the multiplication layer (103).

Abstract: A light receiving device includes a first semiconductor layer made of a p-type semiconductor formed on a substrate, and a second semiconductor layer made of an n-type semiconductor formed on the substrate. The light receiving device further includes a carrier transit layer made of an undoped semiconductor formed between the first semiconductor layer and the second semiconductor layer, and an n-type light absorbing layer made of an n-type semiconductor formed between the second semiconductor layer and the carrier transit layer. The n-type light absorbing layer has a smaller bandgap energy than other layers.

Abstract: A light receiving device includes a semiconductor optical amplifier formed on a principal surface of a first substrate. The semiconductor optical amplifier has a first reflection portion that is formed by an end face at one end thereof, the end face being formed to be oblique to the principal surface of the first substrate. The semiconductor optical amplifier also has a second reflection portion that is formed by an end face at the other end thereof, the end face being formed to be oblique to the principal surface of the first substrate. The light receiving device further includes a second substrate having a back surface bonded to a back surface of the first substrate, and a photodiode formed on a principal surface of the second substrate.

Abstract: A structure includes an insulating layer on a semiconductor substrate, and a first through-hole and a second through-hole formed in the insulating layer. The second through-hole is formed in the insulating layer at a set distance from the first through-hole. The structure also includes a first electrode portion and a second electrode portion. The first electrode portion is formed by filling the first through-hole. The first electrode portion includes a probing pad on the insulating layer. The probing pad is wider than an opening area of the first through-hole. The second electrode portion is formed by filling the second through-hole. The second electrode portion includes a probing pad on the insulating layer. The probing pad is wider than an opening area of the second through-hole.

Abstract: An n-type semiconductor layer (102), a multiplication layer (103), an electric field control layer (104), a light absorption layer (105), and a p-type semiconductor layer (106) are formed on a growth substrate (101), and the p-type semiconductor layer (106) is adhered on a transfer substrate (107). After that, the growth substrate (101) is removed, and the n-type semiconductor layer (102) is processed to have an area smaller than that of the multiplication layer (103).

Abstract: An optical waveguide integrated light receiving element includes an optical waveguide (105) arranged on a side of a second contact layer (102) opposite to a side where a light absorption layer (103) is arranged, having a waveguide direction parallel to a plane of the light absorption layer (103), and optically coupled with the second contact layer (102). The second contact layer (102) has, in a planar view, a size of an area smaller than that of the light absorption layer (103) and arranged inside the light absorption layer (103).